Datasheets
FQU3N60CTU by:

Power Field-Effect Transistor, 2.4A I(D), 600V, 3.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, IPAK-3

Part Details for FQU3N60CTU by Fairchild Semiconductor Corporation

Overview of FQU3N60CTU by Fairchild Semiconductor Corporation

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Applications Energy and Power Systems Transportation and Logistics Renewable Energy Automotive

Price & Stock for FQU3N60CTU

Part # Distributor Description Stock Price Buy
Velocity Electronics Our Stock 4951
RFQ

Part Details for FQU3N60CTU

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FQU3N60CTU Part Data Attributes:

FQU3N60CTU Fairchild Semiconductor Corporation
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FQU3N60CTU Fairchild Semiconductor Corporation Power Field-Effect Transistor, 2.4A I(D), 600V, 3.4ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, IPAK-3
Rohs Code Yes
Part Life Cycle Code Obsolete
Ihs Manufacturer FAIRCHILD SEMICONDUCTOR CORP
Package Description IPAK-3
Pin Count 3
Reach Compliance Code compliant
ECCN Code EAR99
HTS Code 8541.29.00.95
Avalanche Energy Rating (Eas) 150 mJ
Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 600 V
Drain Current-Max (ID) 2.4 A
Drain-source On Resistance-Max 3.4 Ω
FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-30 Code R-PSFM-T3
JESD-609 Code e3
Number of Elements 1
Number of Terminals 3
Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C
Package Body Material PLASTIC/EPOXY
Package Shape RECTANGULAR
Package Style FLANGE MOUNT
Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 50 W
Pulsed Drain Current-Max (IDM) 9.6 A
Qualification Status Not Qualified
Surface Mount NO
Terminal Finish MATTE TIN
Terminal Form THROUGH-HOLE
Terminal Position SINGLE
Transistor Application SWITCHING
Transistor Element Material SILICON

Alternate Parts for FQU3N60CTU

This table gives cross-reference parts and alternative options found for FQU3N60CTU. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FQU3N60CTU, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.

Part Number Description Manufacturer Compare
FQD3N60CTM_WS N-Channel QFET® MOSFET 600V, 2.4A, 3.4Ω, TO-252 3L (DPAK), 30000-TAPE REEL onsemi FQU3N60CTU vs FQD3N60CTM_WS
STI11NM65N 12A, 650V, 0.38ohm, N-CHANNEL, Si, POWER, MOSFET, ROHS COMPLIANT, I2PAK-3 STMicroelectronics FQU3N60CTU vs STI11NM65N
STD3NK60ZT4 N-channel 600 V, 3.2 Ohm typ., 2.4 A SuperMESH PowerMOSFET in DPAK package STMicroelectronics FQU3N60CTU vs STD3NK60ZT4
NDD03N60Z Power Field-Effect Transistor onsemi FQU3N60CTU vs NDD03N60Z

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