Part Details for FQU2N50BTU_WS by onsemi
Overview of FQU2N50BTU_WS by onsemi
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (3 crosses)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (4 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
Tip: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
Price & Stock for FQU2N50BTU_WS
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
FQU2N50BTU-WS
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Avnet Americas | Trans MOSFET N-CH 500V 1.6A 3-Pin(3+Tab) IPAK Rail - Rail/Tube (Alt: FQU2N50BTU-WS) RoHS: Compliant Min Qty: 2778 Package Multiple: 1 Lead time: 0 Weeks, 2 Days Container: Tube | 5040 Partner Stock |
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$0.2232 / $0.2664 | Buy Now |
DISTI #
FQU2N50BTU-WS
|
Avnet Americas | Trans MOSFET N-CH 500V 1.6A 3-Pin(3+Tab) IPAK Rail - Rail/Tube (Alt: FQU2N50BTU-WS) RoHS: Compliant Min Qty: 2778 Package Multiple: 1 Lead time: 0 Weeks, 2 Days Container: Tube | 5040 Partner Stock |
|
$0.2232 / $0.2664 | Buy Now |
Part Details for FQU2N50BTU_WS
FQU2N50BTU_WS CAD Models
FQU2N50BTU_WS Part Data Attributes:
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FQU2N50BTU_WS
onsemi
Buy Now
Datasheet
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Compare Parts:
FQU2N50BTU_WS
onsemi
N-Channel QFET® MOSFET, TO-251 3L (IPAK), 30240-RAIL
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Rohs Code | Yes | |
Part Life Cycle Code | Obsolete | |
Ihs Manufacturer | ON SEMICONDUCTOR | |
Package Description | IN-LINE, R-PSIP-T3 | |
Manufacturer Package Code | TO251A03 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Samacsys Manufacturer | onsemi | |
Avalanche Energy Rating (Eas) | 120 mJ | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 500 V | |
Drain Current-Max (ID) | 1.6 A | |
Drain-source On Resistance-Max | 5.3 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-251AA | |
JESD-30 Code | R-PSIP-T3 | |
JESD-609 Code | e3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | IN-LINE | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 30 W | |
Pulsed Drain Current-Max (IDM) | 6.4 A | |
Surface Mount | NO | |
Terminal Finish | MATTE TIN | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for FQU2N50BTU_WS
This table gives cross-reference parts and alternative options found for FQU2N50BTU_WS. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FQU2N50BTU_WS, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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FQU2N50BTU-WS | Power MOSFET, N-Channel, QFET®, 500 V, 1.6 A, 5.3 Ω, IPAK, TO-251 3L (IPAK), 5040-TUBE | onsemi | FQU2N50BTU_WS vs FQU2N50BTU-WS |
FQU2N50B | Power Field-Effect Transistor, 1.6A I(D), 500V, 5.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, IPAK-3 | Fairchild Semiconductor Corporation | FQU2N50BTU_WS vs FQU2N50B |
FQU2N50BTU | Power Field-Effect Transistor, 1.6A I(D), 500V, 5.3ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-251, IPAK-3 | Fairchild Semiconductor Corporation | FQU2N50BTU_WS vs FQU2N50BTU |