Part Details for FDS4501H by Fairchild Semiconductor Corporation
Overview of FDS4501H by Fairchild Semiconductor Corporation
- Distributor Offerings: (9 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Price & Stock for FDS4501H
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
2156-FDS4501H-ND
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DigiKey | MOSFET N/P-CH 30V 9.3A 8SOIC Min Qty: 415 Container: Bulk MARKETPLACE PRODUCT |
40090 In Stock |
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$0.7200 | Buy Now |
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Bristol Electronics | 1860 |
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RFQ | ||
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Bristol Electronics | 4599 |
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RFQ | ||
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Quest Components | MOSFET Transistor, Half Bridge, Complementary, SO | 10462 |
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$0.3542 / $1.0119 | Buy Now |
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Quest Components | MOSFET Transistor, Half Bridge, Complementary, SO | 1488 |
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$0.5903 / $1.6865 | Buy Now |
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Quest Components | MOSFET Transistor, Half Bridge, Complementary, SO | 1744 |
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$3.0000 / $6.0000 | Buy Now |
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Rochester Electronics | Small Signal Field-Effect Transistor, 9.3A, 30V, 2-Element, N-Channel and P-Channel, MOSFET RoHS: Compliant Status: End of Life / Last Time Buy Min Qty: 1 | 40090 |
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$0.6209 / $0.7305 | Buy Now |
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Chip1Cloud | MOSFET N/P-CH 30V/20V 8SOIC | 2790 |
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RFQ | |
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Sense Electronic Company Limited | 3.9mm | 1120 |
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RFQ |
Part Details for FDS4501H
FDS4501H CAD Models
FDS4501H Part Data Attributes:
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FDS4501H
Fairchild Semiconductor Corporation
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Datasheet
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FDS4501H
Fairchild Semiconductor Corporation
Small Signal Field-Effect Transistor, 9.3A I(D), 30V, 2-Element, N-Channel and P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
| Part Package Code | SOIC | |
| Package Description | SO-8 | |
| Pin Count | 8 | |
| Manufacturer Package Code | 8LD, JEDEC MS-012, .150"NARROW BODY | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.29.00.95 | |
| Configuration | SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 30 V | |
| Drain Current-Max (ID) | 9.3 A | |
| Drain-source On Resistance-Max | 0.018 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-G8 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 2 | |
| Number of Terminals | 8 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL AND P-CHANNEL | |
| Power Dissipation-Max (Abs) | 2.5 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |