Datasheets
DU2880U by:

RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET,

Part Details for DU2880U by MACOM

Overview of DU2880U by MACOM

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Applications Industrial Automation Renewable Energy Robotics and Drones

Price & Stock for DU2880U

Part # Distributor Description Stock Price Buy
DISTI # 1465-DU2880U-ND
DigiKey RF MOSFET 28V Min Qty: 25 Lead time: 24 Weeks Container: Bulk Temporarily Out of Stock
  • 25 $110.0264
$110.0264 Buy Now

Part Details for DU2880U

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DU2880U Part Data Attributes

DU2880U MACOM
Buy Now Datasheet
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DU2880U MACOM RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET,
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer M/A-COM TECHNOLOGY SOLUTIONS INC
Package Description FLANGE MOUNT, O-CRFM-F4
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8541.29.00.75
Samacsys Manufacturer MACOM
Configuration SINGLE
DS Breakdown Voltage-Min 65 V
Drain Current-Max (ID) 16 A
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 32 pF
Highest Frequency Band VERY HIGH FREQUENCY BAND
JESD-30 Code O-CRFM-F4
Number of Elements 1
Number of Terminals 4
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 200 °C
Operating Temperature-Min -65 °C
Package Body Material CERAMIC, METAL-SEALED COFIRED
Package Shape ROUND
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 206 W
Power Dissipation-Max (Abs) 207 W
Power Gain-Min (Gp) 13 dB
Qualification Status Not Qualified
Surface Mount NO
Terminal Form FLAT
Terminal Position RADIAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application AMPLIFIER
Transistor Element Material SILICON

Alternate Parts for DU2880U

This table gives cross-reference parts and alternative options found for DU2880U. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of DU2880U, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
DU2880U VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET TE Connectivity DU2880U vs DU2880U
Part Number Description Manufacturer Compare
DU2860T VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET TE Connectivity DU2880U vs DU2860T
MRF140 VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET Motorola Mobility LLC DU2880U vs MRF140
BLF246,112 BLF246 NXP Semiconductors DU2880U vs BLF246,112
DU2880U VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET TE Connectivity DU2880U vs DU2880U
MRF173 VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, CASE 211-11, 4 PIN TE Connectivity DU2880U vs MRF173
BLF147 TRANSISTOR VHF BAND, Si, N-CHANNEL, RF POWER, MOSFET, CERAMIC PACKAGE-4, FET RF Power NXP Semiconductors DU2880U vs BLF147
HFT150-28 RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, 0.500 INCH, FM-4 Advanced Semiconductor Inc DU2880U vs HFT150-28
DU2860T RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, MACOM DU2880U vs DU2860T
MRF173 RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, 0.380 INCH, FM-4 Advanced Semiconductor Inc DU2880U vs MRF173
VFT150-28 RF Power Field-Effect Transistor, 1-Element, Very High Frequency Band, Silicon, N-Channel, Metal-oxide Semiconductor FET, Advanced Semiconductor Inc DU2880U vs VFT150-28

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