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P-Channel Power Trench® MOSFET, -80 V, -2.1 A, 183 mΩ, 3000-REEL
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
95W3153
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Newark | Mosfet Transistor, P Channel, -2.1 A, -80 V, 0.147 Ohm, -10 V, -1.6 V Rohs Compliant: Yes |Onsemi FDC3535 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
|
Buy Now | |
DISTI #
2322579
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element14 Asia-Pacific | MOSFET, P CH, -80V, -2.1A, SUPERSOT-6 RoHS: Compliant Min Qty: 1 Container: Each | 0 |
|
$0.2744 / $0.5096 | Buy Now |
DISTI #
2322579
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Farnell | MOSFET, P CH, -80V, -2.1A, SUPERSOT-6 RoHS: Compliant Min Qty: 1 Lead time: 51 Weeks, 1 Days Container: Each | 0 |
|
$0.5272 / $1.1248 | Buy Now |
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LCSC | 80V 2.1A 183m2.1A10V 1.6W 3V250uA 1PCSPChannel SSOT-6 MOSFETs ROHS | 10 |
|
$7.9803 / $10.7309 | Buy Now |
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FDC3535
onsemi
Buy Now
Datasheet
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FDC3535
onsemi
P-Channel Power Trench® MOSFET, -80 V, -2.1 A, 183 mΩ, 3000-REEL
|
Pbfree Code | Yes | |
Part Life Cycle Code | End Of Life | |
Ihs Manufacturer | ONSEMI | |
Package Description | SUPERSOT-6 | |
Manufacturer Package Code | 419BL | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | onsemi | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 80 V | |
Drain Current-Max (ID) | 2.1 A | |
Drain-source On Resistance-Max | 0.183 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 40 pF | |
JEDEC-95 Code | MO-193AA | |
JESD-30 Code | R-PDSO-G6 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 6 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | P-CHANNEL | |
Power Dissipation-Max (Abs) | 1.6 W | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) - annealed | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |