Part Details for FM6L52020L by Panasonic Electronic Components
Overview of FM6L52020L by Panasonic Electronic Components
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (0 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (0 crosses)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Price & Stock for FM6L52020L
| Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
31X2969
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Newark | Sc, Nch Power Mos Fet |Panasonic FM6L52020L Min Qty: 10000 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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Buy Now | |
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Chip1Cloud | MOSFET N-CH 20V 2.2A MINI6-F1 | 6000 |
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RFQ |
Part Details for FM6L52020L
FM6L52020L CAD Models
FM6L52020L Part Data Attributes:
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FM6L52020L
Panasonic Electronic Components
Buy Now
Datasheet
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Compare Parts:
FM6L52020L
Panasonic Electronic Components
Small Signal Field-Effect Transistor, 2.2A I(D), 20V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, HALOGEN FREE AND ROHS COMPLIANT, WSSMINI6-F1, 6 PIN
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| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | PANASONIC CORP | |
| Package Description | HALOGEN FREE AND ROHS COMPLIANT, WSSMINI6-F1, 6 PIN | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Panasonic | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 20 V | |
| Drain Current-Max (ID) | 2.2 A | |
| Drain-source On Resistance-Max | 0.105 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PDSO-F6 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 6 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 125 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 0.54 W | |
| Surface Mount | YES | |
| Terminal Form | FLAT | |
| Terminal Position | DUAL | |
| Time@Peak Reflow Temperature-Max (s) | 10 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |