Transistors RF Power Field-Effect Transistors FLC107WG

FLC107WG by

Description: RF Power Field-Effect Transistor, 1-Element, C Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, CASE WG, 4 PIN

Overview of FLC107WG by FUJITSU Limited

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Where used in Applications: Education and Research Industrial Automation Electronic Manufacturing

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Show differences only	FLC107WG FUJITSU Limited Buy Now	part-to-be-compared FUJITSU Limited Buy Now
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Part Life Cycle Code	Obsolete
Ihs Manufacturer	FUJITSU LTD
Package Description	HERMETIC SEALED, METAL CERAMIC, CASE WG, 4 PIN
Pin Count	2
Reach Compliance Code	compliant
ECCN Code	EAR99
HTS Code	8541.29.00.75
Additional Feature	HIGH RELIABILITY
Case Connection	SOURCE
Configuration	SINGLE
DS Breakdown Voltage-Min	15 V
Drain Current-Max (ID)	0.6 A
FET Technology	JUNCTION
Highest Frequency Band	C BAND
JESD-30 Code	R-CDFM-F2
Number of Elements	1
Number of Terminals	2
Operating Mode	DEPLETION MODE
Operating Temperature-Max	175 °C
Package Body Material	CERAMIC, METAL-SEALED COFIRED
Package Shape	RECTANGULAR
Package Style	FLANGE MOUNT
Polarity/Channel Type	N-CHANNEL
Power Dissipation Ambient-Max	7.5 W
Qualification Status	Not Qualified
Surface Mount	YES
Terminal Form	FLAT
Terminal Position	DUAL
Transistor Element Material	GALLIUM ARSENIDE

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