Part Details for FDMS3624S by Fairchild Semiconductor Corporation
Overview of FDMS3624S by Fairchild Semiconductor Corporation
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Price & Stock for FDMS3624S
Part # | Distributor | Description | Stock | Price | Buy | |
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ComSIT USA | 25 V ASYMMETRIC DUAL N-CHANNEL POWERTRENCH POWERSTAGE MOSFET Small Signal Field-Effect Transistor, 17.5A I(D), 25V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant | Europe - 1855 |
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RFQ | |
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Perfect Parts Corporation | 16742 |
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RFQ |
Part Details for FDMS3624S
FDMS3624S CAD Models
FDMS3624S Part Data Attributes
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FDMS3624S
Fairchild Semiconductor Corporation
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FDMS3624S
Fairchild Semiconductor Corporation
Small Signal Field-Effect Transistor, 17.5A I(D), 25V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, PLASTIC, POWER 56, QFN-8
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
Part Package Code | QFN | |
Package Description | ROHS COMPLIANT, PLASTIC, POWER 56, QFN-8 | |
Pin Count | 8 | |
Manufacturer Package Code | 8LD,PQFN, NON-JEDEC 5.0X6.0MM, DUAL DAP | |
Reach Compliance Code | not_compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.29.00.95 | |
Case Connection | DRAIN SOURCE | |
Configuration | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 25 V | |
Drain Current-Max (ID) | 17.5 A | |
Drain-source On Resistance-Max | 0.005 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-N6 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 2 | |
Number of Terminals | 6 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 2.5 W | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | NO LEAD | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |