Datasheets
FQT1N60CTF_WS by:

Small Signal Field-Effect Transistor, 0.2A I(D), 600V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT PACKAGE-4

Part Details for FQT1N60CTF_WS by Fairchild Semiconductor Corporation

Overview of FQT1N60CTF_WS by Fairchild Semiconductor Corporation

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Price & Stock for FQT1N60CTF_WS

Part # Distributor Description Stock Price Buy
Quest Components 200MA, 600V, N-CHANNEL, SI, SMALL SIGNAL, MOSFET 96
  • 1 $0.9000
  • 7 $0.7200
  • 29 $0.5400
$0.5400 / $0.9000 Buy Now

Part Details for FQT1N60CTF_WS

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FQT1N60CTF_WS Part Data Attributes

FQT1N60CTF_WS Fairchild Semiconductor Corporation
Buy Now Datasheet
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FQT1N60CTF_WS Fairchild Semiconductor Corporation Small Signal Field-Effect Transistor, 0.2A I(D), 600V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, ROHS COMPLIANT PACKAGE-4
Pbfree Code Yes
Rohs Code Yes
Part Life Cycle Code Transferred
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP
Part Package Code SOT-223
Package Description ROHS COMPLIANT PACKAGE-4
Pin Count 4
Manufacturer Package Code MOLDED PACKAGE, SOT-223, 4 LEAD
Reach Compliance Code not_compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Case Connection DRAIN
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V
Drain Current-Max (ID) 0.2 A
Drain-source On Resistance-Max 11.5 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 6 pF
JESD-30 Code R-PDSO-G4
JESD-609 Code e3
Moisture Sensitivity Level 1
Number of Elements 1
Number of Terminals 4
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style SMALL OUTLINE
Peak Reflow Temperature (Cel) 250
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 2.1 W
Qualification Status Not Qualified
Surface Mount YES
Terminal Finish MATTE TIN
Terminal Form GULL WING
Terminal Position DUAL
Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING
Transistor Element Material SILICON

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