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Transistors / Power Field-Effect Transistors / FQD12N20LTM
Datasheets
FQD12N20LTM by:

Power MOSFET, N-Channel, Logic Level, QFET®, 200 V, 9.0 A, 280 mΩ, DPAK, 2500-REEL

Part Details for FQD12N20LTM by onsemi

Overview of FQD12N20LTM by onsemi

Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.

Applications Education and Research Industrial Automation Electronic Manufacturing

Price & Stock for FQD12N20LTM

Part # Distributor Description Stock Price Buy
DISTI # 06R2503
Newark N Channel Mosfet, 200V, 9A, D-Pak, Channel Type:N Channel, Drain Source Voltage Vds:200V, Continuous Drain Current Id:9A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:2V Rohs Compliant: Yes |Onsemi FQD12N20LTM RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape 2500
  • 1 $0.9190
  • 10 $0.8110
  • 25 $0.7300
  • 50 $0.6500
  • 100 $0.5690
  • 250 $0.5240
  • 500 $0.4790
$0.4790 / $0.9190 Buy Now
DISTI # 31Y1521
Newark Mosfet Transistor, N Channel, 9 A, 200 V, 0.22 Ohm, 10 V, 2 V Rohs Compliant: Yes |Onsemi FQD12N20LTM RoHS: Compliant Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Cut Tape 1225
  • 1 $0.9550
  • 10 $0.8470
  • 25 $0.7660
  • 50 $0.6860
  • 100 $0.6050
  • 250 $0.5600
  • 500 $0.5150
$0.5150 / $0.9550 Buy Now
DISTI # 82C4012
Newark N Channel Mosfet, 200V, 9A, D-Pak, Full Reel, Channel Type:N Channel, Drain Source Voltage Vds:200V, Continuous Drain Current Id:9A, Transistor Mounting:Surface Mount, Rds(On) Test Voltage:10V, Gate Source Threshold Voltage Max:2V Rohs Compliant: Yes |Onsemi FQD12N20LTM RoHS: Compliant Min Qty: 2500 Package Multiple: 1 Date Code: 0 Container: Reel 0
  • 1 $0.3970
  • 3,000 $0.3870
  • 6,000 $0.3580
  • 12,000 $0.3340
  • 18,000 $0.3110
  • 30,000 $0.2980
$0.2980 / $0.3970 Buy Now
DISTI # FQD12N20LTM
Avnet Americas Trans MOSFET N-CH 200V 9A 3-Pin(2+Tab) DPAK T/R - Tape and Reel (Alt: FQD12N20LTM) RoHS: Compliant Min Qty: 2084 Package Multiple: 1 Lead time: 0 Weeks, 2 Days Container: Reel 3558 Partner Stock
RFQ
DISTI # 31Y1521
Avnet Americas Trans MOSFET N-CH 200V 9A 3-Pin(2+Tab) DPAK T/R - Product that comes on tape, but is not reeled (Alt: 31Y1521) RoHS: Compliant Min Qty: 1 Package Multiple: 1 Lead time: 19 Weeks, 4 Days Container: Ammo Pack 1225 Partner Stock
  • 1 $0.9550
  • 10 $0.8470
  • 25 $0.7660
  • 50 $0.6860
  • 100 $0.6050
$0.6050 / $0.9550 Buy Now
DISTI # FQD12N20LTM
Avnet Americas Trans MOSFET N-CH 200V 9A 3-Pin(2+Tab) DPAK T/R - Tape and Reel (Alt: FQD12N20LTM) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Container: Reel 0
  • 2,500 $0.3177
$0.3177 Buy Now
DISTI # FQD12N20LTM
Avnet Americas Trans MOSFET N-CH 200V 9A 3-Pin(2+Tab) DPAK T/R - Tape and Reel (Alt: FQD12N20LTM) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 16 Weeks, 0 Days Container: Reel 0
  • 2,500 $0.2959
$0.2959 Buy Now
Bristol Electronics   215
RFQ
DISTI # FQD12N20LTM
TME Transistor: N-MOSFET, unipolar, 200V, 5.7A, 55W, DPAK Min Qty: 1 2142
  • 1 $0.8380
  • 10 $0.7620
  • 25 $0.6150
  • 100 $0.4980
  • 250 $0.4550
  • 500 $0.4400
  • 1,000 $0.4100
  • 2,500 $0.3810
$0.3810 / $0.8380 Buy Now
DISTI # FQD12N20LTM
Richardson RFPD POWER MOSFET TRANSISTOR RoHS: Compliant Min Qty: 2500 0
  • 2,500 $0.2900
$0.2900 Buy Now
DISTI # FQD12N20LTM
Avnet Asia Trans MOSFET N-CH 200V 9A 3-Pin(2+Tab) DPAK T/R (Alt: FQD12N20LTM) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 16 Weeks, 0 Days 0
  • 2,500 $0.2880
  • 5,000 $0.2872
  • 7,500 $0.2864
  • 12,500 $0.2856
  • 25,000 $0.2832
$0.2832 / $0.2880 Buy Now
DISTI # FQD12N20LTM
Avnet Silica Trans MOSFET N-CH 200V 9A 3-Pin(2+Tab) DPAK T/R (Alt: FQD12N20LTM) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 17 Weeks, 0 Days Silica - 0
Buy Now
DISTI # FQD12N20LTM
EBV Elektronik Trans MOSFET N-CH 200V 9A 3-Pin(2+Tab) DPAK T/R (Alt: FQD12N20LTM) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 28 Weeks, 0 Days EBV - 0
Buy Now
DISTI # FQD12N20LTM
EBV Elektronik N-CH/LL/200V/9A/0.28OHM MOSFET (Alt: FQD12N20LTM) RoHS: Compliant Min Qty: 2500 Package Multiple: 2500 Lead time: 28 Weeks, 0 Days EBV - 0
Buy Now
Flip Electronics Stock, ship today 3558
RFQ
LCSC 200V 9A 280m10V4.5A 2V250uA 1 N-Channel TO-252(DPAK) MOSFETs ROHS 131
  • 1 $0.7604
  • 10 $0.6412
  • 30 $0.5816
  • 100 $0.5221
  • 500 $0.4343
  • 1,000 $0.4155
$0.4155 / $0.7604 Buy Now

Part Details for FQD12N20LTM

FQD12N20LTM CAD Models

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FQD12N20LTM Part Data Attributes

Parametric Data
FQD12N20LTM onsemi
Buy Now Datasheet
Compare Parts:
FQD12N20LTM onsemi Power MOSFET, N-Channel, Logic Level, QFET®, 200 V, 9.0 A, 280 mΩ, DPAK, 2500-REEL
Pbfree Code Yes
Part Life Cycle Code Active
Ihs Manufacturer ONSEMI
Package Description DPAK-3
Manufacturer Package Code 369AS
Reach Compliance Code not_compliant
ECCN Code EAR99
Samacsys Manufacturer onsemi
Avalanche Energy Rating (Eas) 210 mJ
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 200 V
Drain Current-Max (ID) 9 A
Drain-source On Resistance-Max 0.32 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JEDEC-95 Code TO-252
JESD-30 Code R-PSSO-G2
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 2
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Operating Temperature-Min -55 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 260
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 55 W
Pulsed Drain Current-Max (IDM) 36 A
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position SINGLE
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for FQD12N20LTM

This table gives cross-reference parts and alternative options found for FQD12N20LTM. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FQD12N20LTM, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
FQD12N20TF Power Field-Effect Transistor, 9A I(D), 200V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 Fairchild Semiconductor Corporation FQD12N20LTM vs FQD12N20TF
FQD12N20TM Power MOSFET, N-Channel, QFET®, 200 V, 9.0 A, 280 mΩ, DPAK, 2500-REEL onsemi FQD12N20LTM vs FQD12N20TM
FQD12N20LTM_NL Power Field-Effect Transistor, 9A I(D), 200V, 0.32ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, LEAD FREE, DPAK-3 Fairchild Semiconductor Corporation FQD12N20LTM vs FQD12N20LTM_NL
FQD12N20LTF Power Field-Effect Transistor, 9A I(D), 200V, 0.32ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 Fairchild Semiconductor Corporation FQD12N20LTM vs FQD12N20LTF
FQD10N20LTM Power MOSFET, N-Channel, Logic Level, QFET®, 200 V, 7.6 A, 380 mΩ, DPAK, 2500-REEL onsemi FQD12N20LTM vs FQD10N20LTM
FQD12N20LTM_F085 Power Field-Effect Transistor, 9A I(D), 200V, 0.32ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET onsemi FQD12N20LTM vs FQD12N20LTM_F085
FQD12N20LTM-F085 Power Field-Effect Transistor, 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET onsemi FQD12N20LTM vs FQD12N20LTM-F085
FQD12N20L Power Field-Effect Transistor, 9A I(D), 200V, 0.32ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 Fairchild Semiconductor Corporation FQD12N20LTM vs FQD12N20L
FQD10N20LTF Power Field-Effect Transistor, 7.6A I(D), 200V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 Fairchild Semiconductor Corporation FQD12N20LTM vs FQD10N20LTF
Part Number Description Manufacturer Compare
FQD12N20LTM_NL Power Field-Effect Transistor, 9A I(D), 200V, 0.32ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, LEAD FREE, DPAK-3 Fairchild Semiconductor Corporation FQD12N20LTM vs FQD12N20LTM_NL
FQD12N20L Power Field-Effect Transistor, 9A I(D), 200V, 0.32ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 Fairchild Semiconductor Corporation FQD12N20LTM vs FQD12N20L
FQD10N20LTF Power Field-Effect Transistor, 7.6A I(D), 200V, 0.38ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 Fairchild Semiconductor Corporation FQD12N20LTM vs FQD10N20LTF
FQD12N20TM Power MOSFET, N-Channel, QFET®, 200 V, 9.0 A, 280 mΩ, DPAK, 2500-REEL onsemi FQD12N20LTM vs FQD12N20TM
FQD12N20LTM-F085 Power Field-Effect Transistor, 200V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET onsemi FQD12N20LTM vs FQD12N20LTM-F085
FQD10N20LTM Power MOSFET, N-Channel, Logic Level, QFET®, 200 V, 7.6 A, 380 mΩ, DPAK, 2500-REEL onsemi FQD12N20LTM vs FQD10N20LTM
FQD12N20LTM_F085 Power Field-Effect Transistor, 9A I(D), 200V, 0.32ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET onsemi FQD12N20LTM vs FQD12N20LTM_F085
FQD12N20TF Power Field-Effect Transistor, 9A I(D), 200V, 0.28ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 Fairchild Semiconductor Corporation FQD12N20LTM vs FQD12N20TF
FQD12N20LTF Power Field-Effect Transistor, 9A I(D), 200V, 0.32ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252, DPAK-3 Fairchild Semiconductor Corporation FQD12N20LTM vs FQD12N20LTF

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