Part Details for FDMC89521L by Fairchild Semiconductor Corporation
Overview of FDMC89521L by Fairchild Semiconductor Corporation
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Price & Stock for FDMC89521L
| Part # | Distributor | Description | Stock | Price | Buy | |
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NexGen Digital | 4 |
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RFQ | ||
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Win Source Electronics | MOSFET 2N-CH 60V 8.2A POWER33 | 37250 |
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$5.2760 / $7.9130 | Buy Now |
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Wuhan P&S | 60V,Dual N-Channel PowerTrench MOSFET Min Qty: 1 | 3000 |
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$1.1300 / $2.3300 | Buy Now |
Part Details for FDMC89521L
FDMC89521L CAD Models
FDMC89521L Part Data Attributes
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FDMC89521L
Fairchild Semiconductor Corporation
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Datasheet
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FDMC89521L
Fairchild Semiconductor Corporation
Small Signal Field-Effect Transistor, 8.2A I(D), 60V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, 3 X 3 MM, ROHS COMPLIANT, POWER 33, MLP, 8 PIN
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
| Part Package Code | MLP | |
| Package Description | 3 X 3 MM, ROHS COMPLIANT, POWER 33, MLP, 8 PIN | |
| Pin Count | 8 | |
| Manufacturer Package Code | 8LD, MLP, DUAL, NON-JEDEC, 3 X 3MM | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Case Connection | DRAIN | |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 60 V | |
| Drain Current-Max (ID) | 8.2 A | |
| Drain-source On Resistance-Max | 0.017 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| Feedback Cap-Max (Crss) | 15 pF | |
| JESD-30 Code | S-PDSO-N4 | |
| JESD-609 Code | e4 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 2 | |
| Number of Terminals | 4 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | SQUARE | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 1.9 W | |
| Surface Mount | YES | |
| Terminal Finish | NICKEL PALLADIUM GOLD | |
| Terminal Form | NO LEAD | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |