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Transistors / Small Signal Field-Effect Transistors / FDN359BN
Datasheets
FDN359BN by:

N-Channel Logic Level PowerTrench® MOSFET 30V, 2.7A, 46mΩ, SOT-23-3, 3000-REEL

Part Details for FDN359BN by onsemi

Results Overview of FDN359BN by onsemi

Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

Applications Industrial Automation Energy and Power Systems Renewable Energy

FDN359BN Information

FDN359BN by onsemi is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for FDN359BN

Part # Distributor Description Stock Price Buy
DISTI # 46AC0805
Newark Mosfet, N-Ch, 30V, 2.7A, Supersot-3, Transistor Polarity:N Channel, Continuous Drain Current Id:2.7A, Drain Source Voltage Vds:30V, On Resistance Rds(On):0.026Ohm, Rds(On) Test Voltage Vgs:10V, Threshold Voltage Vgs:1.8V, Power Rohs Compliant: Yes |Onsemi FDN359BN RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape 5503
  • 1 $0.0940
  • 25 $0.0940
  • 50 $0.0940
  • 100 $0.0940
  • 250 $0.0940
$0.0940 Buy Now
DISTI # 15R3429
Newark N Channel Mosfet, 30V, 2.7Ma, Channel Type:N Channel, Drain Source Voltage Vds:30V, Continuous Drain Current Id:2.7Ma, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:1.8V Rohs Compliant: Yes |Onsemi FDN359BN RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape 2940
  • 1 $0.1240
  • 25 $0.1240
  • 50 $0.1240
  • 100 $0.1240
  • 250 $0.1240
$0.1240 Buy Now
DISTI # 04M9100
Newark N Channel Mosfet, 30V, 2.7Ma, Full Reel, Channel Type:N Channel, Drain Source Voltage Vds:30V, Continuous Drain Current Id:2.7Ma, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:1.8V Rohs Compliant: Yes |Onsemi FDN359BN RoHS: Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 0 Container: Reel 0
  • 3,000 $0.2080
  • 6,000 $0.1820
  • 12,000 $0.1620
  • 18,000 $0.1490
  • 30,000 $0.1350
$0.1350 / $0.2080 Buy Now
DISTI # FDN359BN
Avnet Americas Trans MOSFET N-CH 30V 2.7A 3-Pin SuperSOT T/R - Tape and Reel (Alt: FDN359BN) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 8 Weeks, 0 Days Container: Reel 12000
  • 3,000 $0.1056
$0.1056 Buy Now
DISTI # 46AC0805
Avnet Americas Trans MOSFET N-CH 30V 2.7A 3-Pin SuperSOT T/R - Product that comes on tape, but is not reeled (Alt: 46AC0805) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 32 Weeks, 4 Days Container: Ammo Pack 4701 Partner Stock
  • 1 $0.4780
  • 25 $0.4110
  • 50 $0.3480
  • 100 $0.2860
  • 250 $0.2550
$0.2550 / $0.4780 Buy Now
DISTI # 15R3429
Avnet Americas Trans MOSFET N-CH 30V 2.7A 3-Pin SuperSOT T/R - Product that comes on tape, but is not reeled (Alt: 15R3429) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 64 Weeks, 5 Days Container: Ammo Pack 2940 Partner Stock
  • 1 $0.5510
  • 25 $0.4110
  • 50 $0.3480
  • 100 $0.2860
  • 250 $0.2570
$0.2570 / $0.5510 Buy Now
Bristol Electronics   Min Qty: 9 1977
  • 9 $0.6000
  • 26 $0.3000
  • 168 $0.1800
  • 835 $0.1200
$0.1200 / $0.6000 Buy Now
Rochester Electronics FDN359 - N-Channel Logic Level PowerTrench MOSFET 30V, 2.7A RoHS: Compliant Status: Active Min Qty: 1 11911
  • 1 $0.1454
  • 25 $0.1425
  • 100 $0.1367
  • 500 $0.1309
  • 1,000 $0.1236
$0.1236 / $0.1454 Buy Now
DISTI # FDN359BN
TME Transistor: N-MOSFET, unipolar, 30V, 2.7A, 0.5W, SuperSOT-3 Min Qty: 1 0
  • 1 $0.4950
  • 10 $0.3310
  • 50 $0.2840
  • 100 $0.2250
  • 500 $0.1770
  • 1,000 $0.1610
  • 1,500 $0.1520
  • 3,000 $0.1310
  • 6,000 $0.1260
  • 9,000 $0.1250
$0.1250 / $0.4950 RFQ
DISTI # FDN359BN
Richardson RFPD POWER MOSFET TRANSISTOR RoHS: Compliant Min Qty: 6000 0
  • 6,000 $0.1300
$0.1300 Buy Now
DISTI # FDN359BN
Avnet Asia Trans MOSFET N-CH 30V 2.7A 3-Pin SuperSOT T/R (Alt: FDN359BN) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 8 Weeks, 0 Days 3000
  • 3,000 $0.1207
  • 6,000 $0.1127
  • 9,000 $0.1097
  • 15,000 $0.1070
  • 30,000 $0.1043
  • 75,000 $0.1018
  • 150,000 $0.0994
$0.0994 / $0.1207 Buy Now
DISTI # FDN359BN
Avnet Silica Trans MOSFET N-CH 30V 2.7A 3-Pin SuperSOT T/R (Alt: FDN359BN) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 9 Weeks, 0 Days Silica - 0
Buy Now
DISTI # C1S226600576714
Chip1Stop Trans MOSFET N-CH 30V 2.7A 3-Pin SuperSOT T/R RoHS: Compliant Container: Cut Tape 2699
  • 5 $0.4180
  • 50 $0.3130
  • 100 $0.2240
  • 200 $0.2230
  • 500 $0.1730
  • 1,000 $0.1600
$0.1600 / $0.4180 Buy Now
DISTI # FDN359BN
EBV Elektronik Trans MOSFET N-CH 30V 2.7A 3-Pin SuperSOT T/R (Alt: FDN359BN) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 10 Weeks, 0 Days EBV - 0
Buy Now
Win Source Electronics N-Channel Logic Level PowerTrench TM MOSFET | MOSFET N-CH 30V 2.7A SSOT3 136000
  • 885 $0.0568
  • 1,880 $0.0532
  • 2,920 $0.0514
  • 4,195 $0.0477
  • 5,450 $0.0459
  • 6,820 $0.0440
$0.0440 / $0.0568 Buy Now

Part Details for FDN359BN

FDN359BN CAD Models

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FDN359BN Part Data Attributes

Parametric Data
FDN359BN onsemi
Buy Now Datasheet
Compare Parts:
FDN359BN onsemi N-Channel Logic Level PowerTrench® MOSFET 30V, 2.7A, 46mΩ, SOT-23-3, 3000-REEL
Pbfree Code Yes
Part Life Cycle Code Active
Ihs Manufacturer ONSEMI
Part Package Code SOT-23-3
Package Description SUPERSOT-3
Manufacturer Package Code 527AG
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 64 Weeks, 5 Days
Samacsys Manufacturer onsemi
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 2.7 A
Drain-source On Resistance-Max 0.046 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 100 pF
JESD-30 Code R-PDSO-G3
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) NOT SPECIFIED
Polarity/Channel Type N-CHANNEL
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish Matte Tin (Sn) - annealed
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) NOT SPECIFIED
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for FDN359BN

This table gives cross-reference parts and alternative options found for FDN359BN. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDN359BN, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
FDN359AN onsemi $0.2728 N-Channel Logic Level PowerTrench™ MOSFET 30V, 2.7A, 46mΩ, SOT-23-3, 3000-REEL FDN359BN vs FDN359AN
FDN359AN Fairchild Semiconductor Corporation Check for Price Small Signal Field-Effect Transistor, 2.7A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-3 FDN359BN vs FDN359AN
FDN359AN_NL Fairchild Semiconductor Corporation Check for Price Small Signal Field-Effect Transistor, 2.7A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SUPERSOT-3 FDN359BN vs FDN359AN_NL

FDN359BN Related Parts

FDN359BN Frequently Asked Questions (FAQ)

  • The maximum operating temperature range for the FDN359BN is -55°C to 150°C.

  • To ensure proper biasing, follow the recommended biasing circuit and voltage levels specified in the datasheet, and consider factors like input impedance, output impedance, and load conditions.

  • For optimal thermal performance, use a PCB layout with a solid ground plane, keep the transistor away from heat sources, and consider using thermal vias or heat sinks if necessary.

  • Handle the FDN359BN with ESD-protective equipment, use anti-static packaging, and follow proper grounding procedures to prevent ESD damage.

  • The FDN359BN has a typical lifespan of 10-15 years, depending on operating conditions, and is designed to meet high-reliability standards, with a failure rate of < 1 FIT (failures per billion hours).

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