Part Details for FDC655BN by Fairchild Semiconductor Corporation
Overview of FDC655BN by Fairchild Semiconductor Corporation
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Price & Stock for FDC655BN
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 555 |
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RFQ | ||
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Bristol Electronics | Min Qty: 7 | 2835 |
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$0.1125 / $0.7500 | Buy Now |
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Quest Components | 6300 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET | 851 |
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$0.1584 / $0.2970 | Buy Now |
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Quest Components | 6300 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET | 2268 |
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$0.1500 / $1.0000 | Buy Now |
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Chip 1 Exchange | INSTOCK | 6074 |
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RFQ |
Part Details for FDC655BN
FDC655BN CAD Models
FDC655BN Part Data Attributes
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FDC655BN
Fairchild Semiconductor Corporation
Buy Now
Datasheet
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Compare Parts:
FDC655BN
Fairchild Semiconductor Corporation
Small Signal Field-Effect Transistor, 6.3A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SUPERSOT-6
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
| Part Package Code | SSOT | |
| Package Description | ROHS COMPLIANT, SUPERSOT-6 | |
| Pin Count | 6 | |
| Manufacturer Package Code | 6LD, SUPERSOT6, JEDEC MO-193, 1.6MM WIDE | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Additional Feature | ULTRA-LOW RESISTANCE | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 6.3 A | |
| Drain-source On Resistance-Max | 0.025 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 90 pF | |
| JESD-30 Code | R-PDSO-G6 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 6 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 1.6 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for FDC655BN
This table gives cross-reference parts and alternative options found for FDC655BN. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDC655BN, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| SDF504 | Small Signal Field-Effect Transistor, 2-Element, N-Channel, Silicon, Junction FET, TO-71, | Solitron Devices Inc | FDC655BN vs SDF504 |
| 2N5517 | Small Signal Field-Effect Transistor, 2-Element, N-Channel, Silicon, Junction FET, TO-71, | Solitron Devices Inc | FDC655BN vs 2N5517 |
| FDC636P | 2800mA, 20V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, SUPERSOT-6 | Rochester Electronics LLC | FDC655BN vs FDC636P |
| FDC655AND87Z | Small Signal Field-Effect Transistor, 6.3A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-6 | Fairchild Semiconductor Corporation | FDC655BN vs FDC655AND87Z |
| TPC8216-H | TRANSISTOR 6400 mA, 30 V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, ROHS COMPLIANT, 2-6J1E, 8 PIN, FET General Purpose Small Signal | Toshiba America Electronic Components | FDC655BN vs TPC8216-H |
| DMP3098LDM-7 | Small Signal Field-Effect Transistor, 4A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC PACKAGE-6 | Diodes Incorporated | FDC655BN vs DMP3098LDM-7 |
| SVN98AJ | Small Signal Field-Effect Transistor, Silicon, DIE | Solitron Devices Inc | FDC655BN vs SVN98AJ |
| SI6926ADQ-T1-GE3 | Small Signal Field-Effect Transistor, 4.1A I(D), 20V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, TSSOP-8 | Vishay Intertechnologies | FDC655BN vs SI6926ADQ-T1-GE3 |
| SI3441ADV | Small Signal Field-Effect Transistor, 3.3A I(D), 12V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, | Temic Semiconductors | FDC655BN vs SI3441ADV |
| NTGS1135PT1G | Power MOSFET 8V 4.6A 31 mOhm Single P-Channel TSOP-6, TSOP-6, 3000-REEL | onsemi | FDC655BN vs NTGS1135PT1G |