Part Details for FHX06X by SUMITOMO ELECTRIC Device Innovations Inc
Overview of FHX06X by SUMITOMO ELECTRIC Device Innovations Inc
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Applications
Healthcare
Part Details for FHX06X
FHX06X CAD Models
FHX06X Part Data Attributes
|
|
FHX06X
SUMITOMO ELECTRIC Device Innovations Inc
Buy Now
Datasheet
|
Compare Parts:
FHX06X
SUMITOMO ELECTRIC Device Innovations Inc
RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, DIE
|
| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Transferred | |
| Ihs Manufacturer | EUDYNA DEVICES INC | |
| Part Package Code | DIE | |
| Package Description | UNCASED CHIP, R-XUUC-N | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Additional Feature | LOW NOISE, HIGH RELIABILITY | |
| Configuration | SINGLE | |
| DS Breakdown Voltage-Min | 3.5 V | |
| FET Technology | HIGH ELECTRON MOBILITY | |
| Highest Frequency Band | KU BAND | |
| JESD-30 Code | R-XUUC-N | |
| Number of Elements | 1 | |
| Operating Mode | DEPLETION MODE | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | UNCASED CHIP | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Gain-Min (Gp) | 9.5 dB | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Form | NO LEAD | |
| Terminal Position | UPPER | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | AMPLIFIER | |
| Transistor Element Material | GALLIUM ARSENIDE |
Alternate Parts for FHX06X
This table gives cross-reference parts and alternative options found for FHX06X. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FHX06X, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| FHX05X | RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, DIE | FUJITSU Limited | FHX06X vs FHX05X |
| NE76100M | RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, DIE-5 | NEC Electronics America Inc | FHX06X vs NE76100M |
| NE38018 | RF Small Signal Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Hetero-junction FET, | NEC Electronics America Inc | FHX06X vs NE38018 |
| NE32500 | RF Small Signal Field-Effect Transistor, 1-Element, KA Band, Gallium Arsenide, N-Channel, Hetero-junction FET, DIE-4 | NEC Electronics America Inc | FHX06X vs NE32500 |
| NE38018T2-A | S BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HFET | Renesas Electronics Corporation | FHX06X vs NE38018T2-A |
| NE76000 | RF Small Signal Field-Effect Transistor, 2-Element, KU Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, DIE-6 | NEC Electronics America Inc | FHX06X vs NE76000 |
| NE33200M | RF Small Signal Field-Effect Transistor, 1-Element, X Band, Silicon, N-Channel, Hetero-junction FET, DIE-4 | California Eastern Laboratories (CEL) | FHX06X vs NE33200M |
| NE32400 | RF Small Signal Field-Effect Transistor, KA Band, Silicon, N-Channel, Hetero-junction FET, DIE-6 | NEC Electronics Group | FHX06X vs NE32400 |
| NE33200N | RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Hetero-junction FET | NEC Electronics Group | FHX06X vs NE33200N |
| NE76100P | RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET | California Eastern Laboratories (CEL) | FHX06X vs NE76100P |