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Transistors / Small Signal Field-Effect Transistors / FDS6670A
Datasheets
FDS6670A by:

Single N-Channel Logic Level PowerTrench® MOSFET 30V, 13A, 8mΩ, SOIC-8, 2500-REEL

Part Details for FDS6670A by onsemi

Results Overview of FDS6670A by onsemi

Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

FDS6670A Information

FDS6670A by onsemi is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for FDS6670A

Part # Distributor Description Stock Price Buy
DISTI # 78K5940
Newark N Channel Mosfet, 30V, 13A, Soic, Channel Type:N Channel, Drain Source Voltage Vds:30V, Continuous Drain Current Id:13A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:1.8V Rohs Compliant: Yes |Onsemi FDS6670A RoHS: Compliant Min Qty: 2500 Package Multiple: 1 Date Code: 0 Container: Cut Tape 0
  • 500 $0.4540
$0.4540 Buy Now
DISTI # 58P0618
Newark Mosfet, Full Reel, Channel Type:N Channel, Drain Source Voltage Vds:30V, Continuous Drain Current Id:13A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:1.8V, Power Dissipation:2.5W Rohs Compliant: Yes |Onsemi FDS6670A RoHS: Compliant Min Qty: 2500 Package Multiple: 1 Date Code: 0 Container: Reel 0
  • 2,500 $0.3690
  • 5,000 $0.3560
  • 10,000 $0.3420
  • 15,000 $0.3400
$0.3400 / $0.3690 Buy Now
DISTI # FDS6670A
Avnet Americas Trans MOSFET N-CH 30V 13A 8-Pin SOIC N T/R - Tape and Reel (Alt: FDS6670A) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 12 Weeks, 0 Days Container: Reel 0
  • 2,500 $0.3194
  • 5,000 $0.3146
  • 10,000 $0.3098
  • 15,000 $0.3049
  • 20,000 $0.3001
$0.3001 / $0.3194 Buy Now
DISTI # FDS6670A
Avnet Americas Trans MOSFET N-CH 30V 13A 8-Pin SOIC N T/R - Tape and Reel (Alt: FDS6670A) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Container: Reel 0
  • 2,500 $0.3194
  • 5,000 $0.3146
  • 10,000 $0.3098
  • 15,000 $0.3049
  • 20,000 $0.3001
$0.3001 / $0.3194 Buy Now
DISTI # FDS6670A
Avnet Americas Trans MOSFET N-CH 30V 13A 8-Pin SOIC N T/R - Tape and Reel (Alt: FDS6670A) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 12 Weeks, 0 Days Container: Reel 0
RFQ
Rochester Electronics FDS6670A - Small Signal Field-Effect Transistor, 13A, 30V, N-Channel, MOSFET RoHS: Compliant Status: Active Min Qty: 1 333674
  • 1 $0.3361
  • 25 $0.3294
  • 100 $0.3159
  • 500 $0.3025
  • 1,000 $0.2857
$0.2857 / $0.3361 Buy Now
DISTI # FDS6670A
IBS Electronics N-CHANNEL POWERTRENCH&#xAE, MOSFET LOGIC LEVEL 30V 13A 8M&#x3A9, Min Qty: 2500 Package Multiple: 1 0
  • 2,500 $0.3923
  • 5,000 $0.3923
  • 7,500 $0.3857
  • 10,000 $0.3857
  • 12,500 $0.3790
$0.3790 / $0.3923 Buy Now
DISTI # FDS6670A
Richardson RFPD POWER MOSFET TRANSISTOR RoHS: Compliant Min Qty: 2500 0
  • 2,500 $0.3000
$0.3000 Buy Now
DISTI # FDS6670A
Avnet Asia Trans MOSFET N-CH 30V 13A 8-Pin SOIC N T/R (Alt: FDS6670A) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 12 Weeks, 0 Days 5000
  • 2,500 $0.3623
  • 5,000 $0.3297
  • 7,500 $0.3269
  • 12,500 $0.3236
  • 25,000 $0.3205
$0.3205 / $0.3623 Buy Now
DISTI # FDS6670A
Avnet Silica Trans MOSFET NCH 30V 13A 8Pin SOIC N TR (Alt: FDS6670A) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 13 Weeks, 0 Days Silica - 0
Buy Now
DISTI # FDS6670A
EBV Elektronik Trans MOSFET NCH 30V 13A 8Pin SOIC N TR (Alt: FDS6670A) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 14 Weeks, 0 Days EBV - 0
Buy Now
LCSC 30V 13A 8m10V13A 2.5W 3V 1 N-channel SOIC-8 MOSFETs ROHS 3
  • 1 $0.5263
  • 10 $0.5155
  • 30 $0.5077
  • 100 $0.5000
$0.5000 / $0.5263 Buy Now

Part Details for FDS6670A

FDS6670A CAD Models

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FDS6670A Part Data Attributes

Parametric Data
FDS6670A onsemi
Buy Now Datasheet
Compare Parts:
FDS6670A onsemi Single N-Channel Logic Level PowerTrench® MOSFET 30V, 13A, 8mΩ, SOIC-8, 2500-REEL
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer ONSEMI
Part Package Code SOIC-8
Package Description SOP-8
Manufacturer Package Code 751EB
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Factory Lead Time 12 Weeks
Samacsys Manufacturer onsemi

Alternate Parts for FDS6670A

This table gives cross-reference parts and alternative options found for FDS6670A. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDS6670A, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
FDS6670A Fairchild Semiconductor Corporation Check for Price Small Signal Field-Effect Transistor, 13A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, LEAD FREE, SO-8 FDS6670A vs FDS6670A
FDS6670AL86Z Fairchild Semiconductor Corporation Check for Price Small Signal Field-Effect Transistor, 13A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8 FDS6670A vs FDS6670AL86Z
NDS8426A Rochester Electronics LLC Check for Price 10500mA, 20V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, SOIC-8 FDS6670A vs NDS8426A
FDS6680AF011 Fairchild Semiconductor Corporation Check for Price Small Signal Field-Effect Transistor, 12.5A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8 FDS6670A vs FDS6680AF011
BSO064N03S Infineon Technologies AG Check for Price Small Signal Field-Effect Transistor, 12A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, MS-012AA, GREEN, PLASTIC PACKAGE-8 FDS6670A vs BSO064N03S
FDS7760AS62Z Fairchild Semiconductor Corporation Check for Price Small Signal Field-Effect Transistor, 15A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8 FDS6670A vs FDS7760AS62Z
UPA1806GR-9JG-A Renesas Electronics Corporation Check for Price 13000mA, 30V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, POWER, TSSOP-8 FDS6670A vs UPA1806GR-9JG-A
FDS6670AF011 Fairchild Semiconductor Corporation Check for Price Small Signal Field-Effect Transistor, 13A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8 FDS6670A vs FDS6670AF011
FDS7760AF011 Fairchild Semiconductor Corporation Check for Price Small Signal Field-Effect Transistor, 15A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOIC-8 FDS6670A vs FDS7760AF011
SI4354DY-T1-E3 Vishay Siliconix Check for Price Small Signal Field-Effect Transistor, 9.5A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT, SOP-8 FDS6670A vs SI4354DY-T1-E3

FDS6670A Related Parts

FDS6670A Frequently Asked Questions (FAQ)

  • The recommended operating voltage range for the FDS6670A is 4.5V to 18V.

  • To ensure proper biasing, connect the gate of the FDS6670A to a voltage source through a resistor, and connect the source to ground through another resistor. The recommended biasing voltage is around 2.5V to 3.5V.

  • The maximum current rating for the FDS6670A is 10A. However, it's recommended to operate the device at a maximum current of 5A to ensure reliable operation and minimize thermal stress.

  • To protect the FDS6670A from overvoltage and overcurrent conditions, use a voltage regulator to regulate the input voltage, and add a current-sensing resistor and a fuse in series with the device to detect and respond to overcurrent conditions.

  • The thermal resistance of the FDS6670A is 2.5°C/W. To ensure proper thermal management, use a heat sink with a thermal resistance of 1°C/W or lower, and ensure good airflow around the device.

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