Part Details for FDN359AN by Fairchild Semiconductor Corporation
Overview of FDN359AN by Fairchild Semiconductor Corporation
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for FDN359AN
Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 1100 |
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RFQ | ||
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Quest Components | 2700 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET | 1464 |
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$0.1500 / $0.5000 | Buy Now |
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Rochester Electronics | Small Signal Field-Effect Transistor, 2.7A, 30V, N-Channel, MOSFET RoHS: Compliant Status: Active Min Qty: 1 | 187084 |
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$0.1969 / $0.2316 | Buy Now |
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Win Source Electronics | MOSFET N-CH 30V 2.7A SSOT-3 | 204000 |
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$0.5830 / $0.8740 | Buy Now |
Part Details for FDN359AN
FDN359AN CAD Models
FDN359AN Part Data Attributes
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FDN359AN
Fairchild Semiconductor Corporation
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Datasheet
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FDN359AN
Fairchild Semiconductor Corporation
Small Signal Field-Effect Transistor, 2.7A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-3
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
Part Package Code | SSOT | |
Package Description | SUPERSOT-3 | |
Pin Count | 3 | |
Manufacturer Package Code | MOLDED PACKAGE, SUPERSOT, 3 LEAD | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.21.00.95 | |
Additional Feature | LOGIC LEVEL COMPATIBLE | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 30 V | |
Drain Current-Max (ID) | 2.7 A | |
Drain-source On Resistance-Max | 0.046 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JESD-30 Code | R-PDSO-G3 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 0.5 W | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for FDN359AN
This table gives cross-reference parts and alternative options found for FDN359AN. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDN359AN, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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FDN359AND87Z | Small Signal Field-Effect Transistor, 2.7A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-3 | Fairchild Semiconductor Corporation | FDN359AN vs FDN359AND87Z |
FDN359AN | 2700mA, 30V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, SUPERSOT-3 | Rochester Electronics LLC | FDN359AN vs FDN359AN |
FDN359AN_NL | Small Signal Field-Effect Transistor, 2.7A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-3 | Fairchild Semiconductor Corporation | FDN359AN vs FDN359AN_NL |