Part Details for GB50MPS17-247 by GeneSic Semiconductor Inc
Overview of GB50MPS17-247 by GeneSic Semiconductor Inc
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Price & Stock for GB50MPS17-247
Part # | Distributor | Description | Stock | Price | Buy | |
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DISTI #
94AC2957
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Newark | Silicon Carbide Schottky Diode, To-247, Product Range:Mps Series, Diode Configuration:Single, Repetitive Peak Reverse Voltage:1.7Kv, Average Forward Current:216A, Total Capacitive Charge:206Nc, Diode Case Style:To-247 Rohs Compliant: Yes |Genesic Semiconductor GB50MPS17-247 Min Qty: 600 Package Multiple: 1 Date Code: 0 Container: Bulk | 0 |
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$39.6800 | Buy Now |
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NAC | Silicon Carbide (SiC) Merged PiN Schottky (MPS)Diode 1700V 50A TO-247-2 RoHS: Compliant Min Qty: 30 Package Multiple: 30 Container: Tube | 0 |
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$76.1000 / $87.8000 | Buy Now |
DISTI #
2989876
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element14 Asia-Pacific | SILICON CARBIDE SCHOTTKY DIODE, TO-247 RoHS: Compliant Min Qty: 1 Container: Each | 0 |
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$79.6903 / $106.2537 | Buy Now |
Part Details for GB50MPS17-247
GB50MPS17-247 CAD Models
GB50MPS17-247 Part Data Attributes
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GB50MPS17-247
GeneSic Semiconductor Inc
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Datasheet
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GB50MPS17-247
GeneSic Semiconductor Inc
Silicon Carbide (SiC) Merged PiN Schottky (MPS) Diode 1700V 50A TO-247-2; Mounting Style: Through Hole; Package / Case: TO-247-2; Packaging: Tube; Factory Pack Quantity: 30; Configuration: Single; Repetitive Reverse Voltagen(VRRM): 1700 V; Forward Currentn(IF): 50 A; Forward Voltagen(VF): 1.5 V @ 50 A; Reverse Currentn(IR): 10 uA @ 1700 V; Total Capacitive Charge (QC): 206 nC; Capacitancen(C): 3193 pF @ 1 V; Reverse Recovery Timen(trr): < 10 ns; Forward Surge Currentn(IFSM): 230 A; Power Dissipationn(PD): 1625 W; Switching Speedn(ts): < 10 ns; Minimum Operating Temperature: - 55 °C; Maximum Operating Temperature: 175 °C
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Pbfree Code | Yes | |
Rohs Code | Yes | |
Part Life Cycle Code | Active | |
Ihs Manufacturer | GENESIC SEMICONDUCTOR INC | |
Part Package Code | TO-247-2 | |
Reach Compliance Code | unknown | |
Additional Feature | HIGH RELIABILITY, PD-CASE | |
Application | EFFICIENCY | |
Case Connection | CATHODE | |
Configuration | SINGLE | |
Diode Element Material | SILICON CARBIDE | |
Diode Type | RECTIFIER DIODE | |
Forward Voltage-Max (VF) | 1.8 V | |
JEDEC-95 Code | TO-247 | |
JESD-30 Code | R-PSFM-T2 | |
Non-rep Pk Forward Current-Max | 540 A | |
Number of Elements | 1 | |
Number of Phases | 1 | |
Number of Terminals | 2 | |
Operating Temperature-Max | 175 °C | |
Operating Temperature-Min | -55 °C | |
Output Current-Max | 99 A | |
Package Body Material | PLASTIC/EPOXY | |
Package Shape | RECTANGULAR | |
Package Style | FLANGE MOUNT | |
Power Dissipation-Max | 688 W | |
Rep Pk Reverse Voltage-Max | 1700 V | |
Reverse Current-Max | 20 µA | |
Reverse Test Voltage | 1700 V | |
Surface Mount | NO | |
Technology | SCHOTTKY | |
Terminal Form | THROUGH-HOLE | |
Terminal Position | SINGLE |