Part Details for FMW47N60S1HF by Fuji Electric Co Ltd
Overview of FMW47N60S1HF by Fuji Electric Co Ltd
- Distributor Offerings:
- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
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Applications
Industrial Automation
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Price & Stock for FMW47N60S1HF
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
49X9279
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Newark | Mosfet, N Channel, 600V, 47A, To-247-3, Channel Type:N Channel, Drain Source Voltage Vds:600V, Continuous Drain Current Id:47A, Transistor Mounting:Through Hole, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:3V, Msl:- Rohs Compliant: Yes |Fuji Electric FMW47N60S1HF Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
|
Buy Now | |
|
DISTI #
2414398
|
element14 Asia-Pacific | RoHS: Compliant Min Qty: 1 Container: Each | 0 |
|
$12.4688 / $14.0026 | Buy Now |
|
DISTI #
2414398
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Farnell | RoHS: Compliant Min Qty: 1 Container: Each | 0 |
|
$9.2254 / $9.6298 | Buy Now |
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|
Sense Electronic Company Limited | TO-247 | 1200 |
|
RFQ |
Part Details for FMW47N60S1HF
FMW47N60S1HF CAD Models
FMW47N60S1HF Part Data Attributes
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FMW47N60S1HF
Fuji Electric Co Ltd
Buy Now
Datasheet
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Compare Parts:
FMW47N60S1HF
Fuji Electric Co Ltd
Power Field-Effect Transistor,
|
| Rohs Code | Yes | |
| Part Life Cycle Code | Obsolete | |
| Ihs Manufacturer | FUJI ELECTRIC CO LTD | |
| Package Description | FLANGE MOUNT, R-PSFM-T3 | |
| Reach Compliance Code | unknown | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | FUJI ELECTRIC | |
| Avalanche Energy Rating (Eas) | 1267.4 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 600 V | |
| Drain Current-Max (ID) | 47 A | |
| Drain-source On Resistance-Max | 0.07 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-247 | |
| JESD-30 Code | R-PSFM-T3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 141 A | |
| Surface Mount | NO | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for FMW47N60S1HF
This table gives cross-reference parts and alternative options found for FMW47N60S1HF. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FMW47N60S1HF, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| SIHG44N65EF-GE3 | Power Field-Effect Transistor, 46A I(D), 650V, 0.073ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 | Vishay Intertechnologies | FMW47N60S1HF vs SIHG44N65EF-GE3 |
| SIHW47N60EF-GE3 | Power Field-Effect Transistor, 47A I(D), 600V, 0.067ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 | Vishay Intertechnologies | FMW47N60S1HF vs SIHW47N60EF-GE3 |
| R6047KNZ4C13 | Power Field-Effect Transistor, | ROHM Semiconductor | FMW47N60S1HF vs R6047KNZ4C13 |
| R6047ENZ4C13 | Power Field-Effect Transistor, | ROHM Semiconductor | FMW47N60S1HF vs R6047ENZ4C13 |
| SPW47N60C3FKSA1 | Power Field-Effect Transistor, 47A I(D), 600V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC, GREEN, PLASTIC, TO-247, 3 PIN | Infineon Technologies AG | FMW47N60S1HF vs SPW47N60C3FKSA1 |
| STW54NM65ND | N-channel 650 V, 0.055 Ohm typ., 49 A FDmesh(TM) II Power MOSFET (with fast diode) in a TO-247 package | STMicroelectronics | FMW47N60S1HF vs STW54NM65ND |
| STW54NM65N | 50A, 650V, 0.065ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247, ROHS COMPLIANT PACKAGE-3 | STMicroelectronics | FMW47N60S1HF vs STW54NM65N |
| SPW47N65C3FKSA1 | Power Field-Effect Transistor, 47A I(D), 650V, 0.07ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, ROHS COMPLIANT, TO-247, 3 PIN | Infineon Technologies AG | FMW47N60S1HF vs SPW47N65C3FKSA1 |
| SIHW47N65E-GE3 | Power Field-Effect Transistor, 47A I(D), 650V, 0.072ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AD, HALOGEN FREE AND ROHS COMPLIANT PACKAGE-3 | Vishay Intertechnologies | FMW47N60S1HF vs SIHW47N65E-GE3 |