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Dual N-Channel PowerTrench® MOSFET, Logic Level, 30V, 2.5A, 95mΩ, TSOT-23-6, 3000-REEL
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
FDC6561AN by onsemi is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
58K8828
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Newark | Dual N Channel Mosfet, 30V, Super Sot-6, Channel Type:N Channel, Drain Source Voltage Vds N Channel:30V, Drain Source Voltage Vds P Channel:-, Continuous Drain Current Id N Channel:2.5A, Continuous Drain Current Id P Channel:- Rohs Compliant: Yes |Onsemi FDC6561AN RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape | 2037 |
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$0.2620 / $0.7500 | Buy Now |
DISTI #
67R2043
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Newark | Mosfet, Full Reel, Channel Type:N Channel, Drain Source Voltage Vds N Channel:30V, Drain Source Voltage Vds P Channel:-, Continuous Drain Current Id N Channel:2.5A, Continuous Drain Current Id P Channel:-, No. Of Pins:6Pins Rohs Compliant: Yes |Onsemi FDC6561AN RoHS: Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$0.2050 / $0.2120 | Buy Now |
DISTI #
FDC6561AN
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Avnet Americas | MOSFET Array, Dual N Channel, 30 V, 2.5 A, 95 MilliOhms, TSOT-23, 6 Pins - Tape and Reel (Alt: FDC6561AN) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 11 Weeks, 0 Days Container: Reel | 18000 |
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$0.1752 / $0.1816 | Buy Now |
DISTI #
FDC6561AN
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Avnet Americas | MOSFET Array, Dual N Channel, 30 V, 2.5 A, 95 MilliOhms, TSOT-23, 6 Pins - Tape and Reel (Alt: FDC6561AN) RoHS: Compliant Min Qty: 6000 Package Multiple: 3000 Container: Reel | 0 |
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$0.1751 / $0.1817 | Buy Now |
DISTI #
58K8828
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Avnet Americas | MOSFET Array, Dual N Channel, 30 V, 2.5 A, 95 MilliOhms, TSOT-23, 6 Pins - Product that comes on tape, but is not reeled (Alt: 58K8828) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 35 Weeks, 5 Days Container: Ammo Pack | 0 |
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$0.3730 / $0.6980 | Buy Now |
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Rochester Electronics | FDC6561 - Dual N-Channel PowerTrench MOSFET, Logic Level, 30V, 2.5A RoHS: Compliant Status: Active Min Qty: 1 | 735 |
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$0.1758 / $0.2068 | Buy Now |
DISTI #
FDC6561AN
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TME | Transistor: N-MOSFET x2, unipolar, 30V, 2.5A, 0.96W, SuperSOT-6 Min Qty: 1 | 1872 |
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$0.2300 / $0.6140 | Buy Now |
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ComSIT USA | DUAL N-CHANNEL LOGIC LEVEL POWERTRENCH MOSFET Small Signal Field-Effect Transistor, 2.5A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant |
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RFQ | |
DISTI #
FDC6561AN
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IBS Electronics | FDC6561AN ON Semiconductor Transistor MOSFET N-CH30V 2.5A 6-Pin TSOT-23 T/R, RoHS Min Qty: 1161 Package Multiple: 1 | 27000 |
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$0.1957 | Buy Now |
DISTI #
FDC6561AN
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Richardson RFPD | POWER MOSFET TRANSISTOR RoHS: Compliant Min Qty: 6000 | 0 |
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$0.1900 | Buy Now |
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FDC6561AN
onsemi
Buy Now
Datasheet
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Compare Parts:
FDC6561AN
onsemi
Dual N-Channel PowerTrench® MOSFET, Logic Level, 30V, 2.5A, 95mΩ, TSOT-23-6, 3000-REEL
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Pbfree Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | ONSEMI | |
Part Package Code | TSOT-23-6 | |
Package Description | SUPERSOT-6 | |
Manufacturer Package Code | 419BL | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Factory Lead Time | 35 Weeks, 5 Days | |
Samacsys Manufacturer | onsemi | |
Additional Feature | LOGIC LEVEL COMPATIBLE | |
Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 30 V | |
Drain Current-Max (ID) | 2.5 A | |
Drain-source On Resistance-Max | 0.095 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-G6 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 2 | |
Number of Terminals | 6 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 0.96 W | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Matte Tin (Sn) - annealed | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
This table gives cross-reference parts and alternative options found for FDC6561AN. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDC6561AN, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Manufacturer | Composite Price | Description | Compare |
---|---|---|---|---|
FDC6561AN_NL | Fairchild Semiconductor Corporation | Check for Price | Small Signal Field-Effect Transistor, 2.5A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-6 | FDC6561AN vs FDC6561AN_NL |
FDC6561AN | Fairchild Semiconductor Corporation | Check for Price | Small Signal Field-Effect Transistor, 2.5A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-6 | FDC6561AN vs FDC6561AN |
FDC6561AND87Z | Fairchild Semiconductor Corporation | Check for Price | Small Signal Field-Effect Transistor, 2.5A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-6 | FDC6561AN vs FDC6561AND87Z |
SI3948DVS62Z | Fairchild Semiconductor Corporation | Check for Price | Small Signal Field-Effect Transistor, 2.5A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-6 | FDC6561AN vs SI3948DVS62Z |
SI3948DV-T1-E3 | Vishay Intertechnologies | Check for Price | Small Signal Field-Effect Transistor, 2.5A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, TSOP-6 | FDC6561AN vs SI3948DV-T1-E3 |
SI3948DVD87Z | Fairchild Semiconductor Corporation | Check for Price | Small Signal Field-Effect Transistor, 2.5A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-6 | FDC6561AN vs SI3948DVD87Z |