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Dual N-Channel PowerTrench® MOSFET 60V, 8.2A, 17mΩ, 3000-REEL
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
99AC9170
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Newark | Mosfet, Dual N-Ch, 60V, 8.2A, Power33, Transistor Polarity:N Channel, Continuous Drain Current Id:8.2A, Drain Source Voltage Vds:60V, On Resistance Rds(On):0.013Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:1.9V, Power Rohs Compliant: Yes |Onsemi FDMC89521L Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 664 |
|
$0.9670 / $1.8600 | Buy Now |
DISTI #
46W4316
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Newark | Fet 60V 17.0 Mohm Mlp/Reel |Onsemi FDMC89521L Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
|
$0.8360 / $1.0600 | Buy Now |
DISTI #
FDMC89521LCT-ND
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DigiKey | MOSFET 2N-CH 60V 8.2A 8PWR33 Min Qty: 1 Lead time: 20 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
7905 In Stock |
|
$0.8354 / $1.9900 | Buy Now |
DISTI #
FDMC89521L
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Avnet Americas | Transistor MOSFET Array Dual N-CH 60V 8.2A 8-Pin Power 33 T/R - Tape and Reel (Alt: FDMC89521L) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 20 Weeks, 0 Days Container: Reel | 0 |
|
$0.8287 / $0.9891 | Buy Now |
DISTI #
512-FDMC89521L
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Mouser Electronics | MOSFET 60V Dual N-Channel Power Trench MOSFET RoHS: Compliant | 12434 |
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$0.8350 / $1.7400 | Buy Now |
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Future Electronics | PT7 60/20V LL DUAL N-CHANNEL POWER TRENCH MOSFET RoHS: Compliant pbFree: Yes Min Qty: 3000 Package Multiple: 3000 Container: Reel | 12000Reel |
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$0.8650 | Buy Now |
DISTI #
FDMC89521L
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Avnet Americas | Transistor MOSFET Array Dual N-CH 60V 8.2A 8-Pin Power 33 T/R - Tape and Reel (Alt: FDMC89521L) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 20 Weeks, 0 Days Container: Reel | 0 |
|
$0.8287 / $0.9891 | Buy Now |
DISTI #
FDMC89521L
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TME | Transistor: N-MOSFET x2, unipolar, 60V, 8.2A, Idm: 40A, 16W, Power33 Min Qty: 1 | 0 |
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$1.1600 / $1.7400 | RFQ |
DISTI #
FDMC89521L
|
Avnet Americas | Transistor MOSFET Array Dual N-CH 60V 8.2A 8-Pin Power 33 T/R - Tape and Reel (Alt: FDMC89521L) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 20 Weeks, 0 Days Container: Reel | 0 |
|
$0.8287 / $0.9891 | Buy Now |
DISTI #
FDMC89521L
|
Avnet Asia | Transistor MOSFET Array Dual N-CH 60V 8.2A 8-Pin Power 33 T/R (Alt: FDMC89521L) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 20 Weeks, 0 Days | 0 |
|
$0.7862 / $0.8793 | Buy Now |
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FDMC89521L
onsemi
Buy Now
Datasheet
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FDMC89521L
onsemi
Dual N-Channel PowerTrench® MOSFET 60V, 8.2A, 17mΩ, 3000-REEL
|
Pbfree Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | ONSEMI | |
Package Description | 3 X 3 MM, ROHS COMPLIANT, POWER 33, MLP, 8 PIN | |
Manufacturer Package Code | 511DG | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Factory Lead Time | 68 Weeks | |
Samacsys Manufacturer | onsemi | |
Additional Feature | AVALANCHE ENERGY RATED | |
Case Connection | DRAIN | |
Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 60 V | |
Drain Current-Max (ID) | 8.2 A | |
Drain-source On Resistance-Max | 0.017 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 15 pF | |
JESD-30 Code | S-PDSO-N4 | |
JESD-609 Code | e4 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 2 | |
Number of Terminals | 4 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Operating Temperature-Min | -55 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | SQUARE | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation Ambient-Max | 1.9 W | |
Power Dissipation-Max (Abs) | 16 W | |
Surface Mount | YES | |
Terminal Finish | Nickel/Palladium/Gold/Silver (Ni/Pd/Au/Ag) | |
Terminal Form | NO LEAD | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |