Datasheets
FCPF11N60 by:

Power MOSFET, N-Channel, SUPERFET®, Easy Drive, 600 V, 11 A, 380 mΩ, TO-220F, TO-220-3 FullPak, 1000-TUBE

Part Details for FCPF11N60 by onsemi

Results Overview of FCPF11N60 by onsemi

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Applications Consumer Electronics Energy and Power Systems Renewable Energy Medical Imaging Robotics and Drones

FCPF11N60 Information

FCPF11N60 by onsemi is a Power Field-Effect Transistor.
Power Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for FCPF11N60

Part # Distributor Description Stock Price Buy
DISTI # 96K9844
Newark Mosfet Transistor, N Channel, 11 A, 600 V, 0.32 Ohm, 10 V, 5 V Rohs Compliant: Yes |Onsemi FCPF11N60 RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Bulk 766
  • 1 $3.6700
  • 10 $3.6600
  • 25 $3.1900
  • 50 $2.7000
  • 100 $2.6000
  • 250 $2.5300
  • 500 $2.4500
$2.4500 / $3.6700 Buy Now
DISTI # FCPF11N60
Avnet Americas Trans MOSFET N-CH 650V 11A 3-Pin TO-220F Tube - Rail/Tube (Alt: FCPF11N60) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 11 Weeks, 0 Days Container: Tube 0
  • 1,000 $1.4508
  • 2,000 $1.4334
  • 4,000 $1.4163
  • 6,000 $1.4096
  • 8,000 $1.3997
$1.3997 / $1.4508 Buy Now
DISTI # FCPF11N60
TME Transistor: N-MOSFET, unipolar, 650V, 11A, 36W, TO220FP Min Qty: 1 139
  • 1 $2.4100
  • 10 $2.1500
  • 50 $2.0100
  • 100 $1.7200
  • 250 $1.6100
  • 500 $1.5500
  • 1,000 $1.5000
$1.5000 / $2.4100 Buy Now
DISTI # FCPF11N60
Richardson RFPD POWER MOSFET TRANSISTOR RoHS: Compliant Min Qty: 1000 0
  • 1,000 $1.4900
$1.4900 Buy Now
DISTI # FCPF11N60
Avnet Asia Trans MOSFET N-CH 650V 11A 3-Pin TO-220F Tube (Alt: FCPF11N60) RoHS: Compliant Min Qty: 1000 Package Multiple: 1000 Lead time: 11 Weeks, 0 Days 0
  • 1,000 $1.2893
  • 2,000 $1.2726
  • 3,000 $1.2563
  • 5,000 $1.2404
  • 10,000 $1.2098
  • 25,000 $1.1806
  • 50,000 $1.1528
$1.1528 / $1.2893 Buy Now
DISTI # FCPF11N60
Avnet Silica Trans MOSFET NCH 650V 11A 3Pin TO220F Tube (Alt: FCPF11N60) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 12 Weeks, 0 Days Silica - 3150
Buy Now
DISTI # FCPF11N60
EBV Elektronik Trans MOSFET NCH 650V 11A 3Pin TO220F Tube (Alt: FCPF11N60) RoHS: Compliant Min Qty: 50 Package Multiple: 50 Lead time: 13 Weeks, 0 Days EBV - 50
Buy Now
New Advantage Corporation   RoHS: Compliant Min Qty: 1 Package Multiple: 50 50
  • 50 $5.3600
$5.3600 Buy Now
Win Source Electronics SuperFET | MOSFET N-CH 600V 11A TO220F 3000
  • 18 $2.9341
  • 37 $2.7448
  • 57 $2.6501
  • 82 $2.4608
  • 106 $2.3662
  • 133 $2.2715
$2.2715 / $2.9341 Buy Now

Part Details for FCPF11N60

FCPF11N60 CAD Models

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FCPF11N60 Part Data Attributes

FCPF11N60 onsemi
Buy Now Datasheet
Compare Parts:
FCPF11N60 onsemi Power MOSFET, N-Channel, SUPERFET®, Easy Drive, 600 V, 11 A, 380 mΩ, TO-220F, TO-220-3 FullPak, 1000-TUBE
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer ONSEMI
Part Package Code TO-220-3 FullPak
Package Description TO-220F, 3 PIN
Manufacturer Package Code 221AT
Reach Compliance Code not_compliant
ECCN Code EAR99
Factory Lead Time 11 Weeks
Samacsys Manufacturer onsemi
Avalanche Energy Rating (Eas) 340 mJ
Case Connection ISOLATED
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V
Drain Current-Max (ID) 11 A
Drain-source On Resistance-Max 0.38 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-220AB
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Pulsed Drain Current-Max (IDM) 33 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish Matte Tin (Sn) - annealed
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for FCPF11N60

This table gives cross-reference parts and alternative options found for FCPF11N60. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FCPF11N60, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
FCPF11N60 Rochester Electronics LLC Check for Price 11A, 600V, 0.38ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, ROHS COMPLIANT, TO-220F, 3 PIN FCPF11N60 vs FCPF11N60
Part Number Manufacturer Composite Price Description Compare
FCPF11N60 Fairchild Semiconductor Corporation Check for Price Power Field-Effect Transistor, 11A I(D), 600V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, ROHS COMPLIANT, TO-220F, 3 PIN FCPF11N60 vs FCPF11N60
STP11NM60FP STMicroelectronics Check for Price N-channel 600 V, 0.4 Ohm, 11 A, TO-220, TO-220FP MDmesh(TM) Power MOSFET FCPF11N60 vs STP11NM60FP

FCPF11N60 Related Parts

FCPF11N60 Frequently Asked Questions (FAQ)

  • The maximum junction temperature of the FCPF11N60 is 175°C, as specified in the datasheet. However, it's recommended to keep the junction temperature below 150°C for reliable operation and to prevent thermal runaway.

  • To ensure proper cooling, a heat sink with a thermal resistance of less than 1°C/W is recommended. Additionally, the heat sink should be mounted using a thermal interface material with a thermal conductivity of at least 1 W/m-K. Proper airflow and a clean, dust-free environment are also essential for effective cooling.

  • The recommended gate drive voltage for the FCPF11N60 is between 10V and 15V. A higher gate drive voltage can improve switching performance, but may also increase power consumption and EMI emissions.

  • Yes, the FCPF11N60 is suitable for high-frequency switching applications up to 100 kHz. However, the device's switching losses and thermal performance should be carefully evaluated to ensure reliable operation. A proper gate drive circuit and thermal management are crucial in such applications.

  • To protect the FCPF11N60 from overvoltage and overcurrent, a suitable overvoltage protection (OVP) circuit and overcurrent protection (OCP) circuit should be implemented. The OVP circuit should be designed to clamp the voltage to a safe level, while the OCP circuit should be designed to limit the current to a safe value.

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