There are no models available for this part yet.
Overview of FMG2G300US60E by Fairchild Semiconductor Corporation
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 2 listings )
- Number of FFF Equivalents: ( 0 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 10 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Where used in Applications:
Internet of Things (IoT)
Environmental Monitoring
Financial Technology (Fintech)
Smart Cities
Transportation and Logistics
Agriculture Technology
Telecommunications
Virtual Reality (VR), Augmented Reality (AR), and Vision Systems
Automotive
Consumer Electronics
Education and Research
Security and Surveillance
Audio and Video Systems
Computing and Data Storage
Healthcare
Renewable Energy
Entertainment and Gaming
Robotics and Drones
Price & Stock for FMG2G300US60E by Fairchild Semiconductor Corporation
| Part # | Manufacturer | Description | Stock | Price | Buy | ||
|---|---|---|---|---|---|---|---|
| Quest Components | INSULATED GATE BIPOLAR TRANSISTOR, 300A I(C), 600V V(BR)CES, N-CHANNEL | 2 |
|
$32.5163 | Buy Now | ||
| Rochester Electronics | Insulated Gate Bipolar Transistor, 300A, 600V, N-Channel ' RoHS: Compliant Status: Obsolete Min Qty: 1 | 2 |
|
$33.3500 / $39.2400 | Buy Now |
CAD Models for FMG2G300US60E by Fairchild Semiconductor Corporation
Part Data Attributes for FMG2G300US60E by Fairchild Semiconductor Corporation
|
|
|
|---|---|
|
Rohs Code
|
Yes
|
|
Part Life Cycle Code
|
Obsolete
|
|
Ihs Manufacturer
|
FAIRCHILD SEMICONDUCTOR CORP
|
|
Package Description
|
PLASTIC, 7PM-HA, 7 PIN
|
|
Pin Count
|
7
|
|
Reach Compliance Code
|
compliant
|
|
ECCN Code
|
EAR99
|
|
Case Connection
|
ISOLATED
|
|
Collector Current-Max (IC)
|
300 A
|
|
Collector-Emitter Voltage-Max
|
600 V
|
|
Configuration
|
SERIES CONNECTED, CENTER TAP, 2 ELEMENTS WITH BUILT-IN DIODE
|
|
Gate-Emitter Voltage-Max
|
20 V
|
|
JESD-30 Code
|
R-PUFM-X7
|
|
JESD-609 Code
|
e3
|
|
Number of Elements
|
2
|
|
Number of Terminals
|
7
|
|
Operating Temperature-Max
|
150 °C
|
|
Package Body Material
|
PLASTIC/EPOXY
|
|
Package Shape
|
RECTANGULAR
|
|
Package Style
|
FLANGE MOUNT
|
|
Polarity/Channel Type
|
N-CHANNEL
|
|
Power Dissipation-Max (Abs)
|
892 W
|
|
Qualification Status
|
Not Qualified
|
|
Reference Standard
|
UL RECOGNIZED
|
|
Surface Mount
|
NO
|
|
Terminal Finish
|
TIN
|
|
Terminal Form
|
UNSPECIFIED
|
|
Terminal Position
|
UPPER
|
|
Transistor Application
|
MOTOR CONTROL
|
|
Transistor Element Material
|
SILICON
|
|
Turn-off Time-Nom (toff)
|
480 ns
|
|
Turn-on Time-Nom (ton)
|
470 ns
|
|
VCEsat-Max
|
2.7 V
|
Alternate Parts for FMG2G300US60E
This table gives cross-reference parts and alternative options found for FMG2G300US60E. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FMG2G300US60E, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| MG300J2YS11 | TRANSISTOR 300 A, 600 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor | Toshiba America Electronic Components | FMG2G300US60E vs MG300J2YS11 |
| MG400J2YS50 | TRANSISTOR 400 A, 600 V, N-CHANNEL IGBT, 2-109D1A, 8 PIN, Insulated Gate BIP Transistor | Toshiba America Electronic Components | FMG2G300US60E vs MG400J2YS50 |
| BSM400GB60DN2 | Insulated Gate Bipolar Transistor, 475A I(C), 600V V(BR)CES, N-Channel, | Eupec Gmbh & Co Kg | FMG2G300US60E vs BSM400GB60DN2 |
| 2MBI150NC-060 | Insulated Gate Bipolar Transistor, 150A I(C), 600V V(BR)CES, N-Channel, MODULE-7 | Fuji Electric Co Ltd | FMG2G300US60E vs 2MBI150NC-060 |
| 1MBI600NN-060 | Insulated Gate Bipolar Transistor, 600A I(C), 600V V(BR)CES, N-Channel, MODULE-4 | Fuji Electric Co Ltd | FMG2G300US60E vs 1MBI600NN-060 |
| MG300J1US1 | TRANSISTOR 300 A, 600 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor | Toshiba America Electronic Components | FMG2G300US60E vs MG300J1US1 |
| CM100DY-12H | Insulated Gate Bipolar Transistor, 100A I(C), 600V V(BR)CES, N-Channel, | Mitsubishi Electric | FMG2G300US60E vs CM100DY-12H |
| CM400DY-12H | Insulated Gate Bipolar Transistor, 400A I(C), 600V V(BR)CES, N-Channel, | Mitsubishi Electric | FMG2G300US60E vs CM400DY-12H |
| MG100J2YS91 | TRANSISTOR 100 A, 600 V, N-CHANNEL IGBT, Insulated Gate BIP Transistor | Toshiba America Electronic Components | FMG2G300US60E vs MG100J2YS91 |
| BSM300GB60DLCHOSA1 | Insulated Gate Bipolar Transistor, 375A I(C), 600V V(BR)CES, N-Channel, MODULE-7 | Infineon Technologies AG | FMG2G300US60E vs BSM300GB60DLCHOSA1 |