Datasheets
FDMC89521L by:

Dual N-Channel PowerTrench® MOSFET 60V, 8.2A, 17mΩ, WDFN-8, 3000-REEL

Part Details for FDMC89521L by onsemi

Results Overview of FDMC89521L by onsemi

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

FDMC89521L Information

FDMC89521L by onsemi is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for FDMC89521L

Part # Distributor Description Stock Price Buy
DISTI # 99AC9170
Newark Mosfet, Dual N-Ch, 60V, 8.2A, Power33, Transistor Polarity:N Channel, Continuous Drain Current Id:8.2A, Drain Source Voltage Vds:60V, On Resistance Rds(On):0.013Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:1.9V, Power Rohs Compliant: Yes |Onsemi FDMC89521L RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape 5503
  • 1 $2.1100
  • 10 $1.5000
  • 25 $1.4900
  • 50 $1.3100
  • 100 $1.1300
  • 250 $1.1200
  • 500 $0.9590
  • 1,000 $0.8950
$0.8950 / $2.1100 Buy Now
DISTI # 46W4316
Newark Fet 60V 17.0 Mohm Mlp/Reel |Onsemi FDMC89521L RoHS: Not Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel 0
  • 3,000 $1.0600
  • 6,000 $1.0100
  • 12,000 $0.9030
  • 18,000 $0.8690
  • 30,000 $0.8360
$0.8360 / $1.0600 Buy Now
DISTI # FDMC89521L
Avnet Americas Transistor MOSFET Array Dual N-CH 60V 8.2A 8-Pin Power 33 T/R - Tape and Reel (Alt: FDMC89521L) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 10 Weeks, 0 Days Container: Reel 0
  • 3,000 $0.8150
  • 6,000 $0.8052
  • 12,000 $0.7956
  • 18,000 $0.7918
  • 24,000 $0.7862
$0.7862 / $0.8150 Buy Now
DISTI # FDMC89521L
TME Transistor: N-MOSFET x2, unipolar, 60V, 8.2A, Idm: 40A, 16W, Power33 Min Qty: 1 0
  • 1 $1.6600
  • 5 $1.5000
  • 25 $1.3200
  • 100 $1.1900
  • 500 $1.1100
$1.1100 / $1.6600 RFQ
DISTI # FDMC89521L
Richardson RFPD POWER MOSFET TRANSISTOR RoHS: Compliant Min Qty: 3000 0
  • 3,000 $0.8400
$0.8400 Buy Now
DISTI # FDMC89521L
Avnet Asia Transistor MOSFET Array Dual N-CH 60V 8.2A 8-Pin Power 33 T/R (Alt: FDMC89521L) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 10 Weeks, 0 Days 0
  • 3,000 $0.8793
  • 6,000 $0.8679
  • 9,000 $0.8568
  • 15,000 $0.8459
  • 30,000 $0.8251
  • 75,000 $0.8052
  • 150,000 $0.7862
$0.7862 / $0.8793 Buy Now
DISTI # FDMC89521L
Avnet Silica Transistor MOSFET Array Dual NCH 60V 82A 8Pin Power 33 TR (Alt: FDMC89521L) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 11 Weeks, 0 Days Silica - 0
Buy Now
DISTI # FDMC89521L
EBV Elektronik Transistor MOSFET Array Dual NCH 60V 82A 8Pin Power 33 TR (Alt: FDMC89521L) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 13 Weeks, 0 Days EBV - 0
Buy Now
New Advantage Corporation Dual N-Channel 60 V 8.2 A 17 mOhm Surface Mount PowerTrench Mosfet -Power 33 RoHS: Compliant Min Qty: 1 Package Multiple: 3000 12000
  • 3,000 $1.1200
  • 12,000 $1.0500
$1.0500 / $1.1200 Buy Now

Part Details for FDMC89521L

FDMC89521L CAD Models

FDMC89521L Part Data Attributes

FDMC89521L onsemi
Buy Now Datasheet
Compare Parts:
FDMC89521L onsemi Dual N-Channel PowerTrench® MOSFET 60V, 8.2A, 17mΩ, WDFN-8, 3000-REEL
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer ONSEMI
Part Package Code WDFN-8
Package Description 3 X 3 MM, ROHS COMPLIANT, POWER 33, MLP, 8 PIN
Manufacturer Package Code 511DG
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Factory Lead Time 11 Weeks
Samacsys Manufacturer onsemi
Additional Feature AVALANCHE ENERGY RATED
Case Connection DRAIN
Configuration SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 60 V
Drain Current-Max (ID) 8.2 A
Drain-source On Resistance-Max 0.017 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 15 pF
JESD-30 Code S-PDSO-N4
JESD-609 Code e4
Moisture Sensitivity Level 1
Number of Elements 2
Number of Terminals 4
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape SQUARE
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation Ambient-Max 1.9 W
Power Dissipation-Max (Abs) 16 W
Surface Mount YES
Terminal Finish Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag)
Terminal Form NO LEAD
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

FDMC89521L Related Parts

FDMC89521L Frequently Asked Questions (FAQ)

  • A 2-layer or 4-layer PCB with a solid ground plane and thermal vias is recommended. The device should be placed near a thermal pad or heat sink to dissipate heat efficiently.

  • Ensure proper thermal design, use a heat sink if necessary, and follow the recommended operating conditions. Also, consider using a thermal interface material to improve heat transfer.

  • The maximum allowable voltage on the input pins is 5.5V, which is the absolute maximum rating. Operating the device above this voltage can cause permanent damage.

  • Yes, the FDMC89521L is qualified for automotive and high-reliability applications. However, additional testing and validation may be required to meet specific industry standards.

  • Check the power supply voltage, ensure proper pin connections, and verify that the device is not overheating. Also, review the application circuit and layout to ensure they meet the recommended design guidelines.

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