Part Details for FHX35LG by FUJITSU Limited
Overview of FHX35LG by FUJITSU Limited
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for FHX35LG
FHX35LG CAD Models
FHX35LG Part Data Attributes
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FHX35LG
FUJITSU Limited
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Datasheet
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FHX35LG
FUJITSU Limited
RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, HERMETIC SEALED, METAL CERAMIC, CASE LG, 4 PIN
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| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | FUJITSU LTD | |
| Package Description | DISK BUTTON, O-CRDB-F4 | |
| Pin Count | 4 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| HTS Code | 8541.21.00.95 | |
| Samacsys Manufacturer | FUJITSU | |
| Additional Feature | HIGH RELIABILITY | |
| Case Connection | SOURCE | |
| Configuration | SINGLE | |
| DS Breakdown Voltage-Min | 4 V | |
| FET Technology | HIGH ELECTRON MOBILITY | |
| Highest Frequency Band | KU BAND | |
| JESD-30 Code | O-CRDB-F4 | |
| Number of Elements | 1 | |
| Number of Terminals | 4 | |
| Operating Mode | DEPLETION MODE | |
| Operating Temperature-Max | 175 °C | |
| Package Body Material | CERAMIC, METAL-SEALED COFIRED | |
| Package Shape | ROUND | |
| Package Style | DISK BUTTON | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation Ambient-Max | 0.29 W | |
| Power Gain-Min (Gp) | 8.5 dB | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Form | FLAT | |
| Terminal Position | RADIAL | |
| Transistor Application | AMPLIFIER | |
| Transistor Element Material | GALLIUM ARSENIDE |
Alternate Parts for FHX35LG
This table gives cross-reference parts and alternative options found for FHX35LG. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FHX35LG, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| NE72218-T2-57 | RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET | NEC Electronics Group | FHX35LG vs NE72218-T2-57 |
| NE72218-58 | RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET | NEC Electronics Group | FHX35LG vs NE72218-58 |
| NE76118 | RF Small Signal Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, PLASTIC, SUPERMINI-4 | NEC Compound Semiconductor Devices Ltd | FHX35LG vs NE76118 |
| FHX14LG | RF Small Signal Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, HERMETIC SEALED, METAL CERAMIC, CASE LG, 4 PIN | FUJITSU Limited | FHX35LG vs FHX14LG |
| NE76038-T1A | RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, PLASTIC PACKAGE-4 | NEC Electronics Group | FHX35LG vs NE76038-T1A |
| CFH120-10 | RF Small Signal Field-Effect Transistor, 1-Element, K Band, Gallium Arsenide, N-Channel, High Electron Mobility FET, PLASTIC, MW-4, 4 PIN | Infineon Technologies AG | FHX35LG vs CFH120-10 |
| NE76118-TI | RF Small Signal Field-Effect Transistor, 1-Element, S Band, Gallium Arsenide, N-Channel, Metal Semiconductor FET, | NEC Compound Semiconductor Devices Ltd | FHX35LG vs NE76118-TI |
| CFH120-08 | RF Small Signal Field-Effect Transistor, 1-Element, K Band, Silicon, N-Channel, High Electron Mobility FET, PLASTIC, MW-4, 4 PIN | TriQuint Semiconductor | FHX35LG vs CFH120-08 |
| NE425S01 | KU BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HFET | Renesas Electronics Corporation | FHX35LG vs NE425S01 |
| CFY30 | RF Small Signal Field-Effect Transistor, 1-Element, X Band, Gallium Arsenide, N-Channel, Junction FET | TriQuint Semiconductor | FHX35LG vs CFY30 |