Part Details for FQD12N20LTM by onsemi
Overview of FQD12N20LTM by onsemi
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- Number of FFF Equivalents:
- CAD Models:
- Number of Functional Equivalents:
- Part Data Attributes
- Reference Designs:
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Applications
Education and Research
Industrial Automation
Electronic Manufacturing
Price & Stock for FQD12N20LTM
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
06R2503
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Newark | N Channel Mosfet, 200V, 9A, D-Pak, Channel Type:N Channel, Drain Source Voltage Vds:200V, Continuous Drain Current Id:9A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:2V Rohs Compliant: Yes |Onsemi FQD12N20LTM Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 2500 |
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$0.4800 / $0.9300 | Buy Now |
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DISTI #
31Y1521
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Newark | Mosfet Transistor, N Channel, 9 A, 200 V, 0.22 Ohm, 10 V, 2 V Rohs Compliant: Yes |Onsemi FQD12N20LTM Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape | 1225 |
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$0.5150 / $0.9640 | Buy Now |
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DISTI #
82C4012
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Newark | N Channel Mosfet, 200V, 9A, D-Pak, Full Reel, Channel Type:N Channel, Drain Source Voltage Vds:200V, Continuous Drain Current Id:9A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:2V Rohs Compliant: Yes |Onsemi FQD12N20LTM Min Qty: 2500 Package Multiple: 1 Date Code: 0 Container: Reel | 0 |
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$0.2980 / $0.3970 | Buy Now |
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DISTI #
FQD12N20LTMCT-ND
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DigiKey | MOSFET N-CH 200V 9A DPAK Min Qty: 1 Lead time: 26 Weeks Container: Digi-Reel®, Cut Tape (CT), Tape & Reel (TR) |
2278 In Stock |
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$0.2880 / $0.8700 | Buy Now |
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DISTI #
FQD12N20LTM
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Avnet Americas | Trans MOSFET N-CH 200V 9A 3-Pin(2+Tab) DPAK T/R - Tape and Reel (Alt: FQD12N20LTM) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 26 Weeks, 0 Days Container: Reel | 0 |
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$0.3087 / $0.3456 | Buy Now |
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DISTI #
FQD12N20LTM
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Avnet Americas | Trans MOSFET N-CH 200V 9A 3-Pin(2+Tab) DPAK T/R - Tape and Reel (Alt: FQD12N20LTM) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 26 Weeks, 0 Days Container: Reel | 0 |
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$0.3087 / $0.3456 | Buy Now |
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DISTI #
512-FQD12N20LTM
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Mouser Electronics | MOSFET 200V N-Ch QFET Logic Level RoHS: Compliant | 58009 |
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$0.3300 / $0.8600 | Buy Now |
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Future Electronics | Single N-Channel 200 V 0.32 Ohm 21 nC 2.5 W DMOS SMT Mosfet - TO-252-3 RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Container: Reel | 55000Reel |
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$0.2850 / $0.3050 | Buy Now |
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Future Electronics | Single N-Channel 200 V 0.32 Ohm 21 nC 2.5 W DMOS SMT Mosfet - TO-252-3 RoHS: Compliant pbFree: Yes Min Qty: 2500 Package Multiple: 2500 Container: Reel | 0Reel |
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$0.2850 / $0.3050 | Buy Now |
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Future Electronics | Single N-Channel 200 V 0.32 Ohm 21 nC 2.5 W DMOS SMT Mosfet - TO-252-3 RoHS: Compliant pbFree: Yes Min Qty: 1 Package Multiple: 2500 Container: Cut Tape/Mini-Reel | 0Cut Tape/Mini-Reel |
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$0.2850 / $0.3850 | Buy Now |
Part Details for FQD12N20LTM
FQD12N20LTM CAD Models
FQD12N20LTM Part Data Attributes
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FQD12N20LTM
onsemi
Buy Now
Datasheet
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Compare Parts:
FQD12N20LTM
onsemi
Power MOSFET, N-Channel, Logic Level, QFET®, 200 V, 9.0 A, 280 mΩ, DPAK, 2500-REEL
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| Pbfree Code | Yes | |
| Part Life Cycle Code | Active | |
| Ihs Manufacturer | ONSEMI | |
| Package Description | DPAK-3 | |
| Manufacturer Package Code | 369AS | |
| Reach Compliance Code | not_compliant | |
| ECCN Code | EAR99 | |
| Factory Lead Time | 17 Weeks, 3 Days | |
| Samacsys Manufacturer | onsemi | |
| Avalanche Energy Rating (Eas) | 210 mJ | |
| Case Connection | DRAIN | |
| Configuration | SINGLE WITH BUILT-IN DIODE | |
| DS Breakdown Voltage-Min | 200 V | |
| Drain Current-Max (ID) | 9 A | |
| Drain-source On Resistance-Max | 0.32 Ω | |
| FET Technology | METAL-OXIDE SEMICONDUCTOR | |
| JEDEC-95 Code | TO-252 | |
| JESD-30 Code | R-PSSO-G2 | |
| JESD-609 Code | e3 | |
| Moisture Sensitivity Level | 1 | |
| Number of Elements | 1 | |
| Number of Terminals | 2 | |
| Operating Mode | ENHANCEMENT MODE | |
| Operating Temperature-Max | 150 °C | |
| Operating Temperature-Min | -55 °C | |
| Package Body Material | PLASTIC/EPOXY | |
| Package Shape | RECTANGULAR | |
| Package Style | SMALL OUTLINE | |
| Peak Reflow Temperature (Cel) | 260 | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 55 W | |
| Pulsed Drain Current-Max (IDM) | 36 A | |
| Qualification Status | Not Qualified | |
| Surface Mount | YES | |
| Terminal Finish | MATTE TIN | |
| Terminal Form | GULL WING | |
| Terminal Position | SINGLE | |
| Time@Peak Reflow Temperature-Max (s) | 30 | |
| Transistor Application | SWITCHING | |
| Transistor Element Material | SILICON |
Alternate Parts for FQD12N20LTM
This table gives cross-reference parts and alternative options found for FQD12N20LTM. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FQD12N20LTM, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| FQD12N20TM | Power MOSFET, N-Channel, QFET®, 200 V, 9.0 A, 280 mΩ, DPAK, 2500-REEL | onsemi | FQD12N20LTM vs FQD12N20TM |
| FQD10N20LTM | Power MOSFET, N-Channel, Logic Level, QFET®, 200 V, 7.6 A, 380 mΩ, DPAK, 2500-REEL | onsemi | FQD12N20LTM vs FQD10N20LTM |
| FQD10N20LTF | Power Field-Effect Transistor, 7.6A I(D), 200V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 | Fairchild Semiconductor Corporation | FQD12N20LTM vs FQD10N20LTF |
| FQD12N20LTM_NL | Power Field-Effect Transistor, 9A I(D), 200V, 0.32ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, LEAD FREE, DPAK-3 | Fairchild Semiconductor Corporation | FQD12N20LTM vs FQD12N20LTM_NL |
| FQD12N20TF | Power Field-Effect Transistor, 9A I(D), 200V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 | Fairchild Semiconductor Corporation | FQD12N20LTM vs FQD12N20TF |
| FQD12N20LTF | Power Field-Effect Transistor, 9A I(D), 200V, 0.32ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 | Fairchild Semiconductor Corporation | FQD12N20LTM vs FQD12N20LTF |
| FQD10N20L | Power Field-Effect Transistor, 7.6A I(D), 200V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252 | onsemi | FQD12N20LTM vs FQD10N20L |
| FQD12N20L | Power Field-Effect Transistor, 9A I(D), 200V, 0.32ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 | Fairchild Semiconductor Corporation | FQD12N20LTM vs FQD12N20L |