There are no models available for this part yet.
Overview of FQP9N08 by Fairchild Semiconductor Corporation
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 1 listing )
- Number of FFF Equivalents: ( 0 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 10 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Price & Stock for FQP9N08 by Fairchild Semiconductor Corporation
Part # | Manufacturer | Description | Stock | Price | Buy | ||
---|---|---|---|---|---|---|---|
Rochester Electronics | 9.3A, 80V, 0.21ohm, N-Channel Power MOSFET, TO-220AB ' RoHS: Compliant Status: Obsolete Min Qty: 1 | 3153 |
|
$0.2514 / $0.2958 | Buy Now |
CAD Models for FQP9N08 by Fairchild Semiconductor Corporation
Part Data Attributes for FQP9N08 by Fairchild Semiconductor Corporation
|
|
---|---|
Rohs Code
|
Yes
|
Part Life Cycle Code
|
Obsolete
|
Ihs Manufacturer
|
FAIRCHILD SEMICONDUCTOR CORP
|
Part Package Code
|
TO-220AB
|
Package Description
|
TO-220, 3 PIN
|
Pin Count
|
3
|
Reach Compliance Code
|
unknown
|
ECCN Code
|
EAR99
|
Avalanche Energy Rating (Eas)
|
55 mJ
|
Configuration
|
SINGLE WITH BUILT-IN DIODE
|
DS Breakdown Voltage-Min
|
80 V
|
Drain Current-Max (ID)
|
9.3 A
|
Drain-source On Resistance-Max
|
0.21 Ω
|
FET Technology
|
METAL-OXIDE SEMICONDUCTOR
|
JEDEC-95 Code
|
TO-220AB
|
JESD-30 Code
|
R-PSFM-T3
|
JESD-609 Code
|
e3
|
Number of Elements
|
1
|
Number of Terminals
|
3
|
Operating Mode
|
ENHANCEMENT MODE
|
Operating Temperature-Max
|
175 °C
|
Package Body Material
|
PLASTIC/EPOXY
|
Package Shape
|
RECTANGULAR
|
Package Style
|
FLANGE MOUNT
|
Polarity/Channel Type
|
N-CHANNEL
|
Power Dissipation-Max (Abs)
|
40 W
|
Pulsed Drain Current-Max (IDM)
|
37.2 A
|
Qualification Status
|
Not Qualified
|
Surface Mount
|
NO
|
Terminal Finish
|
MATTE TIN
|
Terminal Form
|
THROUGH-HOLE
|
Terminal Position
|
SINGLE
|
Transistor Application
|
SWITCHING
|
Transistor Element Material
|
SILICON
|
Alternate Parts for FQP9N08
This table gives cross-reference parts and alternative options found for FQP9N08. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FQP9N08, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
---|---|---|---|
NDB706AL | 75A, 60V, 0.015ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB | Texas Instruments | FQP9N08 vs NDB706AL |
IPB80N06S2LH5ATMA1 | Power Field-Effect Transistor, 80A I(D), 55V, 0.0062ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, GREEN, PLASTIC, TO-263, 3 PIN | Infineon Technologies AG | FQP9N08 vs IPB80N06S2LH5ATMA1 |
IXFH12N100F | Power Field-Effect Transistor, 12A I(D), 1000V, 1.05ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, PLASTIC PACKAGE-3 | IXYS Corporation | FQP9N08 vs IXFH12N100F |
F10F6N | Power Field-Effect Transistor, 10A I(D), 60V, 0.1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, FTO-220, 3 PIN | Shindengen Electronic Manufacturing Co Ltd | FQP9N08 vs F10F6N |
STP9NK65Z | N-channel 650 V - 1 Ohm - 6.4 A TO-220 Zener-protected SuperMESH(TM) Power MOSFET | STMicroelectronics | FQP9N08 vs STP9NK65Z |
STD5NE10T4 | 5A, 100V, 0.4ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA, DPAK-3 | STMicroelectronics | FQP9N08 vs STD5NE10T4 |
NDB705BEL | TRANSISTOR 70 A, 50 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263AB, FET General Purpose Power | National Semiconductor Corporation | FQP9N08 vs NDB705BEL |
IXFH30N40Q | Power Field-Effect Transistor, 30A I(D), 400V, 0.16ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247, TO-247, 3 PIN | Littelfuse Inc | FQP9N08 vs IXFH30N40Q |
SPB80N06S2-07 | Power Field-Effect Transistor, 80A I(D), 55V, 0.0066ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-263AB, PLASTIC, TO-263, 3 PIN | Infineon Technologies AG | FQP9N08 vs SPB80N06S2-07 |
SPP80N03S2L-05 | Power Field-Effect Transistor, 80A I(D), 30V, 0.0075ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, PLASTIC, TO-220, 3 PIN | Infineon Technologies AG | FQP9N08 vs SPP80N03S2L-05 |
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