EGNC210MK
Description: RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Gallium Nitride, N-Channel, High Electron Mobility FET, HERMETIC SEALED, METAL-CERAMIC PACKAGE-2

Overview of EGNC210MK by SUMITOMO ELECTRIC Industries Ltd

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  • Distributor Offerings: ( 0 listings )
  • Number of FFF Equivalents: ( 0 replacements )
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  • Part Data Attributes ( Available )
  • Reference Designs: ( Not Available )

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Part Data Attributes for EGNC210MK by SUMITOMO ELECTRIC Industries Ltd

EGNC210MK
SUMITOMO ELECTRIC Industries Ltd
-
-
Part Life Cycle Code
Active
Ihs Manufacturer
SUMITOMO ELECTRIC INDUSTRIES LTD
Package Description
FLANGE MOUNT, R-CDFM-F2
Pin Count
2
Reach Compliance Code
unknown
ECCN Code
EAR99
Additional Feature
HIGH RELIABILITY
Case Connection
SOURCE
Configuration
SINGLE
DS Breakdown Voltage-Min
160 V
FET Technology
HIGH ELECTRON MOBILITY
Highest Frequency Band
ULTRA HIGH FREQUENCY BAND
JESD-30 Code
R-CDFM-F2
Number of Elements
1
Number of Terminals
2
Operating Mode
DEPLETION MODE
Package Body Material
CERAMIC, METAL-SEALED COFIRED
Package Shape
RECTANGULAR
Package Style
FLANGE MOUNT
Polarity/Channel Type
N-CHANNEL
Qualification Status
Not Qualified
Surface Mount
YES
Terminal Form
FLAT
Terminal Position
DUAL
Transistor Application
AMPLIFIER
Transistor Element Material
GALLIUM NITRIDE
Want to compare parts?
  1. EGNC210MK
    SUMITOMO ELECTRIC Industries Ltd
    RF Power Field-Effect Transistor, 1-Element, Ultra High Frequency Band, Gallium Nitride, N-Channel, High Electron Mobility FET, HERMETIC SEALED, METAL-CERAMIC PACKAGE-2
    VS

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