Part Details for FDMC89521L by Fairchild Semiconductor Corporation
Results Overview of FDMC89521L by Fairchild Semiconductor Corporation
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
FDMC89521L Information
FDMC89521L by Fairchild Semiconductor Corporation is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.
A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.
Price & Stock for FDMC89521L
Part # | Distributor | Description | Stock | Price | Buy | |
---|---|---|---|---|---|---|
|
NexGen Digital | 4 |
|
RFQ | ||
|
Win Source Electronics | MOSFET 2N-CH 60V 8.2A POWER33 | 18000 |
|
$0.8347 / $1.2520 | Buy Now |
Part Details for FDMC89521L
FDMC89521L CAD Models
FDMC89521L Part Data Attributes
|
FDMC89521L
Fairchild Semiconductor Corporation
Buy Now
Datasheet
|
Compare Parts:
FDMC89521L
Fairchild Semiconductor Corporation
Small Signal Field-Effect Transistor, 8.2A I(D), 60V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 3 X 3 MM, ROHS COMPLIANT, POWER 33, MLP, 8 PIN
|
Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
Part Package Code | MLP | |
Package Description | 3 X 3 MM, ROHS COMPLIANT, POWER 33, MLP, 8 PIN | |
Pin Count | 8 | |
Manufacturer Package Code | 8LD, MLP, DUAL, NON-JEDEC, 3 X 3MM | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Case Connection | DRAIN | |
Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 60 V | |
Drain Current-Max (ID) | 8.2 A | |
Drain-source On Resistance-Max | 0.017 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 15 pF | |
JESD-30 Code | S-PDSO-N4 | |
JESD-609 Code | e4 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 2 | |
Number of Terminals | 4 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | SQUARE | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 1.9 W | |
Surface Mount | YES | |
Terminal Finish | NICKEL PALLADIUM GOLD | |
Terminal Form | NO LEAD | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |