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Part Details for FDB9503L-F085 by onsemi
Overview of FDB9503L-F085 by onsemi
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for FDB9503L-F085
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
488-FDB9503L-F085CT-ND
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DigiKey | MOSFET P-CH 40V 110A D2PAK Min Qty: 1 Lead time: 27 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
663 In Stock |
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$3.4557 / $5.0900 | Buy Now |
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DISTI #
3368727RL
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element14 Asia-Pacific | MOSFET, P-CH, 40V, 110A, 175DEG C, 333W RoHS: Compliant Min Qty: 100 Container: Reel | 0 |
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$3.5681 | Buy Now |
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DISTI #
3368727
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element14 Asia-Pacific | MOSFET, P-CH, 40V, 110A, 175DEG C, 333W RoHS: Compliant Min Qty: 1 Container: Cut Tape | 0 |
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$3.5681 / $5.1580 | Buy Now |
Part Details for FDB9503L-F085
FDB9503L-F085 CAD Models
FDB9503L-F085 Part Data Attributes
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FDB9503L-F085
onsemi
Buy Now
Datasheet
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Compare Parts:
FDB9503L-F085
onsemi
P-Channel PowerTrench® MOSFET, -40 V, -110 A, 2.6 mΩ, TO-263 2L (D2PAK), 800-REEL, Automotive Qualified
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| Pbfree Code | Yes | |
| Part Life Cycle Code | Lifetime Buy | |
| Ihs Manufacturer | ONSEMI | |
| Part Package Code | TO-263 2L (D2PAK) | |
| Manufacturer Package Code | 418AJ | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 37 Weeks | |
| Samacsys Manufacturer | onsemi | |
| Avalanche Energy Rating (Eas) | 984 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 40 V | |
| Drain Current-Max (ID) | 110 A | |
| Drain-source On Resistance-Max | 0.0026 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-263AB | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 175 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 245 | |
| Polarity/Channel Type | P-CHANNEL | |
| Reference Standard | AEC-Q101 | |
| Surface Mount | YES | |
| Terminal Finish | Matte Tin (Sn) - annealed | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for FDB9503L-F085
This table gives cross-reference parts and alternative options found for FDB9503L-F085. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDB9503L-F085, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| IPI120P04P4L03XK | Power Field-Effect Transistor, 120A I(D), 40V, 0.0052ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, 3 PIN | Infineon Technologies AG | FDB9503L-F085 vs IPI120P04P4L03XK |
| IPP120P04P4L-03 | Power Field-Effect Transistor, 120A I(D), 40V, 0.0052ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN | Infineon Technologies AG | FDB9503L-F085 vs IPP120P04P4L-03 |
| IPI120P04P4L03AKSA1 | Power Field-Effect Transistor, 120A I(D), 40V, 0.0052ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, 3 PIN | Infineon Technologies AG | FDB9503L-F085 vs IPI120P04P4L03AKSA1 |
| IPP120P04P4L03AKSA1 | Power Field-Effect Transistor, 120A I(D), 40V, 0.0052ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN | Infineon Technologies AG | FDB9503L-F085 vs IPP120P04P4L03AKSA1 |
| IPI120P04P4L-03 | Power Field-Effect Transistor, 120A I(D), 40V, 0.0052ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-262AA, GREEN, PLASTIC, TO-262, 3 PIN | Infineon Technologies AG | FDB9503L-F085 vs IPI120P04P4L-03 |