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Dual N-Channel PowerTrench® MOSFET, Logic Level, 30V, 2.5A, 95mΩ, 3000-REEL
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
58K8828
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Newark | Dual N Channel Mosfet, 30V, Super Sot-6, Channel Type:N Channel, Drain Source Voltage Vds N Channel:30V, Drain Source Voltage Vds P Channel:-, Continuous Drain Current Id N Channel:2.5A, Continuous Drain Current Id P Channel:- Rohs Compliant: Yes |Onsemi FDC6561AN Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 2237 |
|
$0.2700 / $0.6870 | Buy Now |
DISTI #
25M9447
|
Newark | Dual Mosfet, Dual N Channel, 2.5 A, 30 V, 0.082 Ohm, 10 V, 1.8 V Rohs Compliant: Yes |Onsemi FDC6561AN Min Qty: 5 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 41270 |
|
$0.2590 / $0.6760 | Buy Now |
DISTI #
25AC9532
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Newark | 30V Dual Ssot-6 Nch Rohs Compliant: Yes |Onsemi FDC6561AN Min Qty: 12000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
|
$0.2410 | Buy Now |
DISTI #
96W6878
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Newark | Mosfet, Dual N Ch, 30V, 2.5A, Supersot, Transistor Polarity:Dual N Channel, Continuous Drain Current Id:2.5A, Drain Source Voltage Vds:30V, On Resistance Rds(On):0.082Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:1.8V, Rohs Compliant: Yes |Onsemi FDC6561AN Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$0.2410 | Buy Now |
DISTI #
67R2043
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Newark | Mosfet, Full Reel, Channel Type:N Channel, Drain Source Voltage Vds N Channel:30V, Drain Source Voltage Vds P Channel:-, Continuous Drain Current Id N Channel:2.5A, Continuous Drain Current Id P Channel:-, No. Of Pins:6Pins Rohs Compliant: Yes |Onsemi FDC6561AN Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$0.2100 / $0.2220 | Buy Now |
DISTI #
FDC6561ANCT-ND
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DigiKey | MOSFET 2N-CH 30V 2.5A SSOT6 Min Qty: 1 Lead time: 16 Weeks Container: Digi-ReelĀ®, Cut Tape (CT), Tape & Reel (TR) |
4869 In Stock |
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$0.1910 / $0.6600 | Buy Now |
DISTI #
FDC6561AN
|
Avnet Americas | Transistor MOSFET Array Dual N-CH 30V 2.5A 6-Pin TSOT-23 T/R - Tape and Reel (Alt: FDC6561AN) RoHS: Compliant Min Qty: 6000 Package Multiple: 3000 Lead time: 16 Weeks, 0 Days Container: Reel | 0 |
|
RFQ | |
DISTI #
FDC6561AN
|
Avnet Americas | Transistor MOSFET Array Dual N-CH 30V 2.5A 6-Pin TSOT-23 T/R - Tape and Reel (Alt: FDC6561AN) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 16 Weeks, 0 Days Container: Reel | 735 Factory Stock |
|
$0.1846 / $0.2204 | Buy Now |
DISTI #
FDC6561AN
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Avnet Americas | Transistor MOSFET Array Dual N-CH 30V 2.5A 6-Pin TSOT-23 T/R - Tape and Reel (Alt: FDC6561AN) RoHS: Compliant Min Qty: 6000 Package Multiple: 3000 Lead time: 16 Weeks, 0 Days Container: Reel | 0 |
|
$0.1817 / $0.2174 | Buy Now |
DISTI #
58K8828
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Avnet Americas | Transistor MOSFET Array Dual N-CH 30V 2.5A 6-Pin TSOT-23 T/R - Product that comes on tape, but is not reeled (Alt: 58K8828) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 35 Weeks, 5 Days Container: Ammo Pack | 2237 Partner Stock |
|
$0.3730 / $0.6980 | Buy Now |
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FDC6561AN
onsemi
Buy Now
Datasheet
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Compare Parts:
FDC6561AN
onsemi
Dual N-Channel PowerTrench® MOSFET, Logic Level, 30V, 2.5A, 95mΩ, 3000-REEL
|
Pbfree Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | ONSEMI | |
Package Description | SUPERSOT-6 | |
Manufacturer Package Code | 419BL | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 43 Weeks | |
Samacsys Manufacturer | onsemi | |
Additional Feature | LOGIC LEVEL COMPATIBLE | |
Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 30 V | |
Drain Current-Max (ID) | 2.5 A | |
Drain-source On Resistance-Max | 0.095 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-G6 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 2 | |
Number of Terminals | 6 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 0.96 W | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) - annealed | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for FDC6561AN. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDC6561AN, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
FDC6561AN_NL | Small Signal Field-Effect Transistor, 2.5A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-6 | Fairchild Semiconductor Corporation | FDC6561AN vs FDC6561AN_NL |
FDC6561AN | Small Signal Field-Effect Transistor, 2.5A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-6 | Fairchild Semiconductor Corporation | FDC6561AN vs FDC6561AN |
FDC6561AN | 2500mA, 30V, 2 CHANNEL, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, SUPERSOT-6 | Rochester Electronics LLC | FDC6561AN vs FDC6561AN |
FDC6561AND87Z | Small Signal Field-Effect Transistor, 2.5A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-6 | Fairchild Semiconductor Corporation | FDC6561AN vs FDC6561AND87Z |