Part Details for FDN359BN by Fairchild Semiconductor Corporation
Overview of FDN359BN by Fairchild Semiconductor Corporation
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for FDN359BN
Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 115 |
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RFQ | ||
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Quest Components | 2700 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET | 115 |
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$0.1920 / $0.2880 | Buy Now |
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Quest Components | 2700 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET | 6 |
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$0.5550 | Buy Now |
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Sense Electronic Company Limited | SOT-23 | 4431 |
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RFQ |
Part Details for FDN359BN
FDN359BN CAD Models
FDN359BN Part Data Attributes
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FDN359BN
Fairchild Semiconductor Corporation
Buy Now
Datasheet
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FDN359BN
Fairchild Semiconductor Corporation
Small Signal Field-Effect Transistor, 2.7A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-3
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
Part Package Code | SSOT | |
Package Description | SUPERSOT-3 | |
Pin Count | 3 | |
Manufacturer Package Code | MOLDED PACKAGE, SUPERSOT, 3 LEAD | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
HTS Code | 8541.21.00.95 | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 30 V | |
Drain Current-Max (ID) | 2.7 A | |
Drain-source On Resistance-Max | 0.046 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
Feedback Cap-Max (Crss) | 100 pF | |
JESD-30 Code | R-PDSO-G3 | |
JESD-609 Code | e3 | |
Moisture Sensitivity Level | 1 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | SMALL OUTLINE | |
Peak Reflow Temperature (Cel) | 260 | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 0.5 W | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Finish | MATTE TIN | |
Terminal Form | GULL WING | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | 30 | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for FDN359BN
This table gives cross-reference parts and alternative options found for FDN359BN. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDN359BN, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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FDN359BN | 2700mA, 30V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, SUPERSOT-3 | Rochester Electronics LLC | FDN359BN vs FDN359BN |