Datasheets
FDN359BN by:

Small Signal Field-Effect Transistor, 2.7A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-3

Part Details for FDN359BN by Fairchild Semiconductor Corporation

Overview of FDN359BN by Fairchild Semiconductor Corporation

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Applications Industrial Automation Energy and Power Systems Renewable Energy

Price & Stock for FDN359BN

Part # Distributor Description Stock Price Buy
Bristol Electronics   115
RFQ
Quest Components 2700 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET 115
  • 1 $0.2880
  • 18 $0.2400
  • 43 $0.1920
$0.1920 / $0.2880 Buy Now
Quest Components 2700 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET 6
  • 1 $0.5550
$0.5550 Buy Now
Sense Electronic Company Limited SOT-23 4431
RFQ

Part Details for FDN359BN

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FDN359BN Part Data Attributes

FDN359BN Fairchild Semiconductor Corporation
Buy Now Datasheet
Compare Parts:
FDN359BN Fairchild Semiconductor Corporation Small Signal Field-Effect Transistor, 2.7A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-3
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP
Part Package Code SSOT
Package Description SUPERSOT-3
Pin Count 3
Manufacturer Package Code MOLDED PACKAGE, SUPERSOT, 3 LEAD
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8541.21.00.95
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 2.7 A
Drain-source On Resistance-Max 0.046 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 100 pF
JESD-30 Code R-PDSO-G3
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 0.5 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for FDN359BN

This table gives cross-reference parts and alternative options found for FDN359BN. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDN359BN, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
FDN359BN 2700mA, 30V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, SUPERSOT-3 Rochester Electronics LLC FDN359BN vs FDN359BN
Part Number Description Manufacturer Compare
DN2530N3-G Small Signal Field-Effect Transistor, 0.175A I(D), 300V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92, GREEN PACKAGE-3 Supertex Inc FDN359BN vs DN2530N3-G
TN0620N3-G Small Signal Field-Effect Transistor, 0.25A I(D), 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92, TO-92, 3 PIN Supertex Inc FDN359BN vs TN0620N3-G
MMBF170 Small Signal Field-Effect Transistor, 0.5A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-236AB, TO-236AB, 3 PIN Fairchild Semiconductor Corporation FDN359BN vs MMBF170
2N7000-G Small Signal Field-Effect Transistor, 0.2A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92, GREEN PACKAGE-2 Supertex Inc FDN359BN vs 2N7000-G
VP0210N2 Small Signal Field-Effect Transistor, P-Channel, Metal-oxide Semiconductor FET, TO-39, TO-39, 3 PIN Supertex Inc FDN359BN vs VP0210N2
TN5325N3-G Small Signal Field-Effect Transistor, 0.215A I(D), 250V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-92, GREEN PACKAGE-3 Supertex Inc FDN359BN vs TN5325N3-G
BSS192 TRANSISTOR 200 mA, 240 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-243AA, PLASTIC, SC-62, 3 PIN, FET General Purpose Small Signal NXP Semiconductors FDN359BN vs BSS192
MMBF5103 Small Signal Field-Effect Transistor, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-23, 3 PIN Fairchild Semiconductor Corporation FDN359BN vs MMBF5103
BSS131E-6327 100mA, 240V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, SOT-23, 3 PIN Infineon Technologies AG FDN359BN vs BSS131E-6327
2N6659 Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET Vishay Siliconix FDN359BN vs 2N6659

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