Datasheets
DU28120V by:

RF Power Field-Effect Transistor, 2-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET,

Part Details for DU28120V by MACOM

Overview of DU28120V by MACOM

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Price & Stock for DU28120V

Part # Distributor Description Stock Price Buy
DISTI # 1465-DU28120V-ND
DigiKey RF MOSFET 28V 8L-FLG Min Qty: 20 Lead time: 24 Weeks Container: Bulk Temporarily Out of Stock
  • 20 $164.4335
$164.4335 Buy Now
DISTI # 937-DU28120V
Mouser Electronics RF MOSFET Transistors Transistor,Mosfet,120W,2-175MHz,28V RoHS: Compliant 0
  • 20 $158.5800
$158.5800 Order Now
DISTI # DU28120V
Richardson RFPD RF POWER TRANSISTOR RoHS: Compliant Min Qty: 1 1000
  • 1 $165.9200
$165.9200 Buy Now

Part Details for DU28120V

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DU28120V Part Data Attributes:

DU28120V MACOM
Buy Now Datasheet
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DU28120V MACOM RF Power Field-Effect Transistor, 2-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET,
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer M/A-COM TECHNOLOGY SOLUTIONS INC
Package Description FLANGE MOUNT, R-CDFM-F8
Reach Compliance Code compliant
ECCN Code EAR99
Samacsys Manufacturer MACOM
Configuration COMMON SOURCE, 2 ELEMENTS
DS Breakdown Voltage-Min 65 V
Drain Current-Max (ID) 12 A
FET Technology METAL-OXIDE SEMICONDUCTOR
Highest Frequency Band VERY HIGH FREQUENCY BAND
JESD-30 Code R-CDFM-F8
Number of Elements 2
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 200 °C
Package Body Material CERAMIC, METAL-SEALED COFIRED
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 250 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Form FLAT
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application AMPLIFIER
Transistor Element Material SILICON

Alternate Parts for DU28120V

This table gives cross-reference parts and alternative options found for DU28120V. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of DU28120V, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
DU28120V 2 CHANNEL, VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET TE Connectivity DU28120V vs DU28120V
Part Number Description Manufacturer Compare
DU28120T VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET TE Connectivity DU28120V vs DU28120T
DU28120U RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, MACOM DU28120V vs DU28120U
DU28120V 2 CHANNEL, VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET TE Connectivity DU28120V vs DU28120V

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