Part Details for FDC636P by Fairchild Semiconductor Corporation
Overview of FDC636P by Fairchild Semiconductor Corporation
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for FDC636P
FDC636P CAD Models
FDC636P Part Data Attributes:
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FDC636P
Fairchild Semiconductor Corporation
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Datasheet
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FDC636P
Fairchild Semiconductor Corporation
Small Signal Field-Effect Transistor, 2.8A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-6
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
Part Package Code | SOT | |
Package Description | SUPERSOT-6 | |
Pin Count | 6 | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 20 V | |
Drain Current-Max (ID) | 2.8 A | |
Drain-source On Resistance-Max | 0.13 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 45 pF | |
JESD-30 Code | R-PDSO-G6 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 6 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | P-CHANNEL | |
Power Dissipation-Max (Abs) | 1.6 W | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for FDC636P
This table gives cross-reference parts and alternative options found for FDC636P. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDC636P, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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SDF504 | Small Signal Field-Effect Transistor, 2-Element, N-Channel, Silicon, Junction FET, TO-71, | Solitron Devices Inc | FDC636P vs SDF504 |
IFN421 | Small Signal Field-Effect Transistor, 2-Element, N-Channel, Silicon, Junction FET, TO-78 | InterFET Corporation | FDC636P vs IFN421 |
LS5907 | Small Signal Field-Effect Transistor, | Linear Integrated Systems | FDC636P vs LS5907 |
NTUD3127CT5G | 160mA, 20V, 2 CHANNEL,N AND P-CHANNEL, Si, SMALL SIGNAL, MOSFET, LEAD FREE, CASE 527AA-01, 6 PIN | Rochester Electronics LLC | FDC636P vs NTUD3127CT5G |
SI3459BDV-T1-E3 | Small Signal Field-Effect Transistor, 0.0022A I(D), 60V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-193AA, ROHS COMPLIANT, TSOP-6 | Vishay Intertechnologies | FDC636P vs SI3459BDV-T1-E3 |
SI3433CDV-T1-GE3 | Small Signal Field-Effect Transistor, 5.2A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, MO-193AA, HALOGEN FREE AND ROHS COMPLIANT, TSOP-6 | Vishay Intertechnologies | FDC636P vs SI3433CDV-T1-GE3 |
NDS8926/D84Z | 5500mA, 20V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET | Texas Instruments | FDC636P vs NDS8926/D84Z |
2N5907 | TRANSISTOR 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, JFET, HERMETIC SEALED, TO-78, 6 PIN, FET General Purpose Small Signal | Micross Components | FDC636P vs 2N5907 |
U423 | Small Signal Field-Effect Transistor, 2-Element, N-Channel, Silicon, Junction FET, 0.022 X 0.022 INCH, DIE-6 | Solitron Devices Inc | FDC636P vs U423 |
SDF509 | Small Signal Field-Effect Transistor, 2-Element, N-Channel, Silicon, Junction FET, TO-71, | Solitron Devices Inc | FDC636P vs SDF509 |