Datasheets
FDC638P by:

Small Signal Field-Effect Transistor, 4.5A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SUPERSOT-6

Part Details for FDC638P by Fairchild Semiconductor Corporation

Overview of FDC638P by Fairchild Semiconductor Corporation

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Price & Stock for FDC638P

Part # Distributor Description Stock Price Buy
Bristol Electronics   5370
RFQ
Bristol Electronics   2898
RFQ
Bristol Electronics   1824
RFQ
Bristol Electronics   3000
RFQ
Quest Components MOSFET Transistor, P-Channel, TSOP 8800
  • 1 $0.3690
  • 1,162 $0.1538
  • 5,204 $0.1353
$0.1353 / $0.3690 Buy Now
Quest Components MOSFET Transistor, P-Channel, TSOP 4296
  • 1 $0.6150
  • 651 $0.2460
  • 3,253 $0.2153
$0.2153 / $0.6150 Buy Now
ComSIT USA P-CHANNEL 2.5V POWERTRENCH SPECIFIED MOSFET Small Signal Field-Effect Transistor, 4.5A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant Europe - 2915
RFQ
Chip 1 Exchange INSTOCK 5177
RFQ
Win Source Electronics MOSFET P-CH 20V 4.5A SSOT-6 272100
  • 150 $0.3400
  • 360 $0.2790
  • 560 $0.2700
  • 770 $0.2610
  • 990 $0.2530
  • 1,325 $0.2270
$0.2270 / $0.3400 Buy Now

Part Details for FDC638P

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FDC638P Part Data Attributes

FDC638P Fairchild Semiconductor Corporation
Buy Now Datasheet
Compare Parts:
FDC638P Fairchild Semiconductor Corporation Small Signal Field-Effect Transistor, 4.5A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SUPERSOT-6
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP
Part Package Code SSOT
Package Description LEAD FREE, SUPERSOT-6
Pin Count 6
Manufacturer Package Code 6LD, SUPERSOT6, JEDEC MO-193, 1.6MM WIDE
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 20 V
Drain Current-Max (ID) 4.5 A
Drain-source On Resistance-Max 0.048 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G6
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 6
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 1.6 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for FDC638P

This table gives cross-reference parts and alternative options found for FDC638P. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDC638P, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
FDC638P_NF073 Small Signal Field-Effect Transistor, 4.5A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SUPERSOT-6 Fairchild Semiconductor Corporation FDC638P vs FDC638P_NF073
FDC638P P-Channel PowerTrench® MOSFET, 2.5V specified, -20V, -4.5A, 48mΩ, 3000-REEL onsemi FDC638P vs FDC638P
FDC638PD87Z Small Signal Field-Effect Transistor, 4.5A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-6 Fairchild Semiconductor Corporation FDC638P vs FDC638PD87Z
FDC638PL99Z Small Signal Field-Effect Transistor, 4.5A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET Fairchild Semiconductor Corporation FDC638P vs FDC638PL99Z
Part Number Description Manufacturer Compare
STT5PF20V 5000mA, 20V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TSOP-6 STMicroelectronics FDC638P vs STT5PF20V
FDC640P_NL Small Signal Field-Effect Transistor, 4.5A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SUPERSOT-6 Fairchild Semiconductor Corporation FDC638P vs FDC640P_NL
FDC638PL99Z Small Signal Field-Effect Transistor, 4.5A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET Fairchild Semiconductor Corporation FDC638P vs FDC638PL99Z
SI3493BDV-T1-GE3 Small Signal Field-Effect Transistor, 8A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, TSOP-6 Vishay Intertechnologies FDC638P vs SI3493BDV-T1-GE3
FDC640PD87Z Small Signal Field-Effect Transistor, 4.5A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-6 Fairchild Semiconductor Corporation FDC638P vs FDC640PD87Z
PMN48XP Small Signal Field-Effect Transistor Nexperia FDC638P vs PMN48XP
SI3445DV_NL Small Signal Field-Effect Transistor, 5.5A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-6 Fairchild Semiconductor Corporation FDC638P vs SI3445DV_NL
PMN48XP,115 PMN48XP - 20 V, 4.1 A P-channel Trench MOSFET@en-us TSOP 6-Pin Nexperia FDC638P vs PMN48XP,115
FDC640P P-Channel PowerTrench® MOSFET, 2.5V specified, -20V, -4.5A, 53mΩ, 3000-REEL onsemi FDC638P vs FDC640P
SI3493DV-T1-E3 TRANSISTOR 5300 mA, 20 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, LEAD FREE, TSOP-6, FET General Purpose Small Signal Vishay Siliconix FDC638P vs SI3493DV-T1-E3

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