Datasheets
FC8V22040L by: Panasonic Electronic Components

Small Signal Field-Effect Transistor, 8A I(D), 24V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, WMINI8-F1, SC-115, 8 PIN

Part Details for FC8V22040L by Panasonic Electronic Components

Overview of FC8V22040L by Panasonic Electronic Components

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Price & Stock for FC8V22040L

Part # Distributor Description Stock Price Buy
DISTI # 56W0706
Newark Sc, Nch Power Mos Fet |Panasonic FC8V22040L RoHS: Not Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel 0
Buy Now
Ozdisan Elektronik MOSFET 2N-CH 24V 8A WMINI8-F1 0
  • 1 $0.8947
  • 3,000 $0.7780
$0.7780 / $0.8947 RFQ
Win Source Electronics Trans MOSFET N-CH Si 24V 8A 8-Pin WMini8-F1 T/R / MOSFET 2N-CH 24V 8A WMINI8-F1 9670
  • 35 $1.6010
  • 80 $1.3140
  • 120 $1.2730
  • 165 $1.2320
  • 210 $1.1910
  • 285 $1.0680
$1.0680 / $1.6010 Buy Now

Part Details for FC8V22040L

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FC8V22040L Part Data Attributes

FC8V22040L Panasonic Electronic Components
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FC8V22040L Panasonic Electronic Components Small Signal Field-Effect Transistor, 8A I(D), 24V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, WMINI8-F1, SC-115, 8 PIN
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer PANASONIC CORP
Package Description SC-115, 8 PIN
Reach Compliance Code not_compliant
ECCN Code EAR99
Samacsys Manufacturer Panasonic
Configuration COMMON DRAIN, 2 ELEMENTS WITH BUILT-IN DIODE AND RESISTOR
DS Breakdown Voltage-Min 24 V
Drain Current-Max (ID) 8 A
Drain-source On Resistance-Max 0.02 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-F8
Moisture Sensitivity Level 1
Number of Elements 2
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 1.2 W
Surface Mount YES
Terminal Form FLAT
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 10
Transistor Application SWITCHING
Transistor Element Material SILICON

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