Datasheets
DN2530N8-G by:

200mA, 300V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-243AA

Part Details for DN2530N8-G by Microchip Technology Inc

Overview of DN2530N8-G by Microchip Technology Inc

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Applications Consumer Electronics Industrial Automation Audio and Video Systems Energy and Power Systems Electronic Manufacturing Renewable Energy

Price & Stock for DN2530N8-G

Part # Distributor Description Stock Price Buy
DISTI # 67X5068
Newark Mosfet, N Channel, 300V, 0.2A, Sot-89-3, Channel Type:N Channel, Drain Source Voltage Vds:300V, Continuous Drain Current Id:200Ma, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:0V, Gate Source Threshold Voltage Max:- Rohs Compliant: Yes |Microchip DN2530N8-G RoHS: Compliant Min Qty: 2000 Package Multiple: 1 Date Code: 0 Container: Reel 0
  • 1 $0.6760
$0.6760 Buy Now
DISTI # 85X3185
Newark Mosfet, N Channel, 300V, 0.2A, To-243Aa-3, Channel Type:N Channel, Drain Source Voltage Vds:300V, Continuous Drain Current Id:200Ma, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:0V, Gate Source Threshold Voltage Max:- Rohs Compliant: Yes |Microchip DN2530N8-G RoHS: Compliant Min Qty: 2000 Package Multiple: 1 Date Code: 0 Container: Cut Tape 0
  • 50 $0.7050
$0.7050 Buy Now
DISTI # DN2530N8-G
Avnet Americas Trans MOSFET N-CH 300V 0.2A 4-Pin(3+Tab) SOT-89 - Tape and Reel (Alt: DN2530N8-G) RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 Lead time: 7 Weeks, 0 Days Container: Reel 0
  • 1 $0.7615
  • 25 $0.7529
  • 100 $0.7083
$0.7083 / $0.7615 Buy Now
DISTI # DN2530N8-G
Avnet Americas Trans MOSFET N-CH 300V 0.2A 4-Pin(3+Tab) SOT-89 - Tape and Reel (Alt: DN2530N8-G) RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 Lead time: 7 Weeks, 0 Days Container: Reel 0
  • 1 $0.8800
  • 25 $0.7300
  • 100 $0.6500
$0.6500 / $0.8800 Buy Now
DISTI # DN2530N8-G
Microchip Technology Inc MOSFET, DEPLETION-MODE, 300V, 12 Ohm, SOT-89, Projected EOL: 2034-02-09 RoHS: Compliant Lead time: 7 Weeks, 0 Days Container: Reel 30000

COO: China, Taiwan
  • 1 $0.8800
  • 25 $0.7300
  • 100 $0.6500
  • 1,000 $0.6400
  • 5,000 $0.6300
$0.6300 / $0.8800 Buy Now
DISTI # 70431582
RS 3 SOT-89 T/RMOSFET, DEPLETION-MODE, 300V, 12 Ohm | Microchip Technology Inc. DN2530N8-G RoHS: Not Compliant Min Qty: 2000 Package Multiple: 1 Lead time: 42 Weeks, 0 Days Container: Bulk 0
  • 2,000 $0.8800
  • 20,000 $0.8400
  • 100,000 $0.7900
  • 200,000 $0.7500
$0.7500 / $0.8800 RFQ
DISTI # DN2530N8-G
TME Transistor: N-MOSFET, unipolar, 300V, 0.2A, 740mW, SOT89-3 Min Qty: 1 243
  • 1 $0.9200
  • 5 $0.8900
  • 25 $0.7300
  • 100 $0.7000
  • 500 $0.6800
$0.6800 / $0.9200 Buy Now
Ameya Holding Limited Transistor: N-MOSFET, unipolar, 300V, 0.2A, 740mW, SOT89-3 4800
RFQ
NAC MOSFET, DEPLETION-MODE, 300V, 12 Ohm - Package: 3 SOT-89 T/R RoHS: Compliant Min Qty: 1 Package Multiple: 2000 24000
  • 1 $0.8600
  • 100 $0.7800
  • 500 $0.7200
  • 1,000 $0.7000
$0.7000 / $0.8600 Buy Now
DISTI # DN2530N8-G
Avnet Silica Trans MOSFET N-CH 300V 0.2A 4-Pin(3+Tab) SOT-89 (Alt: DN2530N8-G) RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 Lead time: 9 Weeks, 0 Days Silica - 0
Buy Now
DISTI # DN2530N8-G
EBV Elektronik Trans MOSFET N-CH 300V 0.2A 4-Pin(3+Tab) SOT-89 (Alt: DN2530N8-G) RoHS: Compliant Min Qty: 2000 Package Multiple: 2000 Lead time: 8 Weeks, 0 Days EBV - 0
Buy Now
Win Source Electronics MOSFET N-CH 300V 0.2A SOT89-3 11753
  • 55 $0.9300
  • 135 $0.7631
  • 205 $0.7393
  • 280 $0.7154
  • 365 $0.6916
  • 485 $0.6200
$0.6200 / $0.9300 Buy Now

Part Details for DN2530N8-G

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DN2530N8-G Part Data Attributes

DN2530N8-G Microchip Technology Inc
Buy Now Datasheet
Compare Parts:
DN2530N8-G Microchip Technology Inc 200mA, 300V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-243AA
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer MICROCHIP TECHNOLOGY INC
Package Description GREEN PACKAGE-3
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Samacsys Manufacturer Microchip
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 300 V
Drain Current-Max (ID) 0.2 A
Drain-source On Resistance-Max 12 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 5 pF
JEDEC-95 Code TO-243AA
JESD-30 Code R-PSSO-F3
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Mode DEPLETION MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 1.6 W
Pulsed Drain Current-Max (IDM) 0.5 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Matte Tin (Sn) - annealed
Terminal Form FLAT
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 40
Transistor Application SWITCHING
Transistor Element Material SILICON
Turn-off Time-Max (toff) 35 ns
Turn-on Time-Max (ton) 30 ns

Alternate Parts for DN2530N8-G

This table gives cross-reference parts and alternative options found for DN2530N8-G. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of DN2530N8-G, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
DN2530N8-G Supertex Inc Check for Price Small Signal Field-Effect Transistor, 0.2A I(D), 300V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-243AA, GREEN PACKAGE-3 DN2530N8-G vs DN2530N8-G
DN2530N8 Supertex Inc Check for Price Small Signal Field-Effect Transistor, 0.2A I(D), 300V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-243AA, TO-243AA, 3 PIN DN2530N8-G vs DN2530N8

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