There are no models available for this part yet.
Overview of FDZ197PZ by onsemi
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 4 listings )
- Number of FFF Equivalents: ( 0 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 0 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Where used in Applications:
Space Technology
Aerospace and Defense
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Price & Stock for FDZ197PZ by onsemi
| Part # | Manufacturer | Description | Stock | Price | Buy | ||
|---|---|---|---|---|---|---|---|
|
DISTI #
73AK1034
|
Newark | Fdz197Pz, Single Mosfets |Onsemi FDZ197PZ RoHS: Not Compliant Min Qty: 1460 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
|
$0.2250 / $0.2860 | Buy Now | |
|
DISTI #
2156-FDZ197PZ-488-ND
|
DigiKey | SMALL SIGNAL FIELD-EFFECT TRANSI Min Qty: 1211 Lead time: 1 Weeks Container: Bulk MARKETPLACE PRODUCT |
275000 In Stock |
|
$0.2500 | Buy Now | |
|
DISTI #
FDZ197PZ
|
Avnet Americas | Trans MOSFET P-CH 20V 3.8A 6-Pin WLCSP T/R - Tape and Reel (Alt: FDZ197PZ) RoHS: Compliant Min Qty: 1457 Package Multiple: 1 Lead time: 4 Weeks, 0 Days Container: Reel | 275000 Partner Stock |
|
$0.2128 / $0.2540 | Buy Now | |
| Rochester Electronics | Small Signal Field-Effect Transistor, 3.8A, 20V, P-Channel, MOSFET ' RoHS: Compliant Status: Obsolete Min Qty: 1 | 275000 |
|
$0.2128 / $0.2503 | Buy Now |
CAD Models for FDZ197PZ by onsemi
Part Data Attributes for FDZ197PZ by onsemi
|
|
|
|---|---|
|
Pbfree Code
|
Yes
|
|
Part Life Cycle Code
|
Obsolete
|
|
Ihs Manufacturer
|
ONSEMI
|
|
Package Description
|
1.50 X 1 MM, ROHS COMPLIANT, ULTRA THIN, WL-CSP-6
|
|
Manufacturer Package Code
|
567PW
|
|
Reach Compliance Code
|
compliant
|
|
ECCN Code
|
EAR99
|
|
Factory Lead Time
|
4 Weeks
|
|
Samacsys Manufacturer
|
onsemi
|
|
Configuration
|
SINGLE WITH BUILT-IN DIODE
|
|
DS Breakdown Voltage-Min
|
20 V
|
|
Drain Current-Max (ID)
|
3.8 A
|
|
Drain-source On Resistance-Max
|
0.071 Ω
|
|
FET Technology
|
METAL-OXIDE SEMICONDUCTOR
|
|
Feedback Cap-Max (Crss)
|
225 pF
|
|
JESD-30 Code
|
R-PBGA-B6
|
|
JESD-609 Code
|
e1
|
|
Moisture Sensitivity Level
|
1
|
|
Number of Elements
|
1
|
|
Number of Terminals
|
6
|
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Operating Mode
|
ENHANCEMENT MODE
|
|
Operating Temperature-Max
|
150 °C
|
|
Package Body Material
|
PLASTIC/EPOXY
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|
Package Shape
|
RECTANGULAR
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Package Style
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GRID ARRAY
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|
Peak Reflow Temperature (Cel)
|
260
|
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Polarity/Channel Type
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P-CHANNEL
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|
Power Dissipation-Max (Abs)
|
1.9 W
|
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Qualification Status
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Not Qualified
|
|
Surface Mount
|
YES
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Terminal Finish
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Tin/Silver/Copper (Sn/Ag/Cu)
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Terminal Form
|
BALL
|
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Terminal Position
|
BOTTOM
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Time@Peak Reflow Temperature-Max (s)
|
30
|
|
Transistor Application
|
SWITCHING
|
|
Transistor Element Material
|
SILICON
|
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