Part Details for FF75R12YT3BOMA1 by Infineon Technologies AG
Overview of FF75R12YT3BOMA1 by Infineon Technologies AG
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for FF75R12YT3BOMA1
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
FF75R12YT3BOMA1
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Avnet Americas | LOW POWER EASY - Trays (Alt: FF75R12YT3BOMA1) RoHS: Compliant Min Qty: 20 Package Multiple: 20 Container: Tray | 0 |
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RFQ | |
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Rochester Electronics | FF75R12 - IGBT Module RoHS: Compliant Status: Not Recommended for New Designs Min Qty: 1 | 1 |
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$25.1000 / $29.5200 | Buy Now |
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DISTI #
FF75R12YT3BOMA1
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Avnet Americas | LOW POWER EASY - Trays (Alt: FF75R12YT3BOMA1) RoHS: Compliant Min Qty: 20 Package Multiple: 20 Container: Tray | 0 |
|
RFQ | |
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DISTI #
FF75R12YT3BOMA1
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Avnet Americas | LOW POWER EASY - Trays (Alt: FF75R12YT3BOMA1) RoHS: Compliant Min Qty: 20 Package Multiple: 20 Container: Tray | 0 |
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RFQ |
Part Details for FF75R12YT3BOMA1
FF75R12YT3BOMA1 CAD Models
FF75R12YT3BOMA1 Part Data Attributes
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FF75R12YT3BOMA1
Infineon Technologies AG
Buy Now
Datasheet
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Compare Parts:
FF75R12YT3BOMA1
Infineon Technologies AG
Insulated Gate Bipolar Transistor, MODULE-24
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| Pbfree Code | No | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Not Recommended | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Part Package Code | MODULE | |
| Package Description | MODULE-9 | |
| Pin Count | 24 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Case Connection | ISOLATED | |
| Collector Current-Max (IC) | 100 A | |
| Collector-Emitter Voltage-Max | 1200 V | |
| Configuration | SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE AND THERMISTOR | |
| JESD-30 Code | R-XUFM-X9 | |
| Number of Elements | 2 | |
| Number of Terminals | 9 | |
| Operating Temperature-Max | 125 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Form | UNSPECIFIED | |
| Terminal Position | UPPER | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | POWER CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 710 ns | |
| Turn-on Time-Nom (ton) | 108 ns |
Alternate Parts for FF75R12YT3BOMA1
This table gives cross-reference parts and alternative options found for FF75R12YT3BOMA1. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FF75R12YT3BOMA1, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| APTGT75A120TG | Insulated Gate Bipolar Transistor, 100A I(C), 1200V V(BR)CES, N-Channel, ROHS COMPLIANT, SP4, 12 PIN | Microsemi Corporation | FF75R12YT3BOMA1 vs APTGT75A120TG |
| APTGT75A120T | Insulated Gate Bipolar Transistor, 110A I(C), 1200V V(BR)CES, N-Channel, MODULE-12 | Microsemi Corporation | FF75R12YT3BOMA1 vs APTGT75A120T |
| APTGT75A120T1G | Insulated Gate Bipolar Transistor, 110A I(C), 1200V V(BR)CES, N-Channel | Microchip Technology Inc | FF75R12YT3BOMA1 vs APTGT75A120T1G |