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Dual N-Channel PowerTrench® MOSFET, 2.5V Specified, 20V, 3.0A, 70mΩ, 3000-REEL
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
82C2449
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Newark | Dual N Channel Mosfet, 20V, Super Sot-6, Channel Type:N Channel, Drain Source Voltage Vds N Channel:20V, Drain Source Voltage Vds P Channel:-, Continuous Drain Current Id N Channel:3A, Continuous Drain Current Id P Channel:- Rohs Compliant: Yes |Onsemi FDC6401N Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 1646 |
|
$0.3020 / $0.6860 | Buy Now |
DISTI #
58M6621
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Newark | Dual Mosfet, Dual N Channel, 3 A, 20 V, 70 Mohm, 4.5 V, 900 Mv Rohs Compliant: Yes |Onsemi FDC6401N Min Qty: 5 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 5565 |
|
$0.2920 / $0.6760 | Buy Now |
DISTI #
67R2039
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Newark | Mosfet, Full Reel, Channel Type:N Channel, Drain Source Voltage Vds N Channel:20V, Drain Source Voltage Vds P Channel:-, Continuous Drain Current Id N Channel:3A, Continuous Drain Current Id P Channel:-, No. Of Pins:6Pins Rohs Compliant: Yes |Onsemi FDC6401N Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$0.2310 / $0.2580 | Buy Now |
DISTI #
25AC9529
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Newark | 20V/12V 70/95Mo Nch Dual Rohs Compliant: Yes |Onsemi FDC6401N Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$0.2290 / $0.2560 | Buy Now |
DISTI #
FDC6401NCT-ND
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DigiKey | MOSFET 2N-CH 20V 3A SSOT6 Min Qty: 1 Lead time: 16 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
14091 In Stock |
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$0.2130 / $0.6500 | Buy Now |
DISTI #
FDC6401N
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Avnet Americas | Transistor MOSFET Array Dual N-CH 20V 3A 6-Pin TSOT-23 T/R - Tape and Reel (Alt: FDC6401N) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 16 Weeks, 0 Days Container: Reel | 0 |
|
$0.2113 / $0.2522 | Buy Now |
DISTI #
FDC6401N
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Avnet Americas | Transistor MOSFET Array Dual N-CH 20V 3A 6-Pin TSOT-23 T/R - Tape and Reel (Alt: FDC6401N) RoHS: Compliant Min Qty: 6000 Package Multiple: 3000 Lead time: 16 Weeks, 0 Days Container: Reel | 0 |
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RFQ | |
DISTI #
FDC6401N
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Avnet Americas | Transistor MOSFET Array Dual N-CH 20V 3A 6-Pin TSOT-23 T/R - Tape and Reel (Alt: FDC6401N) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 16 Weeks, 0 Days Container: Reel | 0 |
|
$0.2079 / $0.2488 | Buy Now |
DISTI #
82C2449
|
Avnet Americas | Transistor MOSFET Array Dual N-CH 20V 3A 6-Pin TSOT-23 T/R - Product that comes on tape, but is not reeled (Alt: 82C2449) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 28 Weeks, 1 Days Container: Ammo Pack | 1646 Partner Stock |
|
$0.2960 | Buy Now |
DISTI #
512-FDC6401N
|
Mouser Electronics | MOSFET Dual N-Ch 2.5V Spec Power Trench RoHS: Compliant | 28426 |
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$0.2180 / $0.6600 | Buy Now |
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FDC6401N
onsemi
Buy Now
Datasheet
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Compare Parts:
FDC6401N
onsemi
Dual N-Channel PowerTrench® MOSFET, 2.5V Specified, 20V, 3.0A, 70mΩ, 3000-REEL
|
Pbfree Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | ONSEMI | |
Package Description | SUPERSOT-6 | |
Manufacturer Package Code | 419BL | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 48 Weeks | |
Samacsys Manufacturer | onsemi | |
Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 20 V | |
Drain Current-Max (ID) | 3 A | |
Drain-source On Resistance-Max | 0.07 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-G6 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 2 | |
Number of Terminals | 6 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 0.7 W | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for FDC6401N. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDC6401N, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
FDC6401NS62Z | Small Signal Field-Effect Transistor, 3A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-6 | Fairchild Semiconductor Corporation | FDC6401N vs FDC6401NS62Z |
FDC6401ND84Z | Small Signal Field-Effect Transistor, 3A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-6 | Fairchild Semiconductor Corporation | FDC6401N vs FDC6401ND84Z |
FDC6401ND87Z | Small Signal Field-Effect Transistor, 3A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-6 | Fairchild Semiconductor Corporation | FDC6401N vs FDC6401ND87Z |
FDC6401N_NL | Small Signal Field-Effect Transistor, 3A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-6 | Fairchild Semiconductor Corporation | FDC6401N vs FDC6401N_NL |
FDC6401N | Small Signal Field-Effect Transistor, 3A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-6 | Fairchild Semiconductor Corporation | FDC6401N vs FDC6401N |
FDC6401NL99Z | Small Signal Field-Effect Transistor, 3A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-6 | Fairchild Semiconductor Corporation | FDC6401N vs FDC6401NL99Z |