Datasheets
FDN359AN by:

Small Signal Field-Effect Transistor, 2.7A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-3

Part Details for FDN359AN by Fairchild Semiconductor Corporation

Overview of FDN359AN by Fairchild Semiconductor Corporation

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Applications Industrial Automation Energy and Power Systems Renewable Energy

Price & Stock for FDN359AN

Part # Distributor Description Stock Price Buy
Bristol Electronics   1100
RFQ
Quest Components 2700 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET 1464
  • 1 $0.5000
  • 26 $0.2250
  • 223 $0.1500
$0.1500 / $0.5000 Buy Now
Rochester Electronics Small Signal Field-Effect Transistor, 2.7A, 30V, N-Channel, MOSFET RoHS: Compliant Status: Active Min Qty: 1 187084
  • 1 $0.2316
  • 25 $0.2270
  • 100 $0.2177
  • 500 $0.2084
  • 1,000 $0.1969
$0.1969 / $0.2316 Buy Now
Win Source Electronics MOSFET N-CH 30V 2.7A SSOT-3 204000
  • 60 $0.8740
  • 140 $0.7170
  • 220 $0.6950
  • 300 $0.6720
  • 385 $0.6500
  • 515 $0.5830
$0.5830 / $0.8740 Buy Now

Part Details for FDN359AN

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FDN359AN Part Data Attributes

FDN359AN Fairchild Semiconductor Corporation
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FDN359AN Fairchild Semiconductor Corporation Small Signal Field-Effect Transistor, 2.7A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-3
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP
Part Package Code SSOT
Package Description SUPERSOT-3
Pin Count 3
Manufacturer Package Code MOLDED PACKAGE, SUPERSOT, 3 LEAD
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8541.21.00.95
Additional Feature LOGIC LEVEL COMPATIBLE
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 2.7 A
Drain-source On Resistance-Max 0.046 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G3
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 0.5 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for FDN359AN

This table gives cross-reference parts and alternative options found for FDN359AN. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDN359AN, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
FDN359AND87Z Small Signal Field-Effect Transistor, 2.7A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-3 Fairchild Semiconductor Corporation FDN359AN vs FDN359AND87Z
FDN359AN 2700mA, 30V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, SUPERSOT-3 Rochester Electronics LLC FDN359AN vs FDN359AN
FDN359AN_NL Small Signal Field-Effect Transistor, 2.7A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-3 Fairchild Semiconductor Corporation FDN359AN vs FDN359AN_NL
Part Number Description Manufacturer Compare
FDN359AN_NL Small Signal Field-Effect Transistor, 2.7A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-3 Fairchild Semiconductor Corporation FDN359AN vs FDN359AN_NL
FDN359AND87Z Small Signal Field-Effect Transistor, 2.7A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-3 Fairchild Semiconductor Corporation FDN359AN vs FDN359AND87Z
FDN359AN 2700mA, 30V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, SUPERSOT-3 Rochester Electronics LLC FDN359AN vs FDN359AN

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