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Part Details for FQA38N30 by onsemi
Overview of FQA38N30 by onsemi
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Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Price & Stock for FQA38N30
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
FQA38N30
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Avnet Americas | Trans MOSFET N-CH 300V 38.4A 3-Pin(3+Tab) TO-3P(N) Rail - Rail/Tube (Alt: FQA38N30) RoHS: Compliant Min Qty: 191 Package Multiple: 1 Lead time: 0 Weeks, 2 Days Container: Tube | 425 Partner Stock |
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$3.2488 / $3.8776 | Buy Now |
|
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Rochester Electronics | FQA38N30 - N-Channel QFETMOSFET 300 V, 38.4 A, 85 m RoHS: Compliant Status: End of Life / Last Time Buy Min Qty: 1 | 6750 |
|
$3.5000 / $4.1200 | Buy Now |
|
DISTI #
FQA38N30
|
Avnet Americas | Trans MOSFET N-CH 300V 38.4A 3-Pin(3+Tab) TO-3P(N) Rail - Rail/Tube (Alt: FQA38N30) RoHS: Compliant Min Qty: 191 Package Multiple: 1 Lead time: 0 Weeks, 2 Days Container: Tube | 425 Partner Stock |
|
$3.2488 / $3.8776 | Buy Now |
|
DISTI #
FQA38N30
|
Avnet Americas | Trans MOSFET N-CH 300V 38.4A 3-Pin(3+Tab) TO-3P(N) Rail - Rail/Tube (Alt: FQA38N30) RoHS: Compliant Min Qty: 191 Package Multiple: 1 Lead time: 0 Weeks, 2 Days Container: Tube | 425 Partner Stock |
|
$3.2488 / $3.8776 | Buy Now |
|
|
Flip Electronics | Stock, ship today | 425 |
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$2.6200 | RFQ |
Part Details for FQA38N30
FQA38N30 CAD Models
FQA38N30 Part Data Attributes
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FQA38N30
onsemi
Buy Now
Datasheet
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Compare Parts:
FQA38N30
onsemi
N-Channel QFET® MOSFET 300 V, 38.4 A, 85 mΩ, 450-TUBE
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| Pbfree Code | Yes | |
| Part Life Cycle Code | End Of Life | |
| Ihs Manufacturer | ONSEMI | |
| Package Description | TO-3P, 3 PIN | |
| Manufacturer Package Code | 340BZ | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 4 Weeks | |
| Samacsys Manufacturer | onsemi | |
| Avalanche Energy Rating (Eas) | 1500 mJ | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 300 V | |
| Drain Current-Max (ID) | 38.4 A | |
| Drain-source On Resistance-Max | 0.085 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JESD-30 Code | R-PSFM-T3 | |
| JESD-609 Code | e3 | |
| Number of Elements | 1 | |
| Number of Terminals | 3 | |
| Operating Mode | ENHANCEMENT MODE | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Pulsed Drain Current-Max (IDM) | 153.6 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Finish | Matte Tin (Sn) - annealed | |
| Terminal Form | THROUGH-HOLE | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |