Part Details for FDV303N by Fairchild Semiconductor Corporation
Overview of FDV303N by Fairchild Semiconductor Corporation
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Space Technology
Aerospace and Defense
Price & Stock for FDV303N
| Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 9178 |
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RFQ | ||
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Bristol Electronics | 6783 |
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RFQ | ||
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Quest Components | MOSFET Transistor, N-Channel, TO-236AB | 3562 |
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$0.0447 / $0.1376 | Buy Now |
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Quest Components | MOSFET Transistor, N-Channel, TO-236AB | 112 |
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$0.0900 / $0.2000 | Buy Now |
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Quest Components | MOSFET Transistor, N-Channel, TO-236AB | 1920 |
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$0.1032 / $0.3440 | Buy Now |
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Quest Components | MOSFET Transistor, N-Channel, TO-236AB | 884 |
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$0.1032 / $0.3440 | Buy Now |
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Quest Components | MOSFET Transistor, N-Channel, TO-236AB | 390 |
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$0.1032 / $0.3440 | Buy Now |
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Quest Components | MOSFET Transistor, N-Channel, TO-236AB | 2040 |
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$0.1400 / $0.7000 | Buy Now |
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ComSIT USA | DIGITAL FET, N-CHANNEL Small Signal Field-Effect Transistor, 0.68A I(D), 25V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET RoHS: Compliant | Europe - 27000 |
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RFQ | |
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NexGen Digital | 1 |
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RFQ |
Part Details for FDV303N
FDV303N CAD Models
FDV303N Part Data Attributes
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FDV303N
Fairchild Semiconductor Corporation
Buy Now
Datasheet
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Compare Parts:
FDV303N
Fairchild Semiconductor Corporation
Small Signal Field-Effect Transistor, 0.68A I(D), 25V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | FAIRCHILD SEMICONDUCTOR CORP | |
| Part Package Code | SOT-23 | |
| Pin Count | 3 | |
| Manufacturer Package Code | 3LD, SOT23, JEDEC TO-236, LOW PROFILE | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 25 V | |
| Drain Current-Max (ID) | 0.68 A | |
| Drain-source On Resistance-Max | 0.45 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-G3 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 0.35 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for FDV303N
This table gives cross-reference parts and alternative options found for FDV303N. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDV303N, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| ME2324D-G | Small Signal Field-Effect Transistor, 0.71A I(D), 25V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN PACKAGE-3 | Force Mos Technology Co Ltd | FDV303N vs ME2324D-G |
| FDV303NS62Z | Small Signal Field-Effect Transistor, 0.68A I(D), 25V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Fairchild Semiconductor Corporation | FDV303N vs FDV303NS62Z |
| FDV303N | 680mA, 25V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET | Rochester Electronics LLC | FDV303N vs FDV303N |
| FDV303ND87Z | Small Signal Field-Effect Transistor, 0.68A I(D), 25V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Fairchild Semiconductor Corporation | FDV303N vs FDV303ND87Z |
| FDV303N_NL | Small Signal Field-Effect Transistor, 0.68A I(D), 25V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET | Fairchild Semiconductor Corporation | FDV303N vs FDV303N_NL |