Datasheets
FDG6318P by:

Small Signal Field-Effect Transistor, 0.5A I(D), 20V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SC-70, 6 PIN

Part Details for FDG6318P by Fairchild Semiconductor Corporation

Overview of FDG6318P by Fairchild Semiconductor Corporation

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Price & Stock for FDG6318P

Part # Distributor Description Stock Price Buy
Bristol Electronics   2570
RFQ
Bristol Electronics   2989
RFQ
Quest Components MOSFET Transistor, Matched Pair, P-Channel, SOT-363 5711
  • 1 $0.2400
  • 314 $0.1280
  • 1,564 $0.1040
$0.1040 / $0.2400 Buy Now
Quest Components MOSFET Transistor, Matched Pair, P-Channel, SOT-363 2391
  • 1 $0.8000
  • 140 $0.2400
  • 1,668 $0.1600
$0.1600 / $0.8000 Buy Now
Quest Components MOSFET Transistor, Matched Pair, P-Channel, SOT-363 2056
  • 1 $0.8000
  • 140 $0.2400
  • 1,668 $0.1600
$0.1600 / $0.8000 Buy Now

Part Details for FDG6318P

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FDG6318P Part Data Attributes:

FDG6318P Fairchild Semiconductor Corporation
Buy Now Datasheet
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FDG6318P Fairchild Semiconductor Corporation Small Signal Field-Effect Transistor, 0.5A I(D), 20V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SC-70, 6 PIN
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP
Part Package Code SC-70
Package Description SMALL OUTLINE, R-PDSO-G6
Pin Count 6
Manufacturer Package Code 6LD,SC70,EIAJ SC-88,1.25MM WIDE
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8541.21.00.95
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 20 V
Drain Current-Max (ID) 0.5 A
Drain-source On Resistance-Max 0.78 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G6
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 2
Number of Terminals 6
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 0.3 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for FDG6318P

This table gives cross-reference parts and alternative options found for FDG6318P. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDG6318P, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
FDG6318P_NL Small Signal Field-Effect Transistor, 0.5A I(D), 20V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SC-70, 6 PIN Fairchild Semiconductor Corporation FDG6318P vs FDG6318P_NL
FDG6318P Dual P-Channel, Digital FET -20 V, -0.5 A, 780 mΩ, 3000-REEL onsemi FDG6318P vs FDG6318P
FDG6318PZ Small Signal Field-Effect Transistor, 0.5A I(D), 20V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SC-70, 6 PIN Fairchild Semiconductor Corporation FDG6318P vs FDG6318PZ
FDG6318PZ 500mA, 20V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, SC-70, 6 PIN Rochester Electronics LLC FDG6318P vs FDG6318PZ
FDG6318PZ Dual P-Channel, Digital FET -20 V, -0.5 A, 780 mΩ, 3000-REEL onsemi FDG6318P vs FDG6318PZ
Part Number Description Manufacturer Compare
FDG6318P_NL Small Signal Field-Effect Transistor, 0.5A I(D), 20V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SC-70, 6 PIN Fairchild Semiconductor Corporation FDG6318P vs FDG6318P_NL
FDG6318P Dual P-Channel, Digital FET -20 V, -0.5 A, 780 mΩ, 3000-REEL onsemi FDG6318P vs FDG6318P
FDG6318PZ Small Signal Field-Effect Transistor, 0.5A I(D), 20V, 2-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SC-70, 6 PIN Fairchild Semiconductor Corporation FDG6318P vs FDG6318PZ
FDG6318PZ Dual P-Channel, Digital FET -20 V, -0.5 A, 780 mΩ, 3000-REEL onsemi FDG6318P vs FDG6318PZ
FDG6318PZ 500mA, 20V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, SC-70, 6 PIN Rochester Electronics LLC FDG6318P vs FDG6318PZ

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