Part Details for FDU7N60NZTU by onsemi
Overview of FDU7N60NZTU by onsemi
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Price & Stock for FDU7N60NZTU
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
54T8364
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Newark | Uf2 600V 1.25Ohm Ipak/Tube Rohs Compliant: Yes |Onsemi FDU7N60NZTU Min Qty: 5040 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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$0.5050 / $0.5200 | Buy Now |
Part Details for FDU7N60NZTU
FDU7N60NZTU CAD Models
FDU7N60NZTU Part Data Attributes:
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FDU7N60NZTU
onsemi
Buy Now
Datasheet
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FDU7N60NZTU
onsemi
Power MOSFET, N-Channel, UniFETTM II, 600 V, 5.5 A, 1.25 Ω, IPAK, 5040-TUBE
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| Pbfree Code | Yes | |
| Part Life Cycle Code | End Of Life | |
| Ihs Manufacturer | ONSEMI | |
| Package Description | IPAK-3 | |
| Manufacturer Package Code | 369AR | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 4 Weeks | |
| Samacsys Manufacturer | onsemi | |
| Avalanche Energy Rating (Eas) | 347 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 600 V | |
| Drain Current-Max (ID) | 5.5 A | |
| Drain-source On Resistance-Max | 1.25 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-251AA | |
| JESD-30 Code | R-PSIP-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | IN-LINE | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 90 W | |
| Pulsed Drain Current-Max (IDM) | 22 A | |
| Surface Mount | NO | |
| Terminal Finish | Matte Tin (Sn) - annealed | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |