Datasheets
FDV303N by:

N-Channel Digital FET 25V, 0.68A, 0.45Ω, SOT-23 (TO-236) 2.90x1.30x1.00, 1.90P, 3000-REEL

Part Details for FDV303N by onsemi

Results Overview of FDV303N by onsemi

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Applications Space Technology Aerospace and Defense

FDV303N Information

FDV303N by onsemi is a Small Signal Field-Effect Transistor.
Small Signal Field-Effect Transistors are under the broader part category of Transistors.

A transistor is a small semiconductor device used to amplify, control, or create electrical signals. When selecting a transistor, factors such as voltage, current rating, gain, and power dissipation must be considered, with common types. Read more about Transistors on our Transistors part category page.

Price & Stock for FDV303N

Part # Distributor Description Stock Price Buy
DISTI # 04X6278
Newark Mosfet Transistor, N Channel, 680 Ma, 25 V, 0.33 Ohm, 4.5 V, 800 Mv Rohs Compliant: Yes |Onsemi FDV303N RoHS: Compliant Min Qty: 3000 Package Multiple: 1 Date Code: 1 Container: Reel 277000
  • 3,000 $0.0760
  • 6,000 $0.0740
  • 12,000 $0.0710
  • 18,000 $0.0700
  • 30,000 $0.0690
$0.0690 / $0.0760 Buy Now
DISTI # 58K8857
Newark N Channel Mosfet, 25V, 680Ma Sot-23, Channel Type:N Channel, Drain Source Voltage Vds:25V, Continuous Drain Current Id:680Ma, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:4.5V, Gate Source Threshold Voltage Max:800Mv Rohs Compliant: Yes |Onsemi FDV303N RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 1 Container: Cut Tape 71028
  • 1 $0.0680
  • 50 $0.0680
  • 100 $0.0680
  • 250 $0.0620
$0.0620 / $0.0680 Buy Now
DISTI # FDV303N
Avnet Americas Power MOSFET, N Channel, 25 V, 680 mA, 450 Milliohms, SOT-23 (TO-236), 3Pins, Surface Mount - Tape and Reel (Alt: FDV303N) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 11 Weeks, 0 Days Container: Reel 237000
RFQ
DISTI # FDV303N
Avnet Americas Power MOSFET, N Channel, 25 V, 680 mA, 450 Milliohms, SOT-23 (TO-236), 3Pins, Surface Mount - Tape and Reel (Alt: FDV303N) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 11 Weeks, 0 Days Container: Reel 18000
RFQ
DISTI # FDV303N
Avnet Americas Power MOSFET, N Channel, 25 V, 680 mA, 450 Milliohms, SOT-23 (TO-236), 3Pins, Surface Mount - Tape and Reel (Alt: FDV303N) RoHS: Compliant Min Qty: 30000 Package Multiple: 15000 Lead time: 11 Weeks, 0 Days Container: Reel 0
  • 30,000 $0.0451
  • 60,000 $0.0446
  • 90,000 $0.0440
  • 150,000 $0.0438
  • 300,000 $0.0435
$0.0435 / $0.0451 Buy Now
DISTI # FDV303N
Avnet Americas Power MOSFET, N Channel, 25 V, 680 mA, 450 Milliohms, SOT-23 (TO-236), 3Pins, Surface Mount - Tape and Reel (Alt: FDV303N) RoHS: Compliant Min Qty: 30000 Package Multiple: 15000 Lead time: 11 Weeks, 0 Days Container: Reel 0
  • 30,000 $0.0451
  • 60,000 $0.0446
  • 90,000 $0.0440
  • 150,000 $0.0438
  • 300,000 $0.0435
$0.0435 / $0.0451 Buy Now
DISTI # FDV303N
Avnet Americas Power MOSFET, N Channel, 25 V, 680 mA, 450 Milliohms, SOT-23 (TO-236), 3Pins, Surface Mount - Tape and Reel (Alt: FDV303N) RoHS: Compliant Min Qty: 30000 Package Multiple: 15000 Container: Reel 0
RFQ
DISTI # FDV303N
Avnet Americas Power MOSFET, N Channel, 25 V, 680 mA, 450 Milliohms, SOT-23 (TO-236), 3Pins, Surface Mount - Tape and Reel (Alt: FDV303N) RoHS: Compliant Min Qty: 30000 Package Multiple: 15000 Container: Reel 0
RFQ
DISTI # FDV303N
Avnet Americas Power MOSFET, N Channel, 25 V, 680 mA, 450 Milliohms, SOT-23 (TO-236), 3Pins, Surface Mount - Tape and Reel (Alt: FDV303N) RoHS: Compliant Min Qty: 30000 Package Multiple: 15000 Container: Reel 0
  • 30,000 $0.0323
$0.0323 Buy Now
DISTI # FDV303N
Avnet Americas Power MOSFET, N Channel, 25 V, 680 mA, 450 Milliohms, SOT-23 (TO-236), 3Pins, Surface Mount - Tape and Reel (Alt: FDV303N) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 11 Weeks, 0 Days Container: Reel 0
RFQ
DISTI # FDV303N
Avnet Americas Power MOSFET, N Channel, 25 V, 680 mA, 450 Milliohms, SOT-23 (TO-236), 3Pins, Surface Mount - Tape and Reel (Alt: FDV303N) RoHS: Compliant Min Qty: 30000 Package Multiple: 15000 Container: Reel 0
RFQ
DISTI # FDV303N
Avnet Americas Power MOSFET, N Channel, 25 V, 680 mA, 450 Milliohms, SOT-23 (TO-236), 3Pins, Surface Mount - Tape and Reel (Alt: FDV303N) RoHS: Compliant Min Qty: 30000 Package Multiple: 15000 Container: Reel 0
RFQ
DISTI # FDV303N
Avnet Americas Power MOSFET, N Channel, 25 V, 680 mA, 450 Milliohms, SOT-23 (TO-236), 3Pins, Surface Mount - Tape and Reel (Alt: FDV303N) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 11 Weeks, 0 Days Container: Reel 0
RFQ
DISTI # 58K8857
Avnet Americas Power MOSFET, N Channel, 25 V, 680 mA, 450 Milliohms, SOT-23 (TO-236), 3Pins, Surface Mount - Product that comes on tape, but is not reeled (Alt: 58K8857) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 43 Weeks, 4 Days Container: Ammo Pack 0
  • 1 $0.2530
  • 25 $0.1730
  • 50 $0.1330
  • 100 $0.0910
  • 250 $0.0880
$0.0880 / $0.2530 Buy Now
DISTI # 73928842
RS Transistor, digital FET, N-channel, MOSFET, 25V, 0.68A, 0.35W, SOT-23 | ON Semiconductor FDV303N RoHS: Compliant Min Qty: 100 Package Multiple: 1 Lead time: 2 Weeks, 0 Days Container: Bulk 0
  • 100 $0.0700
  • 1,000 $0.0660
  • 2,000 $0.0640
$0.0640 / $0.0700 RFQ
Bristol Electronics   1937
RFQ
Bristol Electronics   Min Qty: 34 1480
  • 34 $0.1500
  • 101 $0.0750
  • 668 $0.0450
$0.0450 / $0.1500 Buy Now
Bristol Electronics   Min Qty: 34 1285
  • 34 $0.1500
  • 101 $0.0750
  • 668 $0.0450
$0.0450 / $0.1500 Buy Now
Bristol Electronics   155
RFQ
Rochester Electronics FDV303N - N-Channel Digital FET 25V, 0.68A, 0.45Ohm RoHS: Compliant Status: Active Min Qty: 1 27919
  • 1 $0.0514
  • 25 $0.0504
  • 100 $0.0483
  • 500 $0.0463
  • 1,000 $0.0437
$0.0437 / $0.0514 Buy Now
DISTI # FDV303N
TME Transistor: N-MOSFET, unipolar, 25V, 0.68A, 0.35W, SOT23 Min Qty: 1 9520
  • 1 $0.3079
  • 10 $0.1922
  • 50 $0.1281
  • 100 $0.1088
  • 1,500 $0.0655
  • 2,500 $0.0610
  • 3,000 $0.0596
  • 6,000 $0.0592
$0.0592 / $0.3079 Buy Now
DISTI # FDV303N
Richardson RFPD POWER MOSFET TRANSISTOR RoHS: Compliant Min Qty: 15000 0
  • 15,000 $0.0500
$0.0500 Buy Now
DISTI # FDV303N
Avnet Asia Power MOSFET, N Channel, 25 V, 680 mA, 450 Milliohms, SOT-23 (TO-236), 3Pins, Surface Mount (Alt: FDV303N) RoHS: Compliant Min Qty: 15000 Package Multiple: 15000 Lead time: 11 Weeks, 0 Days 9000
  • 15,000 $0.0485
  • 30,000 $0.0478
  • 45,000 $0.0472
  • 75,000 $0.0466
  • 150,000 $0.0455
  • 375,000 $0.0444
  • 750,000 $0.0433
$0.0433 / $0.0485 Buy Now
DISTI # FDV303N
Avnet Silica Power MOSFET N Channel 25 V 680 mA 450 Milliohms SOT23 TO236 3Pins Surface Mount (Alt: FDV303N) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 12 Weeks, 0 Days Silica - 0
Buy Now
Chip-Germany GmbH   RoHS: Not Compliant 176
RFQ
DISTI # FDV303N
EBV Elektronik Power MOSFET N Channel 25 V 680 mA 450 Milliohms SOT23 TO236 3Pins Surface Mount (Alt: FDV303N) RoHS: Compliant Min Qty: 3000 Package Multiple: 3000 Lead time: 12 Weeks, 0 Days EBV - 30000
Buy Now
Flip Electronics Stock, ship today 15000
RFQ
LCSC 25V 680mA 450m4.5V500mA 350mW 1 N-channel SOT-23 MOSFETs ROHS 8140
  • 10 $0.0542
  • 100 $0.0441
  • 300 $0.0391
  • 3,000 $0.0353
  • 6,000 $0.0322
  • 9,000 $0.0307
$0.0307 / $0.0542 Buy Now
MacroQuest Electronics ISO 9001: 2015, ISO 14001:2015, ISO 45001:2018 4338
  • 1 $0.0900
  • 10 $0.0700
  • 100 $0.0500
$0.0500 / $0.0900 Buy Now
New Advantage Corporation N-Channel 25 V 0.45 Ohm Surface Mount Digital FET - SOT-23-3 RoHS: Compliant Min Qty: 1 Package Multiple: 3000 13377000
  • 3,000 $0.0584
  • 13,377,000 $0.0545
$0.0545 / $0.0584 Buy Now

Part Details for FDV303N

FDV303N CAD Models

FDV303N Part Data Attributes

FDV303N onsemi
Buy Now Datasheet
Compare Parts:
FDV303N onsemi N-Channel Digital FET 25V, 0.68A, 0.45Ω, SOT-23 (TO-236) 2.90x1.30x1.00, 1.90P, 3000-REEL
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Active
Ihs Manufacturer ONSEMI
Part Package Code SOT-23 (TO-236) 2.90x1.30x1.00, 1.90P
Manufacturer Package Code 318
Reach Compliance Code compliant
ECCN Code EAR99
Factory Lead Time 9 Weeks
Samacsys Manufacturer onsemi
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 25 V
Drain Current-Max (ID) 0.68 A
Drain-source On Resistance-Max 0.45 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PDSO-G3
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 0.35 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for FDV303N

This table gives cross-reference parts and alternative options found for FDV303N. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FDV303N, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Manufacturer Composite Price Description Compare
FDV303N Rochester Electronics LLC Check for Price 680mA, 25V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET FDV303N vs FDV303N
FDV303N Fairchild Semiconductor Corporation Check for Price Small Signal Field-Effect Transistor, 0.68A I(D), 25V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET FDV303N vs FDV303N
Part Number Manufacturer Composite Price Description Compare
FDV303NL99Z Fairchild Semiconductor Corporation Check for Price Small Signal Field-Effect Transistor, 0.68A I(D), 25V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET FDV303N vs FDV303NL99Z
FDV303N_NL Fairchild Semiconductor Corporation Check for Price Small Signal Field-Effect Transistor, 0.68A I(D), 25V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET FDV303N vs FDV303N_NL
FDV303ND87Z Fairchild Semiconductor Corporation Check for Price Small Signal Field-Effect Transistor, 0.68A I(D), 25V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET FDV303N vs FDV303ND87Z
NVS4409NT1G onsemi $0.0806 Single N-Channel Small Signal MOSFET with ESD Protection 25V, 750mA, 350mΩ Small Signal MOSFET 25V 750mA 350 mOhm Single N-Channel SC-70 with ESD Protection, SC-70 (SOT-323) 3 LEAD, 3000-REEL, Automotive Qualified FDV303N vs NVS4409NT1G

FDV303N Related Parts

FDV303N Frequently Asked Questions (FAQ)

  • The FDV303N can operate from -40°C to 150°C, making it suitable for high-reliability applications.

  • The FDV303N requires a bias voltage of 5V to 15V, and the recommended bias current is 1mA to 10mA. Ensure the bias voltage is stable and noise-free for optimal performance.

  • Use a ground plane under the device, keep the leads as short as possible, and avoid routing high-frequency signals near the device. Also, use a bypass capacitor (e.g., 100nF) between the bias pin and ground to reduce noise.

  • Yes, the FDV303N is suitable for switching power supply applications due to its high voltage and current handling capabilities. However, ensure the device is properly biased and the PCB layout is optimized for high-frequency operation.

  • Handle the device with ESD-protective equipment, and ensure the PCB has ESD protection circuits, such as TVS diodes or ESD-protection arrays, to prevent damage from static electricity.

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