Datasheets
EMX5T2R by:

RF Small Signal Bipolar Transistor, 0.05A I(C), 2-Element, Silicon, NPN, EMT6, 6 PIN

Part Details for EMX5T2R by ROHM Semiconductor

Overview of EMX5T2R by ROHM Semiconductor

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Price & Stock for EMX5T2R

Part # Distributor Description Stock Price Buy
DISTI # EMX5T2RCT-ND
DigiKey TRANS 2NPN 11V 0.05A 6EMT Min Qty: 1 Lead time: 13 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) Limited Supply - Call
  • 1 $0.6300
  • 8,000 $0.2008
  • 16,000 $0.1865
  • 24,000 $0.1821
  • 56,000 $0.1775
$0.1775 / $0.6300 Buy Now
DISTI # 755-EMX5T2R
Mouser Electronics Bipolar Transistors - BJT DUAL NPN 11V 50MA RoHS: Compliant 0
Order Now
Future Electronics   RoHS: Compliant pbFree: Yes Min Qty: 8000 Package Multiple: 8000 Container: Reel 0
Reel
  • 8,000 $0.0938
$0.0938 Buy Now
Bristol Electronics   4210
RFQ
Quest Components   3368
  • 1 $0.7500
  • 149 $0.2250
  • 1,779 $0.1500
$0.1500 / $0.7500 Buy Now

Part Details for EMX5T2R

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EMX5T2R Part Data Attributes:

EMX5T2R ROHM Semiconductor
Buy Now Datasheet
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EMX5T2R ROHM Semiconductor RF Small Signal Bipolar Transistor, 0.05A I(C), 2-Element, Silicon, NPN, EMT6, 6 PIN
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Not Recommended
Ihs Manufacturer ROHM CO LTD
Part Package Code SC-107
Package Description SMALL OUTLINE, R-PDSO-F6
Pin Count 6
Reach Compliance Code compliant
ECCN Code EAR99
Collector Current-Max (IC) 0.05 A
Collector-Base Capacitance-Max 1.55 pF
Collector-Emitter Voltage-Max 11 V
Configuration SEPARATE, 2 ELEMENTS
DC Current Gain-Min (hFE) 27
JESD-30 Code R-PDSO-F6
JESD-609 Code e2
Moisture Sensitivity Level 1
Number of Elements 2
Number of Terminals 6
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type NPN
Power Dissipation-Max (Abs) 0.15 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Tin/Copper (Sn/Cu)
Terminal Form FLAT
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application AMPLIFIER
Transistor Element Material SILICON
Transition Frequency-Nom (fT) 3200 MHz

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