Transistors
FDN338P
Description: 1600mA, 20V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, SUPERSOT-3

Overview of FDN338P by Rochester Electronics LLC

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Part Data Attributes for FDN338P by Rochester Electronics LLC

FDN338P
Rochester Electronics LLC
-
-
Pbfree Code
Yes
Rohs Code
Yes
Part Life Cycle Code
Active
Ihs Manufacturer
ROCHESTER ELECTRONICS LLC
Part Package Code
SOT
Package Description
SUPERSOT-3
Pin Count
3
Manufacturer Package Code
SUPERSOT
Reach Compliance Code
unknown
Additional Feature
LOGIC LEVEL COMPATIBLE
Configuration
SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min
20 V
Drain Current-Max (ID)
1.6 A
Drain-source On Resistance-Max
0.115 Ω
FET Technology
METAL-OXIDE SEMICONDUCTOR
JESD-30 Code
R-PDSO-G3
JESD-609 Code
e3
Moisture Sensitivity Level
1
Number of Elements
1
Number of Terminals
3
Operating Mode
ENHANCEMENT MODE
Package Body Material
PLASTIC/EPOXY
Package Shape
RECTANGULAR
Package Style
SMALL OUTLINE
Peak Reflow Temperature (Cel)
260
Polarity/Channel Type
P-CHANNEL
Qualification Status
COMMERCIAL
Surface Mount
YES
Terminal Finish
MATTE TIN
Terminal Form
GULL WING
Terminal Position
DUAL
Time@Peak Reflow Temperature-Max (s)
30
Transistor Application
SWITCHING
Transistor Element Material
SILICON
Want to compare parts?
  1. FDN338P
    Rochester Electronics LLC
    1600mA, 20V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, SUPERSOT-3
    VS

Alternate Parts for FDN338P

This table gives cross-reference parts and alternative options found for FDN338P. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDN338P, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number Description Manufacturer Compare
FDN338P-T/R Small Signal Field-Effect Transistor, 1.6A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET onsemi FDN338P vs FDN338P-T/R
FDN338P Small Signal Field-Effect Transistor, 1.6A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-3 Fairchild Semiconductor Corporation FDN338P vs FDN338P
FDN338PD87Z Small Signal Field-Effect Transistor, 1.6A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-3 Fairchild Semiconductor Corporation FDN338P vs FDN338PD87Z
FDN338P_NL Small Signal Field-Effect Transistor, 1.6A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-3 Fairchild Semiconductor Corporation FDN338P vs FDN338P_NL
FDN338PL99Z Small Signal Field-Effect Transistor, 1.6A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-3 Fairchild Semiconductor Corporation FDN338P vs FDN338PL99Z
Part Number Description Manufacturer Compare
FDN338P Small Signal Field-Effect Transistor, 1.6A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-3 Fairchild Semiconductor Corporation FDN338P vs FDN338P

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