Part Details for FS14UM-10 by Renesas Electronics Corporation
Overview of FS14UM-10 by Renesas Electronics Corporation
- Distributor Offerings: (0 listings)
- Number of FFF Equivalents: (0 replacements)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (10 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Part Details for FS14UM-10
FS14UM-10 CAD Models
FS14UM-10 Part Data Attributes
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FS14UM-10
Renesas Electronics Corporation
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Datasheet
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FS14UM-10
Renesas Electronics Corporation
14A, 500V, 0.64ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB, TO-220, 3 PIN
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Part Life Cycle Code | Active | |
Ihs Manufacturer | RENESAS ELECTRONICS CORP | |
Part Package Code | TO-220AB | |
Package Description | FLANGE MOUNT, R-PSFM-T3 | |
Pin Count | 3 | |
Reach Compliance Code | compliant | |
ECCN Code | EAR99 | |
Case Connection | DRAIN | |
Configuration | SINGLE WITH BUILT-IN DIODE | |
DS Breakdown Voltage-Min | 500 V | |
Drain Current-Max (ID) | 14 A | |
Drain-source On Resistance-Max | 0.64 Ω | |
FET Technology | METAL-OXIDE SEMICONDUCTOR | |
JEDEC-95 Code | TO-220AB | |
JESD-30 Code | R-PSFM-T3 | |
Number of Elements | 1 | |
Number of Terminals | 3 | |
Operating Mode | ENHANCEMENT MODE | |
Operating Temperature-Max | 150 °C | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Polarity/Channel Type | N-CHANNEL | |
Power Dissipation-Max (Abs) | 150 W | |
Pulsed Drain Current-Max (IDM) | 42 A | |
Qualification Status | Not Qualified | |
Surface Mount | NO | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE | |
Transistor Application | SWITCHING | |
Transistor Element Material | SILICON |
Alternate Parts for FS14UM-10
This table gives cross-reference parts and alternative options found for FS14UM-10. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FS14UM-10, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
Part Number | Description | Manufacturer | Compare |
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MTW7N80E | 7A, 800V, 1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247AE | Motorola Mobility LLC | FS14UM-10 vs MTW7N80E |
2SK896 | TRANSISTOR 12 A, 500 V, 0.6 ohm, N-CHANNEL, Si, POWER, MOSFET, FET General Purpose Power | Toshiba America Electronic Components | FS14UM-10 vs 2SK896 |
SSF17N60A | Power Field-Effect Transistor, 9A I(D), 600V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3PF, 3 PIN | Samsung Semiconductor | FS14UM-10 vs SSF17N60A |
STW9NA80 | 9.1A, 800V, 1ohm, N-CHANNEL, Si, POWER, MOSFET, TO-247, TO-247, 3 PIN | STMicroelectronics | FS14UM-10 vs STW9NA80 |
FS10SM-16A | Power Field-Effect Transistor, 10A I(D), 800V, 0.98ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN | Powerex Power Semiconductors | FS14UM-10 vs FS10SM-16A |
2SK2078 | TRANSISTOR 9 A, 800 V, 1.2 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3PN, TO-3PN, 3 PIN, FET General Purpose Power | Toshiba America Electronic Components | FS14UM-10 vs 2SK2078 |
BUZ305 | Power Field-Effect Transistor, 7.5A I(D), 800V, 1ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-218, TO-218AB, 3 PIN | Siemens | FS14UM-10 vs BUZ305 |
FS14UM-10 | Power Field-Effect Transistor, 14A I(D), 500V, 0.64ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220, 3 PIN | Powerex Power Semiconductors | FS14UM-10 vs FS14UM-10 |
SSH12N80 | Power Field-Effect Transistor, 12A I(D), 800V, 0.9ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN | Samsung Semiconductor | FS14UM-10 vs SSH12N80 |
SSH17N60A | Power Field-Effect Transistor, 17A I(D), 600V, 0.45ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-3P, 3 PIN | Fairchild Semiconductor Corporation | FS14UM-10 vs SSH17N60A |