Part Details for FDA20N50-F109 by onsemi
Overview of FDA20N50-F109 by onsemi
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
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Applications
Consumer Electronics
Energy and Power Systems
Transportation and Logistics
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Automotive
Price & Stock for FDA20N50-F109
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
FDA20N50-F109
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Avnet Americas | Trans MOSFET N-CH 500V 22A 3-Pin(3+Tab) TO-3P(N) Rail - Rail/Tube (Alt: FDA20N50-F109) RoHS: Compliant Min Qty: 424 Package Multiple: 1 Lead time: 0 Weeks, 2 Days Container: Tube | 426 Partner Stock |
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$1.4632 / $1.7464 | Buy Now |
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Rochester Electronics | Power Field-Effect Transistor, 22A, 500V, 0.23ohm, N-Channel, MOSFET RoHS: Compliant Status: End of Life / Last Time Buy Min Qty: 1 | 20201 |
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$1.8200 / $2.1400 | Buy Now |
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DISTI #
FDA20N50-F109
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Avnet Americas | Trans MOSFET N-CH 500V 22A 3-Pin(3+Tab) TO-3P(N) Rail - Rail/Tube (Alt: FDA20N50-F109) RoHS: Compliant Min Qty: 424 Package Multiple: 1 Lead time: 0 Weeks, 2 Days Container: Tube | 426 Partner Stock |
|
$1.4632 / $1.7464 | Buy Now |
|
DISTI #
FDA20N50-F109
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Avnet Americas | Trans MOSFET N-CH 500V 22A 3-Pin(3+Tab) TO-3P(N) Rail - Rail/Tube (Alt: FDA20N50-F109) RoHS: Compliant Min Qty: 424 Package Multiple: 1 Lead time: 0 Weeks, 2 Days Container: Tube | 426 Partner Stock |
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$1.4632 / $1.7464 | Buy Now |
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Flip Electronics | Stock, ship today | 426 |
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$1.1800 | RFQ |
Part Details for FDA20N50-F109
FDA20N50-F109 CAD Models
FDA20N50-F109 Part Data Attributes
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FDA20N50-F109
onsemi
Buy Now
Datasheet
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Compare Parts:
FDA20N50-F109
onsemi
Power MOSFET, N-Channel, UniFETTM, 500 V, 22 A, 230 mΩ, TO-3P, TO-3PN 3L, 450-TUBE
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| Pbfree Code | Yes | |
| Part Life Cycle Code | End Of Life | |
| Ihs Manufacturer | ONSEMI | |
| Part Package Code | TO-3PN 3L | |
| Package Description | TO-3PN, 3 PIN | |
| Manufacturer Package Code | 340BZ | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | onsemi | |
| Additional Feature | FAST SWITCHING | |
| Avalanche Energy Rating (Eas) | 1110 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 500 V | |
| Drain Current-Max (ID) | 22 A | |
| Drain-source On Resistance-Max | 0.23 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PSFM-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 280 W | |
| Pulsed Drain Current-Max (IDM) | 88 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for FDA20N50-F109
This table gives cross-reference parts and alternative options found for FDA20N50-F109. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDA20N50-F109, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IRFP460BPBF | TRANSISTOR POWER, FET, FET General Purpose Power | Vishay Siliconix | FDA20N50-F109 vs IRFP460BPBF |
| FDP20N50F | Power MOSFET, N-Channel, UniFETTM, FRFET®, 500 V, 20 A, 260 mΩ, TO-220, 1000-TUBE | onsemi | FDA20N50-F109 vs FDP20N50F |
| IRFP460BPBF | Power Field-Effect Transistor, 20A I(D), 500V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, | Vishay Intertechnologies | FDA20N50-F109 vs IRFP460BPBF |
| IXTH21N50 | Power Field-Effect Transistor | New Jersey Semiconductor Products Inc | FDA20N50-F109 vs IXTH21N50 |
| STW20NM50 | 20A, 500V, 0.25ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247, TO-247, 3 PIN | STMicroelectronics | FDA20N50-F109 vs STW20NM50 |
| APT5024BFLLG | Power Field-Effect Transistor, 22A I(D), 500V, 0.24ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD | Microchip Technology Inc | FDA20N50-F109 vs APT5024BFLLG |
| RF4E20N50ST | Power Field-Effect Transistor, 20A I(D), 500V, 0.24ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-268AA | Fairchild Semiconductor Corporation | FDA20N50-F109 vs RF4E20N50ST |
| APT5024BLLG | Power Field-Effect Transistor, 22A I(D), 500V, 0.24ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, ROHS COMPLIANT, TO-247, 3 PIN | Microsemi Corporation | FDA20N50-F109 vs APT5024BLLG |
| IXTH21N50 | Power Field-Effect Transistor, 21A I(D), 500V, 0.25ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, TO-247AD, 3 PIN | IXYS Corporation | FDA20N50-F109 vs IXTH21N50 |
| APT5024BLLG | Power Field-Effect Transistor, 22A I(D), 500V, 0.24ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD | Microchip Technology Inc | FDA20N50-F109 vs APT5024BLLG |