There are no models available for this part yet.
Overview of GB2X50MPS12-227 by GeneSic Semiconductor Inc
Note: Data for a part may vary between manufacturers. You can filter for manufacturers on the top of the page next to the part image and part number.
- Distributor Offerings: ( 4 listings )
- Number of FFF Equivalents: ( 0 replacements )
- CAD Models: ( Request Part )
- Number of Functional Equivalents: ( 0 options )
- Part Data Attributes ( Available )
- Reference Designs: ( Not Available )
Price & Stock for GB2X50MPS12-227 by GeneSic Semiconductor Inc
| Part # | Manufacturer | Description | Stock | Price | Buy | ||
|---|---|---|---|---|---|---|---|
|
DISTI #
94AC2955
|
Newark | Silicon Carbide Schottky Diode, Sot-227, Product Range:Mps Series, Diode Configuration:Dual Isolated, Repetitive Peak Reverse Voltage:1.2Kv, Average Forward Current:186A, Total Capacitive Charge:398Nc, Diode Case Style:Sot-227 Rohs Compliant: Yes |Genesic Semiconductor GB2X50MPS12-227 RoHS: Compliant Min Qty: 150 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
|
$71.7100 | Buy Now | |
|
DISTI #
1242-1339-ND
|
DigiKey | DIODE MOD SIC 1200V 93A SOT227 Min Qty: 1 Lead time: 14 Weeks Container: Tube |
248 In Stock |
|
$79.8500 | Buy Now | |
|
DISTI #
905-GB2X50MPS12-227
|
Mouser Electronics | SiC Schottky Diodes 1200V 100A SOT-227 SiC Schottky MPS RoHS: Compliant | 2981 |
|
$68.9500 / $79.8500 | Buy Now | |
| NAC | Silicon Carbide (SiC) Merged PiN Schottky (MPS)Diode 1200V 100A SOT-227 RoHS: Compliant Min Qty: 10 Package Multiple: 10 Container: Tube | 0 |
|
RFQ |
CAD Models for GB2X50MPS12-227 by GeneSic Semiconductor Inc
Part Data Attributes for GB2X50MPS12-227 by GeneSic Semiconductor Inc
|
|
|
|---|---|
|
Pbfree Code
|
Yes
|
|
Rohs Code
|
Yes
|
|
Part Life Cycle Code
|
Not Recommended
|
|
Ihs Manufacturer
|
GENESIC SEMICONDUCTOR INC
|
|
Part Package Code
|
SOT-227
|
|
Reach Compliance Code
|
unknown
|
|
ECCN Code
|
EAR99
|
|
HTS Code
|
8541.10.00.80
|
|
Additional Feature
|
PD-CASE
|
|
Application
|
EFFICIENCY
|
|
Case Connection
|
ISOLATED
|
|
Configuration
|
SEPARATE, 2 ELEMENTS
|
|
Diode Element Material
|
SILICON CARBIDE
|
|
Diode Type
|
RECTIFIER DIODE
|
|
Forward Voltage-Max (VF)
|
1.8 V
|
|
JESD-30 Code
|
R-PUFM-X4
|
|
Non-rep Pk Forward Current-Max
|
500 A
|
|
Number of Elements
|
2
|
|
Number of Phases
|
1
|
|
Number of Terminals
|
4
|
|
Operating Temperature-Max
|
175 °C
|
|
Operating Temperature-Min
|
-55 °C
|
|
Output Current-Max
|
78 A
|
|
Package Body Material
|
PLASTIC/EPOXY
|
|
Package Shape
|
RECTANGULAR
|
|
Package Style
|
FLANGE MOUNT
|
|
Power Dissipation-Max
|
600 W
|
|
Rep Pk Reverse Voltage-Max
|
1200 V
|
|
Reverse Current-Max
|
20 µA
|
|
Reverse Test Voltage
|
1200 V
|
|
Surface Mount
|
NO
|
|
Technology
|
SCHOTTKY
|
|
Terminal Form
|
UNSPECIFIED
|
|
Terminal Position
|
UPPER
|
Want to compare parts?
-
GeneSic Semiconductor IncSilicon Carbide (SiC) Merged PiN Schottky (MPS) Diode 1200V 100A SOT-227; Mounting Style: Through Hole; Package / Case: SOT-227; Packaging: Tube; Factory Pack Quantity: 10; Configuration: Dual; Repetitive Reverse Voltagen(VRRM): 1200 V; Forward Currentn(IF): 100 A; Forward Voltagen(VF): 1.5 V @ 100 A; Reverse Currentn(IR): 8 uA @ 1200 V; Total Capacitive Charge (QC): 398 nC; Capacitancen(C): 6526 pF @ 1 V; Reverse Recovery Timen(trr): < 10 ns; Forward Surge Currentn(IFSM): 600 A; Power Dissipationn(PD): 454 W; Switching Speedn(ts): < 10 ns; Minimum Operating Temperature: - 55 °C; Maximum Operating Temperature: 175 °CVS
-