Datasheets
FDS6609A by:

Small Signal Field-Effect Transistor, 6.3A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8

Part Details for FDS6609A by Fairchild Semiconductor Corporation

Overview of FDS6609A by Fairchild Semiconductor Corporation

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Price & Stock for FDS6609A

Part # Distributor Description Stock Price Buy
Quest Components 6300 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET 3990
  • 1 $1.9500
  • 616 $0.8970
  • 1,116 $0.8190
$0.8190 / $1.9500 Buy Now
Rochester Electronics Small Signal Field-Effect Transistor, 6.3A, 30V, P-Channel MOSFET ' RoHS: Compliant Status: Obsolete Min Qty: 1 185
  • 1 $1.2300
  • 25 $1.2000
  • 100 $1.1500
  • 500 $1.1100
  • 1,000 $1.0400
$1.0400 / $1.2300 Buy Now
Chip1Cloud MOSFET P-CH 30V 6.3A 8SOIC 9000
RFQ
Component Electronics, Inc IN STOCK SHIP TODAY 51
  • 1 $1.1500
  • 100 $0.8700
  • 1,000 $0.7500
$0.7500 / $1.1500 Buy Now

Part Details for FDS6609A

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FDS6609A Part Data Attributes:

FDS6609A Fairchild Semiconductor Corporation
Buy Now Datasheet
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FDS6609A Fairchild Semiconductor Corporation Small Signal Field-Effect Transistor, 6.3A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP
Part Package Code SOT
Package Description SOIC-8
Pin Count 8
Reach Compliance Code unknown
ECCN Code EAR99
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 30 V
Drain Current-Max (ID) 6.3 A
Drain-source On Resistance-Max 0.032 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G8
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 8
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Polarity/Channel Type P-CHANNEL
Power Dissipation-Max (Abs) 2.5 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position DUAL
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for FDS6609A

This table gives cross-reference parts and alternative options found for FDS6609A. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDS6609A, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
FDS6609AL86Z Small Signal Field-Effect Transistor, 6.3A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8 Fairchild Semiconductor Corporation FDS6609A vs FDS6609AL86Z
FDS6609A_NL Small Signal Field-Effect Transistor, 6.3A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8 Fairchild Semiconductor Corporation FDS6609A vs FDS6609A_NL
FDS6609AD84Z Small Signal Field-Effect Transistor, 6.3A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8 Fairchild Semiconductor Corporation FDS6609A vs FDS6609AD84Z
FDS6609AF011 Small Signal Field-Effect Transistor, 6.3A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8 Fairchild Semiconductor Corporation FDS6609A vs FDS6609AF011
FDS6609A 6300mA, 30V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, SOIC-8 Rochester Electronics LLC FDS6609A vs FDS6609A
Part Number Description Manufacturer Compare
FDS6675A_NL Small Signal Field-Effect Transistor, 11A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 Fairchild Semiconductor Corporation FDS6609A vs FDS6675A_NL
SI4425BDY-T1-GE3 TRANSISTOR 8800 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, HALOGEN FREE AND ROHS COMPLIANT, SOP-8, FET General Purpose Small Signal Vishay Siliconix FDS6609A vs SI4425BDY-T1-GE3
FDS4435BZ Small Signal Field-Effect Transistor, 8.8A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SOP-8 Fairchild Semiconductor Corporation FDS6609A vs FDS4435BZ
FDS9435AL86Z Small Signal Field-Effect Transistor, 5.3A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 Fairchild Semiconductor Corporation FDS6609A vs FDS9435AL86Z
FDW262P_NL Small Signal Field-Effect Transistor, 4.5A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TSSOP-8 Fairchild Semiconductor Corporation FDS6609A vs FDW262P_NL
FDS6675F011 Small Signal Field-Effect Transistor, 11A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8 Fairchild Semiconductor Corporation FDS6609A vs FDS6675F011
FDS6575S62Z Small Signal Field-Effect Transistor, 10A I(D), 20V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 Fairchild Semiconductor Corporation FDS6609A vs FDS6575S62Z
FDS6675 Single P-Channel Logic Level PowerTrench™ MOSFET -30V, -11A, 14mΩ, 2500-REEL onsemi FDS6609A vs FDS6675
FDS4435AL86Z Small Signal Field-Effect Transistor, 9A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 Fairchild Semiconductor Corporation FDS6609A vs FDS4435AL86Z
FDS6675_NL Small Signal Field-Effect Transistor, 11A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, SO-8 Fairchild Semiconductor Corporation FDS6609A vs FDS6675_NL

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