Part Details for FZ1000R33HE3 by Infineon Technologies AG
Overview of FZ1000R33HE3 by Infineon Technologies AG
- Distributor Offerings: (2 listings)
- Number of FFF Equivalents: (1 cross)
- CAD Models: (Request Part)
- Number of Functional Equivalents: (3 options)
- Part Data Attributes: (Available)
- Reference Designs: (Not Available)
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Applications
Energy and Power Systems
Transportation and Logistics
Renewable Energy
Automotive
Price & Stock for FZ1000R33HE3
| Part # | Distributor | Description | Stock | Price | Buy | |
|---|---|---|---|---|---|---|
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DISTI #
84R7226
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Newark | Igbt Module, Continuous Collector Current:1Ka, Collector Emitter Saturation Voltage:3.1V, Power Dissipation:9.6Kw, Operating Temperature Max:150°C, Igbt Termination:Tab, Collector Emitter Voltage Max:3.3Kv, Transistor Mounting:Panel Rohs Compliant: Yes |Infineon FZ1000R33HE3 Min Qty: 1 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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Buy Now | |
|
DISTI #
641-FZ1000R33HE3
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Mouser Electronics | IGBT Modules IGBT 3300V 1000A RoHS: Compliant | 0 |
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Order Now |
Part Details for FZ1000R33HE3
FZ1000R33HE3 CAD Models
FZ1000R33HE3 Part Data Attributes:
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FZ1000R33HE3
Infineon Technologies AG
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Datasheet
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Compare Parts:
FZ1000R33HE3
Infineon Technologies AG
Insulated Gate Bipolar Transistor, 1000A I(C), 3300V V(BR)CES, N-Channel, MODULE-7
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| Pbfree Code | Yes | |
| Rohs Code | Yes | |
| Part Life Cycle Code | Not Recommended | |
| Ihs Manufacturer | INFINEON TECHNOLOGIES AG | |
| Part Package Code | MODULE | |
| Package Description | FLANGE MOUNT, R-XUFM-X7 | |
| Pin Count | 7 | |
| Reach Compliance Code | compliant | |
| ECCN Code | EAR99 | |
| Samacsys Manufacturer | Infineon | |
| Case Connection | ISOLATED | |
| Collector Current-Max (IC) | 1000 A | |
| Collector-Emitter Voltage-Max | 3300 V | |
| Configuration | PARALLEL, 2 ELEMENTS WITH BUILT-IN DIODE | |
| Gate-Emitter Voltage-Max | 20 V | |
| JESD-30 Code | R-XUFM-X7 | |
| Number of Elements | 2 | |
| Number of Terminals | 7 | |
| Operating Temperature-Max | 150 °C | |
| Package Body Material | UNSPECIFIED | |
| Package Shape | RECTANGULAR | |
| Package Style | FLANGE MOUNT | |
| Peak Reflow Temperature (Cel) | NOT SPECIFIED | |
| Polarity/Channel Type | N-CHANNEL | |
| Power Dissipation-Max (Abs) | 9600 W | |
| Qualification Status | Not Qualified | |
| Surface Mount | NO | |
| Terminal Form | UNSPECIFIED | |
| Terminal Position | UPPER | |
| Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED | |
| Transistor Application | POWER CONTROL | |
| Transistor Element Material | SILICON | |
| Turn-off Time-Nom (toff) | 3550 ns | |
| Turn-on Time-Nom (ton) | 1150 ns |
Alternate Parts for FZ1000R33HE3
This table gives cross-reference parts and alternative options found for FZ1000R33HE3. The Form Fit Function (FFF) tab will give you the options that are more likely to serve as direct pin-to-pin alternates or drop-in parts. The Functional Equivalents tab will give you options that are likely to match the same function of FZ1000R33HE3, but it may not fit your design. Always verify details of parts you are evaluating, as these parts are offered as suggestions for what you are looking for and are not guaranteed.
| Part Number | Description | Manufacturer | Compare |
|---|---|---|---|
| FZ1000R33HE3BOSA1 | Insulated Gate Bipolar Transistor, 1000A I(C), 3300V V(BR)CES, N-Channel, MODULE-7 | Infineon Technologies AG | FZ1000R33HE3 vs FZ1000R33HE3BOSA1 |