Part Details for FDMS3622S by onsemi
Overview of FDMS3622S by onsemi
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
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Price & Stock for FDMS3622S
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
FDMS3622S
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Avnet Americas | Transistor MOSFET Array Dual N-CH 25V 30A/70A 8-Pin Power 56 T/R - Tape and Reel (Alt: FDMS3622S) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Container: Reel | 0 |
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RFQ | |
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DISTI #
FDMS3622S
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Avnet Americas | Transistor MOSFET Array Dual N-CH 25V 30A/70A 8-Pin Power 56 T/R - Tape and Reel (Alt: FDMS3622S) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Container: Reel | 0 |
|
RFQ | |
|
DISTI #
FDMS3622S
|
Avnet Americas | Transistor MOSFET Array Dual N-CH 25V 30A/70A 8-Pin Power 56 T/R - Tape and Reel (Alt: FDMS3622S) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Container: Reel | 0 |
|
RFQ |
Part Details for FDMS3622S
FDMS3622S CAD Models
FDMS3622S Part Data Attributes
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FDMS3622S
onsemi
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Datasheet
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FDMS3622S
onsemi
Asymmetric Dual N-Channel PowerTrench® Power Stage MOSFET, 25V, 3000-REEL
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| Pbfree Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | ONSEMI | |
| Package Description | ROHS COMPLIANT, PLASTIC, POWER 56, QFN-8 | |
| Manufacturer Package Code | 483AJ | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 4 Weeks | |
| Samacsys Manufacturer | onsemi | |
| Case Connection | DRAIN SOURCE | |
| Configuration | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 25 V | |
| Drain Current-Max (ID) | 17.5 A | |
| Drain-source On Resistance-Max | 0.005 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-N6 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 2 | |
| Number of Terminals | 6 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 2.5 W | |
| Surface Mount | YES | |
| Terminal Finish | Tin (Sn) | |
| Terminal Form | NO LEAD | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |