Part Details for FDD6644S by Fairchild Semiconductor Corporation
Overview of FDD6644S by Fairchild Semiconductor Corporation
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for FDD6644S
Part # | Distributor | Description | Stock | Price | Buy | |
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Quest Components | 66 A, 30 V, 0.0085 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252 | 4293 |
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Part Details for FDD6644S
FDD6644S CAD Models
FDD6644S Part Data Attributes:
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FDD6644S
Fairchild Semiconductor Corporation
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Datasheet
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FDD6644S
Fairchild Semiconductor Corporation
Power Field-Effect Transistor, 66A I(D), 30V, 0.0085ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3
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Rohs Code | No | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
Part Package Code | TO-252 | |
Package Description | DPAK-3 | |
Pin Count | 3 | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
Avalanche Energy Rating (Eas) | 237 mJ | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 30 V | |
Drain Current-Max (ID) | 66 A | |
Drain-source On Resistance-Max | 0.0085 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-252 | |
JESD-30 Code | R-PSSO-G2 | |
JESD-609 Code | e0 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 57 W | |
Pulsed Drain Current-Max (IDM) | 100 A | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | Tin/Lead (Sn85Pb15) | |
Terminal Form | GULL WING | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for FDD6644S
This table gives cross-reference parts and alternative options found for FDD6644S. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDD6644S, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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IRF610B_FP001 | Power Field-Effect Transistor, 3.3A I(D), 200V, 1.5ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, TO-220, 3 PIN | Fairchild Semiconductor Corporation | FDD6644S vs IRF610B_FP001 |
FDP18N50 | Power Field-Effect Transistor, 18A I(D), 500V, 0.265ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, LEAD FREE, TO-220, 3 PIN | Fairchild Semiconductor Corporation | FDD6644S vs FDP18N50 |
PHD3055L | 12A, 60V, 0.18ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC PACKAGE-3 | NXP Semiconductors | FDD6644S vs PHD3055L |
STH8NA60 | 8A, 600V, 1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-218 | STMicroelectronics | FDD6644S vs STH8NA60 |
STD3NA50T4 | 2.7A, 500V, 3ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, DPAK-3 | STMicroelectronics | FDD6644S vs STD3NA50T4 |
IPP45N06S4L-08 | Power Field-Effect Transistor, 45A I(D), 60V, 0.0079ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, GREEN, PLASTIC, TO-220, 3 PIN | Infineon Technologies AG | FDD6644S vs IPP45N06S4L-08 |
934057024118 | 75A, 30V, 0.0152ohm, N-CHANNEL, Si, POWER, MOSFET, PLASTIC, SMD, D2PAK-3 | NXP Semiconductors | FDD6644S vs 934057024118 |
IRF620B | Power Field-Effect Transistor, 5A I(D), 200V, 0.8ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Fairchild Semiconductor Corporation | FDD6644S vs IRF620B |
SPP80N06S2L-06 | Power Field-Effect Transistor, 80A I(D), 55V, 0.0084ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC, TO-220, 3 PIN | Infineon Technologies AG | FDD6644S vs SPP80N06S2L-06 |
STP75NF75 | N channel 75 V, 0.0095 Ohm typ., 80 A STripFET II Power MOSFET in TO-220 package | STMicroelectronics | FDD6644S vs STP75NF75 |