Part Details for FLM1213-4F by SUMITOMO ELECTRIC Device Innovations Inc
Overview of FLM1213-4F by SUMITOMO ELECTRIC Device Innovations Inc
- Distributor Offerings: (1 listing)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Security and Surveillance
Industrial Automation
Audio and Video Systems
Transportation and Logistics
Renewable Energy
Automotive
Robotics and Drones
Price & Stock for FLM1213-4F
Part # | Distributor | Description | Stock | Price | Buy | |
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Bristol Electronics | 15 |
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RFQ |
Part Details for FLM1213-4F
FLM1213-4F CAD Models
FLM1213-4F Part Data Attributes:
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FLM1213-4F
SUMITOMO ELECTRIC Device Innovations Inc
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Datasheet
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FLM1213-4F
SUMITOMO ELECTRIC Device Innovations Inc
RF Power Field-Effect Transistor, 1-Element, KU Band, Gallium Arsenide, N-Channel, Junction FET, HERMETIC SEALED, METAL CERAMIC, CASE IA, 2 PIN
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Transferred | |
Ihs Manufacturer | EUDYNA DEVICES INC | |
Package Description | FLANGE MOUNT, R-CDFM-F2 | |
Pin Count | 2 | |
Manufacturer Package Code | CASE IA | |
Reach Compliance Code | unknown | |
ECCN Code | EAR99 | |
Additional Feature | HIGH RELIABILITY | |
Case Connection | SOURCE | |
Configuration | SINGLE | |
DS Breakdown Voltage-Min | 15 V | |
Drain Current-Max (ID) | 1.3 A | |
FET Technology | JUNCTION | |
Highest Frequency Band | KU BAND | |
JESD-30 Code | R-CDFM-F2 | |
Number of Elements | 1 | |
Number of Terminals | 2 | |
Operating Mode | DEPLETION MODE | |
Package Body Material | CERAMIC, METAL-SEALED COFIRED | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
Polarity/Channel Type | N-CHANNEL | |
Qualification Status | Not Qualified | |
Surface Mount | YES | |
Terminal Form | FLAT | |
Terminal Position | DUAL | |
Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
Transistor Application | AMPLIFIER | |
Transistor Element Material | GALLIUM ARSENIDE |